TRANSISTOR L 2 Search Results

TRANSISTOR L 2 Result Highlights (5)

Part	Manufacturer	Description	Download
BLA1011-300	Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
93L422ADM/B	Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
93425ADM/B	Rochester Electronics LLC	93425 - 1K X 1 TTL SRAM	PDF
27S185DM/B	Rochester Electronics LLC	27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18	PDF

TRANSISTOR L 2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor power 5w Abstract: Transistor 5503 transistor 1271 SILICON npn POWER TRANSISTOR c 869 D 595 transistor transistor J17 2052-5636-02 transistor C 1344 transistor Common Base configuration j170 Contextual Info: an AMP company CW Power Transistor, ,2.3 GHz 5W PH2323-5 v2.00 Features l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System	Original	PH2323-5 transistor power 5w Transistor 5503 transistor 1271 SILICON npn POWER TRANSISTOR c 869 D 595 transistor transistor J17 2052-5636-02 transistor C 1344 transistor Common Base configuration j170	PDF
transistor J17 Abstract: transistor j8 2052-5636-02 wacom Z005 Contextual Info: an AMP company Radar Pulsed Power Transistor, 25W, loops Pulse, 10% Duty PH2729-25M 2.7 - 2.9 GHz Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	Original	PH2729-25M 38-j14 35-j16 33-j17 PH2729-25M transistor J17 transistor j8 2052-5636-02 wacom Z005	PDF
NPN TRANSISTOR Z4 Abstract: b 595 transistor transistor z4 n transistor ZY PH3134-65M 572i transistor b 595 Contextual Info: ,-=r=-= -= ZY f .- = r = anAMPcompany * Radar Pulsed Power Transistor, 65W, 1OOp Pulse, 10% Duty PH3134-65M 3.1 - 3.4 GHz Features l l l l l l l l .650 16.51 - NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation	Original	PH3134-65M 225t010 iEV-15 NPN TRANSISTOR Z4 b 595 transistor transistor z4 n transistor ZY PH3134-65M 572i transistor b 595	PDF
13MM Abstract: 817j18 Contextual Info: I .-em _- an AMP company Linear Power Transistor, 40W 850 - 1450 MHz Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class AB Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System	Original		PDF
Radar Abstract: diode gp 429 HV400 hvvi transistor 1150 Contextual Info: HVV1012-050 HVV1012-050 HVV1012-050 HVV1012-050 L-Band L-BandAvionics AvionicsPulsed PulsedPower PowerTransistor Transistor HVV1012-050 L-Band Avionics Pulsed Power The innovative Semiconductor Company! L-Band Avionics Pulsed Power Transistor 1025-1150 1025-1150MHz,	Original	HVV1012-050 HVV1012-050 HVV1012-050MHz, Pulsed10 HVV1012-060 1025-1150MHz, 10sPACKAGE Radar diode gp 429 HV400 hvvi transistor 1150	PDF
transistor c 933 Abstract: transistor j5 Transistor 933 13MM transistor c 144 572 transistor 933 TRANSISTOR 30 w RF POWER TRANSISTOR NPN Contextual Info: an AMP comDanv Wireless Power Transistor, 33W 1805 - 1880 MHz PHl819-33 v2.01 I- Features l l l l l NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffksed Emitter Ballasting Gold Metallization System	Original	PHl819-33 Tl50M50A AlC100A transistor c 933 transistor j5 Transistor 933 13MM transistor c 144 572 transistor 933 TRANSISTOR 30 w RF POWER TRANSISTOR NPN	PDF
2sa1015 equivalent Abstract: 2SA1015 2SC1815 st 2sc1815 Contextual Info: ST 2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor ST 2SC1815 is recommended.	Original	2SA1015 2SC1815 150mA 100mA, 100Hz, 2sa1015 equivalent 2SA1015 st 2sc1815	PDF
2SA1015 Abstract: 2sa1015 equivalent ST 2SA1015 transistor 2sc1815 2SC1815 DATASHEET 2SC1815 st 2sc1815 Contextual Info: ST 2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor ST 2SC1815 is recommended.	Original	2SA1015 2SC1815 150mA 100mA, 100Hz, 2SA1015 2sa1015 equivalent ST 2SA1015 transistor 2sc1815 2SC1815 DATASHEET st 2sc1815	PDF
TLP621 Abstract: MARKING toshiba TLP621-4 e152349 TLP621-4 11-5B2 E67349 TLP621-2 Contextual Info: TOSHIBA TLP621,TLP621-2#TLP621-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR T L P 6 2 1 . T L P 6 2 1 -2 . T L P 6 2 1 -4 PROGRAMMABLE CONTROLLER A C /D C -IN P U T MODULE SOLID STATE RELAY The TOSHIBA TLP621, -2, and -4 consists of a photo-transistor	OCR Scan	TLP621 TLP621 TLP621, TLP621-2, TLP621-4 TLP621-2 TLP621-4 MARKING toshiba TLP621-4 e152349 11-5B2 E67349	PDF
adc 515 Abstract: MJ7000 Contextual Info: MJ7000 SILICON 30 AMPERE POWER TRANSISTOR HIGH-POWER NPN SILICON TRANSISTOR NPN SILICON . . . designed for use in industrial power amplifier and switching circuits applications. 100 V O L T S 150 W ATTS High DC Current Gain — h f E = 20-100 @ l c = 10 Adc	OCR Scan	MJ7000 adc 515 MJ7000	PDF
2SA733 Abstract: st 2SC945 2SA733 Y 2SC945 Contextual Info: ST 2SA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor ST 2SC945 is recommended.	Original	2SA733 2SC945 2SA733 st 2SC945 2SA733 Y 2SC945	PDF
2n3820 transistor Abstract: TIC 106b 2n3820 Contextual Info: TYPE 2N3820 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L -S 6 8 7 9 4 7 , A U G U S T 1 9 6 5 -R E V IS E D J U L Y 1968 SILECTf FIELD-EFFECT TRANSISTOR * For Industrial and Consumer Small-Signal Applications m e c h a n ic a l d a t a	OCR Scan	2N3820 IL-STD-202C, 2n3820 transistor TIC 106b	PDF
CSB507 Abstract: CSD313 Contextual Info: CSB507, CSD313 CSB507 CSD313 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR L i DIM A B C D E F G H J K L M N MIN 14.42 9.63 3.56 MAX 16.51	OCR Scan	CSB507, CSD313 CSB507 CSD313 23fi33< DD01124	PDF
2N4115 Abstract: 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285 2N5346 Contextual Info: llP NPMTO-111 ^ 84aa_^ 2 D I Q D E ISOlaledcnllBntn.-ltenn.-rt' l a f l H B 3 S E TRANSISTOR GO I N C . Ö4D 0G0Q13S □ I 00128 ^— — — t D1DDE TRANSISTOR CQ.J(\IC. FAX ^201^6755883 139-385 * 0u,8lde NV 4 NJ area ca\|l T O LL FR EE 800-526-4581 PNP	OCR Scan	NPWTO-111 fl35a 2N4115 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285 2N5346	PDF

DU1215S Contextual Info: RF MOSFET Power Transistor, ISW, 12V 2 - 175 MHz DU1215S Features l l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Specifically Designed for 12 Volt Applications	Original	DU1215S DU1215S	PDF
pulse transformer bv 070 Abstract: 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer Contextual Info: e-5 -,-5 3 .-= = = -a= =- an AMP company * RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz UF281 OOV v2.00 Features l N-Channel Enhancement &lode Device l DMOS Structure Lower Capacitances l High Saturated Output Power l Lower l for Broadband Operation	Original	UF281 uF261oov 7305OlB2-03 pulse transformer bv 070 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer	PDF
KD421K10 Contextual Info: KD421K10_ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U S l D s r H n Q tO il Transistor Module 100 Amperes/1000 Volts O U T L I N E DRAW ING Description: The Powerex Dual Darlington Transistor Modules are high power	OCR Scan	KD421K10_ Amperes/1000 EIC20- KD421K10 KD421K10	PDF
3BS transistor Abstract: S0642 Contextual Info: rz 7 ^ 7# SGS-THOMSON R L ie r a « S 0 6 4 2 SMALL SIGNAL NPN TRANSISTOR Type Marking SO 642 N91 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER	OCR Scan	S0692 OT-23 SC06960 S0642 OT-23 3BS transistor S0642	PDF
UF28156 Abstract: UF2815B L5 mosfet Contextual Info: = - EC an AMP company z = RF MOSFET Power Transistor, 15W, 28V 100 - 500 MHz UF28156 v2.00 Features l l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower -Noise Floor 100 MHz to 500 MHz Operation	Original	UF28156 270pf 82Opf lx28158 UF28156 UF2815B L5 mosfet	PDF
PH1819-10 Abstract: Bv 42 transistor j73 diode TRANSISTOR BV 32 PH1819 Contextual Info: ,z= i-s = -A= =c an AMP company * = .-= - = - Wireless Bipolar Power Transistor, 1OW 1.78 - 1.90 GHz l l l l v2.00 ,744 :lE.SZ Features l PH1819-10 5s: .,4 22 +-, / Designed for Cellular Base Station Applications -30 dBc Typ 3rd IMD at 10 Watts PEP	Original	PH1819-10 Fld850 PH1819-10 Bv 42 transistor j73 diode TRANSISTOR BV 32 PH1819	PDF
ISS270 Abstract: 1S22 DU2812OV I522 Transistor Equivalent list Contextual Info: RF MOSFET Power Transistor, 12OW, 28V 2 - 175 MHz DU2812OV Features l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices . Absolute Maximum Ratings at 25°C	Original	DU2812OV ISS270 1S22 DU2812OV I522 Transistor Equivalent list	PDF
transistor on 4409 Abstract: transistor on 4408 2NS399 2N5399 TA968 A7016 2n 4409 Contextual Info: TYPE 2N5399 N-P-N SILICON TRANSISTOR B U L L E T IN N O . D L-S 6 8 1 0 6 6 6 . S E P T E M B E R 1966 RADIATION-TOLERANT TRANSISTOR FOR LOW-POWER GENERAL PURPOSE VHF-UHF AMPLIFIER AND SATURATED-SWITCHING APPLICATIONS • Guaranteed I cbo/ hfE and V«,«., after lx lO 15 Fast Neutrons/cm2	OCR Scan	2N5399 2NS332 transistor on 4409 transistor on 4408 2NS399 TA968 A7016 2n 4409	PDF
transistor Common Base configuration Abstract: IB0810M50 IB0810M12 f 0952 radar circuit component transistor Common collector configuration ballast 300 watt Transistor Data Book Contextual Info: Part Number: Integra IB0810M12 TECHNOLOGIES, INC. 12 Watt L-Band Radar Transistor Frequency : Output Power : Power Gain : Efficiency : Output VSWR : Pulse Width : Duty Factor : Collector Voltage : Driver Transistor Use as driver transistor IB0810M50. for Bandwidth	Original	IB0810M12 IB0810M50. IB0810M12-SF-REV-NC transistor Common Base configuration IB0810M50 IB0810M12 f 0952 radar circuit component transistor Common collector configuration ballast 300 watt Transistor Data Book	PDF
2T3107 Abstract: 2T3 transistor CMBT3905 marking d7b Contextual Info: CMBT3905 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arkin g CM BT3905 = 2Y P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.90 A BSO L U TE M A X IM U M R A TIN G S C ollector-base voltage open emitter	OCR Scan	CMBT3905 23A3314 2T3107 2T3 transistor CMBT3905 marking d7b	PDF

TRANSISTOR L 2 Search Results

TRANSISTOR L 2 Result Highlights (5)

TRANSISTOR L 2 Datasheets Context Search

transistor power 5w

transistor J17

NPN TRANSISTOR Z4

13MM

Radar

transistor c 933

2sa1015 equivalent

2SA1015

TLP621

adc 515

2SA733

2n3820 transistor

CSB507

2N4115

DU1215S

pulse transformer bv 070

KD421K10

3BS transistor

UF28156

PH1819-10

ISS270

transistor on 4409

transistor Common Base configuration

2T3107