TRANSISTOR KF Search Results

MCT8 opto

Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
Contextual Info: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

D1316

Abstract: 2SA1744
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at Low VCE(sat). This transistor is

2SA1841

Abstract: darlington transistor for audio power application
Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1841 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SA1841 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment.

A7800

Abstract: 34G3S ic 7800 kf 1300
Contextual Info: FZ 1200 R 16 KF 1 Transistor Transistor Thermische Eigenschaften Thermal properties RthJC DC, pro Baustein / per module 0,016 RthCK pro Baustein / per module 0,008 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values

Contextual Info: FS 8 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 1200 V ces Thermische Eigenschaften Thermal properties DC, pro Baustein / per module 0,26 R th J C DC, pro Zweig / per arm 1,56

alps stec

Abstract: 25r06
Contextual Info: FS 25 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Hochstzulässige W erte V ces Maximum rated values •c Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,21 RthJC DC, pro Zweig / per arm 1,25

Contextual Info: FF 25 R 12 KF 2 Transistor Transistor Thermische Eigenschaften Rthjc Elektrische Eigenschaften 1Electrical properties RthCK Höchstzulässige W erte Maximum rated values Thermal properties pro Baustein / per module D C , pro Zweig / per arm pro Baustein / per module

Contextual Info: FZ 300 R 12 KF 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values 1200 Thermal properties RthJC DC, pro Baustein / per module 0 ,0 6 3 RthCK pro Baustein / per module

Contextual Info: FF 300 R 06 KF 2 Therm ische Eigenschaften Therm al properties 0,05 DC, pro Baustein / per module 0,10 DC, pro Zweig / per arm pro Baustein / per module 0,03 RthCK 0,06 pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften Electrical properties

Contextual Info: FZ 360 R 17 KF Transistor Transistor Therm ische Eigenschaften Thermal properties DC, pro Baustein / per module 0,035 °CAW RthJC Elektrische Eigenschaften Electrical properties Hochstzulässige W erte VcES Maximum rated values 1700 V 360 A RthCK le 0,025 °C/W

Contextual Info: FZ 360 R 17 KF Thermische Eigenschaften Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 1700 V 360 A V CES Thermal properties RthJC DC, pro Baustein / per module 0,035 RthCK pro Baustein / per module

Contextual Info: FS 50 R 12 KF Thermische Eigenschaften Thermal properties DC, pro Baustein / per module 0,068 R th J C DC, pro Zweig / per arm 0,410 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 1200 V 50

Contextual Info: FS 25 R 12 KF 2 Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/per module 0,104 °C/W DC, pro Zweig/per arm 0,625 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 1200

F 300 R 1200 KF

Abstract: FZ 76 1000
Contextual Info: FZ 200 R 12 KF Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module 0,088 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcES 1200 V 200 A 150

F 300 R 1200 KF

Contextual Info: FZ 200 R 12 KF Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module 0,088 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcES 1200 V 200 A 150

TRANSISTOR BI 187

Contextual Info: FZ 300 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Thermal properties 0,062 °C/W DC, pro Baustein / per module RHhüc , RthCK 0,03 pro Baustein / per module °C/W Maximum rated values VcES lc 1200

Contextual Info: FF 300 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 300 A lc Thermische Eigenschaften Rthjc RthCK Thermal properties DC, pro Baustein/per module DC, pro Zweig / per arm pro Baustein/per module

2SA1871

Abstract: 2sc4942
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SA1871 PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SA1871 is a transistor developed for high-speed high- PACKAGE DRAWING UNIT: mm voltage switching and is ideal for use in switching elements such

Contextual Info: FZ 400 R 12 KF 2 Thermische Eigenschaften Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 400 A Thermal properties RthJC DC, pro Baustein / per module 0,052 °C/W R» pro Baustein / per module 0,03 150 °C

Contextual Info: FZ 800 R 12 KF 1 Thermische Eigenschaften Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 800 A Thermal properties Rthjc DC, pro Baustein /p e r module 0,02 °C/W RthCK pro Baustein / per module 0,01 °C/W