TRANSISTOR MARKING 1F Search Results

SMD Transistor 1f

Abstract: MARKING 1F transistor marking 1f CMBT5550
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

transistor marking 1f

Abstract: CMBT5550
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

smd transistor marking BL

Abstract: smd transistor marking 1E smd transistor .1G CSC2712 CSC2712BL CSC2712GR CSC2712Y ts 4141 TRANSISTOR smd transistor 1f sot-23 marking 1F SOT-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE

equivalent transistor smd 3 em 7

Abstract: CMBT5550 ts 4141 TRANSISTOR
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

ts 4141 TRANSISTOR smd

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CSC2712 SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE

smd transistor marking BL

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CSC2712Y=1E CSC2712GR G =1F

MARKING 1F

Abstract: CSC2712 CSC2712BL CSC2712GR CSC2712Y MARKING 1G TRANSISTOR
Contextual Info: SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking C SC 2712Y=1E C S C 2712G R G =1F CSC 2712BL(L)=1G _3.0_ 2.8 0.14 0.09 0.48 0.38 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2.6 2.4 _l.02_

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking

Contextual Info: CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking PACKAGE O UTLIN E DETAILS ALL DIM EN SION S IN m m CSC2712Y*1E CSC2712GR G =*1F CSC2712BL(L)=1 G 3.0_ 2.8 “ Û.09 o3a Pin configuration 1 » BASE 2 = EM ITTER 3 = COLLECTOR 0.14 o.4a L

Contextual Info: SMBTA06UPN NPN / PNP Silicon AF Transistor Array • High breakdown voltage • Low collector-emitter saturation voltage 4 3 5 • Two galvanic internal isolated NPN/PNP 2 6 1 Transistor in one package Tape loading orientation Top View 6 5 4 Marking on SC74 package

bc847at

Contextual Info: BC847AT/BT/CT SOT-523 Transistor NPN SOT-523 1. BASE 2. EMITTER 3. COLLECTOR Features — — Ideally suited for automatic insertion For Switching and AF Amplifier Applications MARKING: BC847AT=1E; BC847BT=1F; BC847CT=1G Dimensions in inches and (millimeters)

transistor bc 499

Abstract: 1CS K2 marking 1cs transistor Bc 580
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array 1For AF input stages and driver applications •High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package A R n 3 tr ETH "j>- Type Marking Ordering Code

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transisto r Marking CMBT5550 = 1F Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

h11E

Contextual Info: BC847BT NPN Silicon AF Transistor 3 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage 2 • Low noise between 30 Hz and 15 kHz 1 • Complementary type: BC857BT Type Marking BC847BT 1Fs Pin Configuration

h11E

Contextual Info: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2907A / MMBT2907A PNP • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P

bc817

Contextual Info: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration

egs SOT23

Abstract: BC817K-40 thermal resistance
Contextual Info: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration

6CS transistor

Abstract: transistor 6cs
Contextual Info: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration

transistor 6cs

Abstract: 6CS transistor 6as sot23 marking 6CS BC808 BC817 6bs transistor BC817-25 BC817-25W BC817K-16
Contextual Info: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration

Contextual Info: BC847BL3, BC848BL3 NPN Silicon AF Transistor • For AF input stage and driver applications • High current gain 3 • Low collector-emitter saturation voltage 1 2 • Complementary types: BC857BL3, BC858BL3 PNP Type Marking Pin Configuration Package BC847BL3

Contextual Info: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT2222A/ MMBT2222A NPN 2 1 Type Marking SMBT2907A/MMBT2907A s2F 1=B Pin Configuration

5Cs transistor

Abstract: 5BS transistor marking 5bs 5as package package marking 5as transistor 5bs
Contextual Info: BC807./ BC808. PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817./W, BC818./W NPN Type Marking Pin Configuration BC807-16

Contextual Info: BF517 NPN Silicon RF Transistor • For amplifier and oscillator applications in TV-tuners 2 3 • Pb-free RoHS compliant package 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BF517 Marking LRs Pin Configuration 1=B

Contextual Info: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT2222A/ MMBT2222A NPN 2 1 Type Marking SMBT2907A/MMBT2907A s2F 1=B Pin Configuration