TRANSISTOR MARK L6 Search Results

MPSH10

Abstract: MMBTH10 Spice Model NPN power transistor spice y-parameter MMBTH10 TRANSISTOR C 3223 MPS-H10 MPSH10 s parameters
Contextual Info: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

MPSH10 fairchild transistor

Abstract: MMBTH10 Spice Model MPS-H10 MMBTH10 MPSH10 TRANSISTOR C 3223 1358p
Contextual Info: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

TRANSISTOR C 3223

Abstract: MPSH10 MMBTH10 Spice Model NPN power transistor spice MMBTH10
Contextual Info: N MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

mpsh10

Abstract: MPSH10 fairchild transistor MPSH10 s parameters TF135 MMBTH10 Spice Model MPS-H10 BF308 1358p
Contextual Info: MPSH10 / MMBTH10 MPSH10 MMBTH10 C C E E TO-92 B SOT-23 B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 mA to 20 mA range in common emitter or common base mode of operations, and in low frequency

MPSH10 s parameters

Contextual Info: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

MPSH11

Abstract: MPS-H11 transistor mark l6 MMBTH11 Q100 Z-235 Ohmite RF transistor x vs L1245 P4 transistor
Contextual Info: MPSH11 MMBTH11 C E C TO-92 BE SOT-23 B Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving

Contextual Info: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C E TO-92 B B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

rf transistor mark code H1

Abstract: CBVK741B019 F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 D3000
Contextual Info: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

Contextual Info: S E :M i O O N D U C T O R MPSH11 SOT-23 Mark: 3G NPN RF Transistor This device is designed for com m on-em itter low noise am plifier and m ixer applications with collector currents in the 100 |^A to 10 m A range to 300 MHz, and low frequency drift com m on-base

L6 TRANSISTOR

Abstract: transistor mark l6 transistor L7 l5 transistor MARKING l7 l4 transistor marking L6 l7 marking code L6 IC KST1623L6
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation Storage Tem perature

KST1623L7

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 40 5.0 100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage

transistor mark l6

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

transistor mark l6

Abstract: KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23
Contextual Info: KST1623L3/L4/L5/L6/L7 KST1623L3/L4/L5/L6/L7 Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter Value 50 Units

L6 TRANSISTOR

Abstract: transistor L6
Contextual Info: EML6 / UML6N Transistors General purpose transistor isolated transistor and diode EML6 / UML6N 2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package. Dimensions (Unit : mm) Applications DC / DC converter Motor driver EMT5 1.6 0.5 1.0 0.5 0.5

L6012

Abstract: mark code ea1 fcd400 ST 42568 6599 a ic 37943 42568 7498 ttl
Contextual Info: February 1995 wo Linear prel,m inary _ ML6012 3.5" R/W MOD Read Channel Front-end Processor GENERAL DESCRIPTION FEATURES The M L6012 is a BiCM O S Read channel front-end processor 1C which is one-half of the read channel chipset from M icro Linear, intended for 3.5'' Magneto-Optical

schematic diagram tv sony 21 trinitron

Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
Contextual Info: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV

transistor mark l6

Abstract: 2SC5585 RB521S-30 EMT5
Contextual Info: EML6 / UML6N Transistors General purpose transistor isolated transistor and diode EML6 / UML6N 2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package. zDimensions (Unit : mm) zApplications DC / DC converter Motor driver EMT5 1.6 0.5 1.0

transistor mark l6

Abstract: L6 IC 2SC5585 RB521S-30 mark L6
Contextual Info: EML6 / UML6N Transistors General purpose transistor isolated transistor and diode EML6 / UML6N 2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver EMT5 1.6

IC 7481 pin configuration

Contextual Info: MITSUBISHI MICROCOMPUTERS 7480/7481 GROUP .•;• « •:*. ••:•; ^ H P '* * 'i.' * « > * SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION PIN CONFIGURATION The 7480/7481 group is the single-chip microcomputer adopting the silicon gate CMOS process. In addition to its simple instruction

248E-6

Abstract: STMicroelectronics 9*918 F 9212 L6472 ACT 600 diode S 335
Contextual Info: L6472 dSPIN fully integrated microstepping motor driver with motion engine and SPI Features • Operating voltage: 8 - 45 V ■ 7.0 A output peak current 3.0 A r.m.s. ■ Low RDSon power MOSFETs ■ Programmable speed profile ■ Programmable Power MOSFET slew rate

dSPIN

Abstract: f050 transistor L6470 L64704
Contextual Info: L6470 dSPIN fully integrated microstepping motor driver with motion engine and SPI Features • Operating voltage: 8 - 45 V ■ 7.0 A output peak current 3.0 A r.m.s. ■ Low RDSon power MOSFETS ■ Programmable speed profile and positioning ■ Programmable power MOS slew-rate

Contextual Info: L6472 dSPIN fully integrated microstepping motor driver with motion engine and SPI Features • Operating voltage: 8 - 45 V ■ 7.0 A output peak current 3.0 A r.m.s. ■ Low RDSon power MOSFETs ■ Programmable speed profile ■ Programmable Power MOSFET slew rate

Contextual Info: L6472 dSPIN fully integrated microstepping motor driver Datasheet - production data Applications • Bipolar stepper motor Description HTSSOP28 POWERSO36 Features  Operating voltage: 8 - 45 V  7.0 A output peak current 3.0 A r.m.s.  Low RDS(on) Power MOSFETs

Contextual Info: L6472 dSPIN fully integrated microstepping motor driver Datasheet - production data Applications • Bipolar stepper motor Description HTSSOP28 POWERSO36 Features  Operating voltage: 8 - 45 V  7.0 A output peak current 3.0 A r.m.s.  Low RDS(on) Power MOSFETs