TRANSISTOR KF5N50 102 Search Results

TRANSISTOR KF5N50 102 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR KF5N50 102 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor KF5n50 Abstract: KF5N50 mosfet KF5N50 KF5N50P KF5N50F transistor KF5n50 102 FZ 101 KF5N50FZ Contextual Info: SEMICONDUCTOR KF5N50P/F/PZ/FZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N50P, KF5N50PZ A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and	Original	KF5N50P/F/PZ/FZ KF5N50P, KF5N50PZ KF5N50P KF5N50PZ Fig15. Fig16. Fig17. transistor KF5n50 KF5N50 mosfet KF5N50 KF5N50F transistor KF5n50 102 FZ 101 KF5N50FZ	PDF
kf5n50 Abstract: transistor KF5n50 mosfet KF5N50 KF5N50DZ transistor KF5n50 102 kf5n50 ds KF5N50D kf5n50ds DIODE MARKING 534 "Field Effect Transistor" Contextual Info: SEMICONDUCTOR KF5N50DR/DS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for	Original	KF5N50DR/DS 150ns Fig13. Fig14. Fig15. kf5n50 transistor KF5n50 mosfet KF5N50 KF5N50DZ transistor KF5n50 102 kf5n50 ds KF5N50D kf5n50ds DIODE MARKING 534 "Field Effect Transistor"	PDF
KF5N50 Abstract: transistor KF5n50 KF5N50D mosfet KF5N50 Contextual Info: SEMICONDUCTOR KF5N50D/DZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and	Original	KF5N50D/DZ Fig12. Fig13. Fig14. Fig15. KF5N50 transistor KF5n50 KF5N50D mosfet KF5N50	PDF
kf5n50 ds Abstract: transistor KF5n50 KF5N50 KF5N50DZ Contextual Info: SEMICONDUCTOR KF5N50DZ/DS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for	Original	150ns KF5N50DS) 300ns KF5N50DZ) KF5N50DZ/DS Fig13. Fig14. Fig15. kf5n50 ds transistor KF5n50 KF5N50 KF5N50DZ	PDF
transistor KF5n50 Abstract: KF5N50FS KF5N50 KF5N50 fs mosfet KF5N50 FS transistor KF5n50 fs 102 transistor KF5n50fs KF5N50F mosfet KF5N50 KF5N50P Contextual Info: SEMICONDUCTOR KF5N50PS/FS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N50PS A This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for	Original	150ns KF5N50PS/FS KF5N50PS EnerFig14. Fig15. Fig16. Fig17. transistor KF5n50 KF5N50FS KF5N50 KF5N50 fs mosfet KF5N50 FS transistor KF5n50 fs 102 transistor KF5n50fs KF5N50F mosfet KF5N50 KF5N50P	PDF
transistor KF5n50 Abstract: KF5N50 KF5N50D mosfet KF5N50 Contextual Info: SEMICONDUCTOR KF5N50D/DZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and	Original	KF5N50D/DZ Fig13. Fig14. Fig15. transistor KF5n50 KF5N50 KF5N50D mosfet KF5N50	PDF
Contextual Info: SEMICONDUCTOR KF5N50PS/FS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N50PS A This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for	Original	KF5N50PS/FS KF5N50PS 150ns KF5N50FS Fig15. Fig16. Fig17.	PDF
KF5N50DS Abstract: KF5N50 transistor KF5n50 kf5n50 ds fast recovery diode 400v 5A transistor KF5n50ds mosfet KF5N50 IS43A mosfet KF5N50DS Contextual Info: SEMICONDUCTOR KF5N50DS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for	Original	150nS KF5N50DS Fig12. Fig13. Fig14. Fig15. KF5N50DS KF5N50 transistor KF5n50 kf5n50 ds fast recovery diode 400v 5A transistor KF5n50ds mosfet KF5N50 IS43A mosfet KF5N50DS	PDF
transistor KF5n50 Abstract: KF5N50 mosfet KF5N50 KF5N50PZ Contextual Info: SEMICONDUCTOR KF5N50PZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and	Original	KF5N50PZ Fig13. Fig14. Fig15. transistor KF5n50 KF5N50 mosfet KF5N50 KF5N50PZ	PDF