TRANSISTOR MARKING 04 Search Results

BC648B

Contextual Info: Transistors BC847B NPN General Purpose Transistor I BC847B •Feature« •E x te rn a l dimensions Units : mm 1 > BVceo<45V (lc=1m A ) 2 ) Complements the BC857B. BC847B •P a c k a g e , marking, and packaging specifications Type BC847B Package Marking

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHRT5993GP SURFACE MOUNT NPN Silicon RF Transistor VOLTAGE 11 Volts CURRENT 50 mAmpere APPLICATION * UHF Converter * Local Oscillator SOT-23 .019 0.50 MARKING .066 (1.70) * NPN RF Transistor .110 (2.80) .082 (2.10) .119 (3.04)

CHDTA144EKTGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA144EKTGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64)

CHDTA114EKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA114EKGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64)

CHBTA13GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHBTA13GP SURFACE MOUNT NPN Darlington Transistor VOLTAGE 30 Volts CURRENT 1.2 Ampere APPLICATION * High current gain applications. FEATURE 3 (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64) .086 (2.20) .007 (0.177) * NI .045 (1.15)

ic 556

Contextual Info: BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P-N -P transistor Marking PACKAGE OUTLINE DETAILS A LL DIM ENSIO NS IN mm BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH 3.0 2.8 f I i 3 I Pin configuration 1 = BASE 2 = EMITTER

CNY70

Contextual Info: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area The CNY70 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. E D Features • •

2SD2142

Contextual Info: 2SD2142 0.3A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE Darlington connection for a high hFE. High input impedance. A L 3 3 C B Top View MARKING

transistor EKs

Abstract: transistor marking code 7C marking BSs sot23 transistor EKs 80 BCX41 marking AMs 4 pin bss 100 transistor marking BSs sot23 siemens
Contextual Info: SIEMENS NPN Silicon AF and Switching Transistor BCX 41 BSS 64 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BCX 42, BSS 63 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)

bss 108

Abstract: ss135 to-92 SS-135 BSS 97 Q67000-S237 SS135 E6325
Contextual Info: SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● BSS 135 VDS 600 V ID 0.080 A RDS on 60 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code 1 Tape and Reel Information Pin Configuration Marking

Q62702-S655

Abstract: Q67000-S283 E6327
Contextual Info: SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● BSP 135 VDS 600 V ID 0.100 A RDS on 60 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Reel Information Pin Configuration Marking Package

marking code g1s

Abstract: Q62702-F1129 D 998 TRANSISTOR
Contextual Info: Silicon N Channel MOSFET Tetrode BF 998 Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO

04N03LA

Abstract: 04n03l smd marking D50 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11 smd diode marking c3
Contextual Info: Type OptiMOS 2 Power-Transistor IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level

E7941

Abstract: c 129 transistor Q67000-S073 E6327 Q67000-S314 BSP 17 D 21001A
Contextual Info: SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● BSP 129 VDS 240 V ID 0.2 A RDS on 20 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Reel Information Pin Configuration Marking Package

Q62702-S655

Abstract: E6327 Q67000-S283 TRANSISTOR BSP 147
Contextual Info: SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● BSP 135 VDS 600 V ID 0.100 A RDS on 60 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Reel Information Pin Configuration Marking Package

Contextual Info: 2SB1181F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1181 where ★ is hFE code and ta is lot number • high breakdown voltage and large current capability: VCE0 = -80 V, IC = -1 A • good hFE linearity

hl 4929

Abstract: 34T sot-363 ATIC 164 D2 48 pin
Contextual Info: That HEWLETT WL'kM PACKARD 1.5 GHz Low N oise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, A ctive Bias Circuit Surface Mount Package SOT-363 SC -70 D escription Pin C onnections and Package Marking The INA-12063 is a unique RFIC

FTH A 001 26 10

Contextual Info: SIEMENS SIPMOS Small-Signal Transistor • • • • • • • BSS135 Vos 600 V ID 0.080 A ^DS on 6 0 £2 N channel Depletion mode High dynamic resistance Available grouped in Vosoh) Type Ordering Code Tape and Reel information Pin C onfigu ration Marking

Q1205

Abstract: ss92 BSS92 transistor sS92 siemens ss92
Contextual Info: SIEMENS BSS92 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Type b -0.15 A BSS92 ^DS -240 V Type BSS92 BSS92 BSS 92 Ordering Code Q62702-S497 Q62702-S633 Q62702-S502 flDS(on) 20 a Package Marking

STS 75 SOT23

Abstract: marking BSs sot23 E6327 Q62702-S612 STS SOT
Contextual Info: BSS 139 SIPMOS Small-Signal Transistor ● VDS 250 V ● ID 0.04 A ● RDS on 100 Ω ● N channel ● Depletion mode ● High dynamic resistance Type Ordering Code Tape and Reel Information Pin Configuration Marking BSS 139 Q62702-S612 E6327: 3000 pcs/reel;

Contextual Info: BC857B Transistors PNP General Purpose Transistor I BC857B • I External dimensions Unite : mm Feature* 1 ) B V ceoC — 4 5 V ( lc = — 1m A) 2 ) Complements the BC847B. • Package, marking, and packaging specifications T ype B C 657B Package SST3 M a rk in g

c 129 transistor

Abstract: transistor c 129 Q67000-S073 SIPMOS E6327 BSP129
Contextual Info: BSP 129 SIPMOS Small-Signal Transistor ● VDS 240 V ● ID 0.2 A ● RDS on 20 Ω ● N channel ● Depletion mode ● High dynamic resistance Type Ordering Code Tape and Reel Information Pin Configuration Marking Package BSP 129 Q67000-S073 E6327: 1000 pcs/reel

dpak code

Abstract: On semiconductor date Code dpak TR13
Contextual Info: Package Details - DPAK - Transistor Mechanical Drawing Lead Code: Reference individual device datasheet. Part Marking: Full Part Number Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R2 (05-June 2004)

d 998 transistor circuit

Contextual Info: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 4 1 2 3 Package1) B F 998