TRANSISTOR L 043 A Search Results

NPN Transistor 2N3055

Abstract: transistor 2N3055 2N3055 J 2N3055 transistor k 525
Contextual Info: Silicon NPN Transistor 2N3055 Dim. Inches Minimum Pin 1 — Base Pin 2 — E m itte r Pin 3 — Collector A B C D E F G H J K L M M illim eter Maximum Minimum _ .250 .435 .038 1.177 .655 .420 - .151 .205 - .875 .450 -.043 1.197 .675 .440 .525

Contextual Info: SA M S U N G E L E C T R O N I C S INC MMBT4401 MSE I> • 7ñb4142 000^043 A BHSM6K NPN EPITAXIAL SILICON TRANSISTOR SWITCHING TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25°C ' C h a r a c t e r is t ic Sym bol R a tin g U n it C o llecto r-B a se Voltage

LM875

Abstract: TRANSISTOR L 043 A 2N6678
Contextual Info: 2N6678 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6678 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE TO- 3 INCHES A MAXIMUM RATINGS 15 A Ib 5.0 A < B le 400 V O m 875 MAX. 135 MAX. .2 5 0- 043 DIA.

Contextual Info: m 2N6678 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6678 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE T O - 3 INCHES 875 MAX. A MAXIMUM RATINGS B 135 MAX. .2 5 0- 043 DIA. C MILLIMETERS 22.23 MAX.

2SC2340

Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
Contextual Info: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers

ZENER 148 Datasheet

Abstract: IC 406
Contextual Info: NTE2340 Silicon NPN Transistor Darlington Power Amp, Switch Features: D 60V Zener Diode Built–In Between Collector and Base D Very Small Fluctuation in Breakdown Voltages D Large Energy Handling Capability D High Speed Switching Absolute Maximum Ratings: TC = +25°C unless otherwise specified

transister

Abstract: DC-12 DC-13 EN50081-2 EN50082-2 UZKB111 UZKB1115 UZKB811 UZKB812
Contextual Info: UZKB1.fm 1 y [ W Q O O O N U P O œ @ y j œ @ O P P P R “ UZKB1 Series SMALL/SLIM OBJECT DETECTION AREA SENSORS CROSS-BEAM SCANNING SYSTEM TO DETECT SLIM OBJECTS Letter or Visiting Card Detectable! Emitting and Receiving Element Pitch: 10mm .394inch Just 10mm .394inch Thick

GE-MOV

Abstract: varistor 82z2 Varistor RU 22z1 VARISTOR 56z2 VARISTOR 39Z1 gemov 18Z1 capacitor 47z1 33Z1
Contextual Info: ZA SERIES R EPLA C EM EN T FO R the following when used as transient suppressor: • Selenium Tryectors • Zener Diodes • Silicon Carbide • Gas Discharge Tubes • R-C Networks non-dv/dt • Neon Bulbs • Electronic Crowbar Circuits APPLICATIONS •

Contextual Info: m 2N6677 \ \ SILICO N NPN PO W ER T R A N SIST O R DESCRIPTION: The 2N6677 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. P A C K A G E STYLE T O - 3 MAXIMUM RATING S lc 15 A Ib 5.0 A ce 400 V P d is s 175 W @ Tc = 25 °C

Contextual Info: Philips Components D a ta s h e e t sta tu s Product specification d ate of Issue October 1990 BSP106 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES . Very low RDS on • Direct interface to CMOS, TTL, etc. • High-speed switching

Contextual Info: WJ-EA53-2 5 to 500 MHz TO-5 CASCADABLE AMPLIFIER ♦ HIGH GAIN: 19 dB TYP. ♦ MEDIUM OUTPUT POWER: +11 dBm (TYP.) ♦ VERY SMALL SIZE: TO-5 PACKAGE Specifications* Outline Drawings Typical Characteristic Frequency (Min.) Small Signal Gain (Min.) Gain Flatness (Max.)

Contextual Info: A L LE GR O M I C R O S Y S T E M S INC T3 D • D S O l433ñ D G 0 3 7 7 3 1 ■ AL GR T-91-01 P R O C E S S PJ32 Process PJ32 P-Channel Junction Field-Effect Transistor Process PJ32 is a P-channel junction field-effect transistor designed a s a complement to P rocess

b50112

Abstract: lm78m05 LM341-LM78M LM341-5.0 H03A LM341 LM78M05CH LM78M12CH LM78M15CH LM78MXX
Contextual Info: July 1994 Semiconductor National LM341, LM78MXX Series 3-Terminal Positive Voltage Regulators General Description Features The LM341 and LM78MXX series of three-terminal positive voltage regulators employ built-in current limiting, thermal shutdown, and safe-operating area protection which makes

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# EMZ1 Features • x x x • • • Halogen free available upon request by adding suffix "-HF" 2SC2412 and 2SA1037 are housed independently in a package

NEC Ga FET marking L

Abstract: U/25/20/TN26/15/850/NE32984D
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm

Contextual Info: L3Z D st.42205 naaaabs 421 MAP MlKO UHF PULSED POWER TRANSISTOR PH0404-30 PRELIMINARY REV. NC 04/03/91 M/A-COn P H * M/A-COM PHI, INC. DESIGN CHARACTERISTICS • • • • • 20 mS Long Pulse Operation 0.420 - 0.450 GHz Operation Common Base Conliguration

Contextual Info: h3Z D • s b M 2 2 0 s aaooat,3 3t,a ■ /mtm h ap UHF PULSED POWER TRANSISTOR PH0404-100 PRELIMINARY REV. NC 04/03/91 M/A-COn * M M /A .n O M P H I IK M/A-COM PHI, INC. P H 0 DESIGN CHARACTERISTICS • • • • • 20 mS Long Pulse Operation 0.420 - 0.450 GHz Operation

5vdc

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MJ423 Features • • With TO-3 package For medium-to-high voltage inverters ,converters, regulators and

ma2027

Abstract: PH1214-80M
Contextual Info: t,3E D 5L42E05 DQ0DÖM3 57T MAP MICROWAVE PULSED POW ER TRANSISTOR PH1214-8.0M PRELIMINARY REV. NC 05/05/92 n/A-con * M/A-COM PHI, INC. p h o DESIGN CHARACTERISTICS 100 uS Pulse Operation Broadband 1.2 -1.4 GHz Operation Common Base Configuration Gold Metallization System

transistor k450

Contextual Info: , L/ne. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N2063A Transistor, Bipolar, CE PNP Power Military/High-Rel : N V(BR)CEO (V) : 20 V(BR)CBO (V) : 40 i MAX. n U-.87S -J I(C) M a x . (A) : 5.0

BFY55

Abstract: transistor f 421 1F t transistor Silicon Epitaxial Planar Transistor philips
Contextual Info: BFY55 PHILIPS INTERNATIONAL SbE D Bi 711üflSb 00422^2 043 I IPHIN T -3 h 2 3 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in TO-39 metal case with the collector connected to the case. It is primarily intended for use in high frequency and very high frequency oscillators and amplifiers as well as for output stages

Contextual Info: 2N3055 m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS PACKAGE STYLE T O - 3 lc 15 A Ib 7.0 A L - . 6 7 5 «J I MAX. [ .1 3b MAX. T V2bQ filò -L ÏÏ SE A U N G

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MJ423 Features • • With TO-3 package For medium-to-high voltage inverters ,converters, regulators and

MJ423

Contextual Info: MCC TM Micro Commercial Components Micro Commercial Components Corp. Products End of Life Notification Issue date: Oct-23th-2008 Last Buy Date :Dec-31th-2008 Description and Purpose: MCC has undergone a review of its core business and products , and determined to discontinue below products: