TRANSISTOR MARKING 1Y Search Results

high voltage npn transistor SOT-89 darlington

Contextual Info: Die no. D-69 NPN Darlington transistor These are epitaxial planar NPN silicon Darlington transistors. Features • available in the following packages: Dimensions Units : mm SST3 I . » ± 0 .2 1y T i U. «9 X I 0 .9 5 0 . » — SST3 (SST, SOT-23) • •

em 234 stepper

Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
Contextual Info: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

2SC5586 equivalent

Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements

D 823 transistor

Abstract: BF56 BF821S
Contextual Info: TELEFUNKEN ELECTRONIC 17E » • a'lSDQ^b 0 0 0 ^ 2 3 IALGG BF 821 S BF 823 S TTllUlFüiKIKIKI electronic C rM tM "ftchrtotoQtes Silicon PNP Epitaxial Planar Transistors A p p lica tio n s: For telephone sets, telecommunication circuits, hybrid circuits, video-B-class power

BCW60BLT1

Abstract: BCW60CLT1 BCW60DLT1 marking 1R PNP marking code 1Y
Contextual Info: BCW60LT1 NPN Silicon Epitaxial Planar Transistors for general purpose switching and amplification. These transistors are subdivided into three groups B, C and D, according to their current gain. As complementary types the PNP transistors BCW61LT1 are recommended.

3904 npn

Abstract: KST3903 741i KST3904 npn transistor dc 558 sot23 marking JR
Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: Philips Semiconductors Product specification PNP high-voltage transistors BF821 ; BF823 FEATURES PINNING • Low current max. 50 mA PIN • High voltage (max. 300 V). 1 base 2 emitter 3 collector APPLICATIONS DESCRIPTION • Telephony and professional communication equipment.

74AUP1G19GM

Abstract: 74AUP1G19GW JESD22-A114E
Contextual Info: 74AUP1G19 Low-power 1-of-2 decoder/demultiplexer Rev. 01 — 13 August 2008 Product data sheet 1. General description The 74AUP1G19 provides a 1-of-2 decoder/demultiplexer with a common output enable. It buffers the data on input pin A and passes it either to output pin 1Y true or 2Y

Contextual Info: Philips Semiconductors Product specification PNP high-voltage transistors BF821 ; BF823 FEATURES PINNING • Low current max. 50 mA PIN • High voltage (max. 300 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Telephony and professional communication equipment.

MOSFET TRANSISTOR SMD 033

Abstract: 440 transistor
Contextual Info: PMFPB8040XP 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor FET using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)

Transistor 3904

Abstract: 3904 npn 3904 SOT-23 sot 23 mark kst
Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit J Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

FAH diode

Abstract: diode marking FAH transistor marking 15c
Contextual Info: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTOR / _2SJ463A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING Package Drawings unit: mm DESCRIPTION The 2SJ463A is a switching device which can be driven directly by a 2.5 V power source.

HVR-1X 7 diode

Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
Contextual Info: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

3904 npn

Abstract: 3904 KST3903 KST3904 KST3904 sot-23 marking code SS SOT23 transistor TRANSISTOR MARKING CODE ss TRANSISTOR 3904 ic 5ma transistor 3904 SOT-23
Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Rating Unit -60 -40 -6 -200 350 150 V V V mA mW VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage

transistor marking 1y

Abstract: HB573
Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA-25t: Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

2SD2457

Contextual Info: Transistor 2SD2457 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● High collector to emitter voltage VCEO. Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment

PBSS4480x

Abstract: PBSS5480X
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4480X 80 V, 4 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2004 Aug 5 2004 Oct 25 NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X

Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D109 PBSS4480X 80 V, 4 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2004 Aug 5 2004 Oct 25 NXP Semiconductors Product data sheet 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X FEATURES

sc6211

Abstract: PBSS4480x PBSS5480X
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D109 PBSS4480X 80 V, 4 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2004 Aug 5 2004 Oct 25 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor

3904 NPN

Abstract: KST3904
Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic C ollecto r-B a se Voltage C o llecto r-E m itte r V oltage Em itter-Base V oltage Symbol Rating VcBO VcEO -6 0 -4 0 -6 -2 0 0

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

BF820

Abstract: BF821 BF822 BF823
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF821; BF823 PNP high-voltage transistors Product specification Supersedes data of 1999 Apr 15 2004 Jan 16 Philips Semiconductors Product specification PNP high-voltage transistors BF821; BF823 FEATURES PINNING • Low current max. 50 mA

3904 npn

Abstract: KST3903 KST3904 FAIRCHILD SOT-23 MARK 1a
Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation