TRANSISTOR MARKING 1F Search Results

transistor marking 1f

Abstract: CMBT5550
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

smd transistor marking BL

Abstract: smd transistor marking 1E smd transistor .1G CSC2712 CSC2712BL CSC2712GR CSC2712Y ts 4141 TRANSISTOR smd transistor 1f sot-23 marking 1F SOT-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE

equivalent transistor smd 3 em 7

Abstract: CMBT5550 ts 4141 TRANSISTOR
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

ts 4141 TRANSISTOR smd

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CSC2712 SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE

smd transistor marking BL

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CSC2712Y=1E CSC2712GR G =1F

MARKING 1F

Abstract: CSC2712 CSC2712BL CSC2712GR CSC2712Y MARKING 1G TRANSISTOR
Contextual Info: SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking C SC 2712Y=1E C S C 2712G R G =1F CSC 2712BL(L)=1G _3.0_ 2.8 0.14 0.09 0.48 0.38 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2.6 2.4 _l.02_

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transisto r Marking CMBT5550 = 1F Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

transistor Bc 580

Abstract: TRANSISTOR BC 450 pnp transistor BC 660
Contextual Info: BC 847BL3, BC 848BL3 NPN Silicon AF Transistor Preliminary data
For AF input stage and driver applications 3
High current gain
Low collector-emitter saturation voltage 1
complementary types: BC 857BL3, 2 BC 858BL3 PNP Type Marking Pin Configuration

BCR151

Abstract: BCR151F BCR151L3 BCR151T SC75
Contextual Info: BCR151. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 100kΩ , R2 = 100kΩ BCR151F/L3 BCR151T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration Package BCR151F*

BCP51M

Abstract: BCP52M BCP53M BCP54M BCP56M SCT595 SCT-595
Contextual Info: BCP51M.BCP53M PNP Silicon AF Transistor 4
For AF driver and output stages 5
High collector current
Low collector-emitter saturation voltage 3
Complementary types: BCP54M.BCP56M NPN 2 1 VPW05980 Type Marking Pin Configuration Package BCP51M AAs

bf998

Abstract: bf998 mosfet tetrode application note VPS05178
Contextual Info: BF998 Silicon N-Channel MOSFET Tetrode 3
Short-channel transistor with high S/C quality factor 4
For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BCR164

Abstract: BCR164F BCR164L3 BCR164T SC75 bcr1
Contextual Info: BCR164. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 10kΩ BCR164F/L3 BCR164T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration Package BCR164F*

bdp 11

Abstract: BCP52-16 BDP951 BDP953 BDP954 E6327 VPS05163 BM sot223 marking code
Contextual Info: BDP951, BDP953 NPN Silicon AF Power Transistor • For AF driver and output stages 4 • High collector current • High current gain • Low collector-emitter saturation voltage 3 • Complementary type: BDP954 PNP 2 1 Pin Configuration VPS05163 Type Marking

AN077

Contextual Info: PZTA14 NPN Silicon Darlington Transistor • For general AF applications 4 • High collector current 3 2 • High current gain 1 • Pb-free RoHS compliant package • Qualified according AEC Q101 Type Marking PZTA14 PZTA14 1=B Pin Configuration 2=C 3=E

TRANSISTOR S1d

Abstract: BCW66 SMBTA92
Contextual Info: SMBTA42/MMBTA42 NPN Silicon Transistor for High Voltages 3
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: SMBTA92 PNP 2 1 Type Marking SMBTA42/MMBTA42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings

BCP72M

Abstract: SCT595
Contextual Info: BCP72M PNP Silicon AF Power Transistor 4 • Drain switch for RF power amplifier stages • For AF driver and output stages 5 • High collector current • Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking BCP72M PAs Pin Configuration Package

Contextual Info: BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon COLLECTOR 3 * “G” Lead Pb -Free *Moisture Sensitivity Level: 1 *ESD Rating - Human Body Model:>4000V -Machine Model:>400V 3 MARKING DIAGRAM 3 XX = Device Code (See

VPS05163

Abstract: BCP68 BCP69 BCP69-10 BCP69-16 BCP69-25
Contextual Info: BCP69 PNP Silicon AF Transistor
For general AF applications 4
High collector current
High current gain
Low collector-emitter saturation voltage 3
Complementary type: BCP68 NPN 2 1 Pin Configuration VPS05163 Type Marking Package BCP69 BCP 69 1=B

BCR199

Abstract: BCR199F BCR199L3 BCR199T SC75
Contextual Info: BCR199. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47kΩ BCR199F/L3 BCR199T C 3 R1 1 B 2 E EHA07180 Type Marking Pin Configuration Package BCR199F* UBs 1=B 2=E 3=C

BCR149

Abstract: BCR149F BCR149L3 BCR149T SC75
Contextual Info: BCR149. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47kΩ BCR149F/L3 BCR149T C 3 R1 1 B 2 E EHA07264 Type Marking Pin Configuration Package BCR149F* UAs 1=B 2=E 3=C

BCP52-16

Abstract: BDP953 BDP954
Contextual Info: BDP953 NPN Silicon AF Power Transistor • For AF driver and output stages • High collector current 4 3 2 • High current gain 1 • Low collector-emitter saturation voltage • Complementary type: BDP954 PNP Type BDP953 Marking BDP953 1=B Pin Configuration

BCR114

Abstract: BCR114F BCR114L3 BCR114T SC75
Contextual Info: BCR114. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =4.7kΩ, R2 =10kΩ BCR114/F BCR114L3/T C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration BCR114 U4s 1=B 2=E

Contextual Info: BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon *Moisture Sensitivity Level: 1 *ESD Rating - Human Body Model:>4000V -Machine Model:>400V COLLECTOR 3 3 MARKING DIAGRAM 3 XX = Device Code See Table Below 1 1 BASE 2