TRANSISTOR M7 Search Results

2N5339

Contextual Info: r= 7 SGS-THOMSON m7# lianeæiiiisTissiiiei_ 2N5339 SILICON NPN TRANSISTOR . SGS-THOMSON PR EFER RED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5339 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is intended for high switching applications up to 5A.

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

1D-S marking

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

4 npn transistor ic 14pin

Abstract: lowest noise audio NPN transistor C10535E PA104 MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY
Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • 9 GHz CONFIGURABLE TRANSISTOR BASED OR/NOR CIRCUITRY • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA104B: Studded ceramic package provides superior thermal dissipation

2SA1836

Abstract: SC-75 D1561
Contextual Info: DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SA1836 PNP SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm DESCRIPTION The 2SA1836 is PNP silicon epitaxial transistor. 0.15 +0.1 –0.05 0.3 +0.1 –0 FEATURES • High voltage: VCEO = −50 V • Can be automatically mounted

2SA1836

Abstract: audio Silicon PNP Power nte
Contextual Info: DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SA1836 PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SA1836 is PNP silicon epitaxial transistor. 0.1 +0.1 –0.05 0.3 ± 0.05 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage

4 npn transistor ic 14pin

Abstract: 8 npn transistor ic 14pin C10535E UPA102G
Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA102B: Superior thermal dissipation due to studded 14-pin ceramic package

4 npn transistor ic 14pin

Abstract: MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6
Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA101B: Superior thermal dissipation due to studded 14-pin ceramic package

fairchild marking codes sot-23

Abstract: marking of m7 diodes diode M7 marking M3 KST812M6 Diode marking m7 m7 diode M7 marking codes M7 component KST5088
Contextual Info: KST812M3/M4/M5/M6/M7 KST812M3/M4/M5/M6/M7 General Purpose Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter Value -50

M6 transistor

Abstract: KST812M6 sot-23 marking code pe marking M6 transistor M6 Marking pnp M7 marking codes mark M7 m6 marking transistor transistor SOT23 m6 sot-23 Marking M6
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation

Contextual Info: TRANSISTOR MODULE QCA200A40/60 Q C A 2 00 A is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semicon­

Contextual Info: 711002b QObTSTfl bS3 • P H I N BSS83 7V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.

KST812M6 transistor

Abstract: KST812M6
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit -50 -40 -5 -100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.

KST812M7

Abstract: marking m3 transistor KST5088 KST812M3 KST812M4 KST812M5 KST812M6 m6 marking transistor mark M7 MARKING CODE M6
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA= 2 5t: C haracteristic Sym bol C ollector-B ase Voltage C ollecto r-E m ltte r Voltage E m itter-Base Voltage C ollecto r C urrent C ollecto r D issipation

NP32N055HLE

Abstract: NP32N055ILE
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HLE, NP32N055ILE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

NP40N055CLE

Abstract: MP-25 NP40N055DLE NP40N055ELE
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP40N055CLE, NP40N055DLE, NP40N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching

NP48N055CHE

Abstract: MP25 transistor MP-25 NP48N055DHE NP48N055EHE
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP48N055CHE, NP48N055DHE, NP48N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching

transistor di 960

Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP86N04CHE, NP86N04DHE, NP86N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N055CHE, NP84N055DHE, NP84N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

NP84N06CLD

Abstract: MP-25 NP84N06DLD NP84N06ELD
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N06CLD, NP84N06DLD, NP84N06ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

MP-25

Abstract: NP84N04CHE NP84N04DHE NP84N04EHE NEC 8502
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N04CHE, NP84N04DHE, NP84N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP48N055CHE, NP48N055DHE, NP48N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.