TRANSISTOR MARKING 1123 Search Results

Contextual Info: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-rioise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 81 FAs

2SC5586 equivalent

Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements

Contextual Info: MMBT3904E NPN General Purpose Transistor 3 1 The MMBT3904E device is a spin-off of our popular SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-1123 surface mount package.

Contextual Info: NSBA114EF3T5G Series Preferred Devices Digital Transistors BRT PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor

Contextual Info: NSBA114EF3T5G Series Preferred Devices Digital Transistors BRT PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor

Contextual Info: MMBT3906E PNP General Purpose Transistor 3 1 The MMBT3906E device is a spin-off of our popular SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-1123 surface mount package.

Contextual Info: NSBC114EF3T5G Series Preferred Devices Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor

NSBC114YF3T5G

Contextual Info: NSBC114EF3T5G Series Preferred Devices Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor

SOT-1123

Abstract: NSBC114EF3T5G NSBC114YF3T5G NSBC123TF3T5G NSBC124EF3T5G NSBC143EF3T5G NSBC143ZF3T5G NSBC144EF3T5G transistor marking 1123
Contextual Info: NSBC114EF3T5G Series Preferred Devices Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor

marking 513 SOD-323

Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

Contextual Info: NSBA123TF3 Digital Transistors BRT R1 = 2.2 kW, R2 = 8 kW PNP Transistors with Monolithic Bias Resistor Network http://onsemi.com This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor

Contextual Info: NSBA115TF3 Digital Transistors BRT R1 = 100 kW, R2 = 8 kW PNP Transistors with Monolithic Bias Resistor Network http://onsemi.com This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor

alternator rectifier diode 50a

Abstract: EL 14v 4c STA509A equivalent sta509a smd diode marking A05 CTB-34M HALL SENSOR A 22L GENERAL SEMICONDUCTOR MARKING mJ SMA ED TRANSISTOR SMD MARKING CODE 12w Zener diode smd marking code 22h
Contextual Info: Bulletin No C01EA0 Jun., 1999 DEVICES for AUTOMOTIVE CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

Contextual Info: MUN2134, MMUN2134L, MUN5134, DTA124XE, DTA124XM3 Digital Transistors BRT R1 = 22 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor

Contextual Info: MUN5135, DTA123JE, DTA123JM3, NSBA123JF3 Digital Transistors BRT R1 = 2.2 kW, R2 = 47 kW PNP Transistors with Monolithic Bias Resistor Network http://onsemi.com This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor

2224B

Abstract: 016W LT1123 LT1123CST LT1123CZ MJE1123 RUR67B1CB TA03 2N2907 PNP Transistor to 92 TRANSISTOR pnp 0.15W
Contextual Info: LT1123 Low Dropout Regulator Driver U FEATURES • DESCRIPTIO The LT 1123 is a 3-pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an inexpensive low dropout regulator. The LT1123 consists of a trimmed bandgap reference, error amplifier,

Contextual Info: LT1123 Low Dropout Regulator Driver FEATURES DESCRIPTIO U The LT 1123 is a 3-pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an inexpensive low dropout regulator. The LT1123 consists of a trimmed bandgap reference, error amplifier,

2N2907 PNP Transistor to 92

Abstract: pnp marking 3W 2224B 1N4148 75V 150mA Diodes 2N2907 PNP Transistor 2n2907 TRANSISTOR PNP LT1123 LT1123CST LT1123CZ MJE1123
Contextual Info: LT1123 Low Dropout Regulator Driver U FEATURES DESCRIPTIO The LT 1123 is a 3-pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an inexpensive low dropout regulator. The LT1123 consists of a trimmed bandgap reference, error amplifier,

MUN5130

Contextual Info: MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3 Digital Transistors BRT R1 = 1 kW, R2 = 1 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single

marking 6P

Contextual Info: MUN2137, MUN5137, DTA144WE, DTA144WM3, NSBA144WF3 Digital Transistors BRT R1 = 47 kW, R2 = 22 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor

Contextual Info: AIC1639 1-Cell, 3-Pin, Step-Up DC/DC Controller FEATURES DESCRIPTION A Guaranteed Start-Up from less than 0.9 V. High Efficiency. Low Quiescent Current. Less Number of External Components needed. Low Ripple and Low Noise. Fixed Output Voltage: 2.7, 3.0V, 3.1V, 3.3V, and

PMA-545

Abstract: PL-299 ZVA-24 monolithic circuit layout marking A Monolithic Amplifier marking 5 Monolithic Amplifier MARKING 545 DBM N5242a TB-502 marking package 545 amplifier
Contextual Info: Low Noise, High IP3 Monolithic Amplifier 0.1-6 GHz Product Features • Single Positive Supply Voltage, 3V • Low Noise Figure, 0.8 dB typ. at 1GHz • High IP3, 36 dBm typ. 1GHz • Gain, 20dB typ. at 1 GHz • Output Power, up to +20dBm typ. • Micro-miniature size

Contextual Info: Tem ic Siliconix_ _ N-Channel Enhancement-Mode MOS Transistor Product Summary V bk d ss M in (V) r DS(on) M ax (Q ) Vg s (Ui) (V) Id (A) 200 11 0.8 to 3.0 0.085 Features • • • • • Low On-Resistance: 9.5 Q