TRANSISTOR K8A50D Search Results

TRANSISTOR K8A50D Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR K8A50D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor K8A50D Abstract: k8a50d Contextual Info: TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK8A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 4.0 S (typ.)	Original	TK8A50D transistor K8A50D k8a50d	PDF
transistor K8A50D Abstract: K8A50D TK8A50D K8A50 K*A50D tk8a50 Contextual Info: TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK8A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 4.0 S (typ.)	Original	TK8A50D transistor K8A50D K8A50D TK8A50D K8A50 K*A50D tk8a50	PDF
transistor K8A50D Abstract: K8A50D tk8a50d K8A50 TK8A50 TK8A50D equivalent C20500 Contextual Info: TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK8A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 4.0 S (typ.)	Original	TK8A50D transistor K8A50D K8A50D tk8a50d K8A50 TK8A50 TK8A50D equivalent C20500	PDF
K8A50D Contextual Info: TK8A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK8A50DA Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 3.2 ± 0.2 (typ.) Low drain-source ON-resistance: RDS (ON) = 0.76 High forward transfer admittance: ⎪Yfs⎪ = 4.1 S (typ.)	Original	TK8A50DA K8A50D	PDF
Contextual Info: TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK8A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 4.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	TK8A50D	PDF
k8a50d Abstract: k8a50 Contextual Info: TK8A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK8A50DA Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 Ф3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 0.76 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.1 S (typ.)	Original	TK8A50DA k8a50d k8a50	PDF
K8A50D Abstract: K8A50 TK8A50D TK8A50 K8A50DA TK8A50DA Contextual Info: TK8A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK8A50DA Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 Ф3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 0.76 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.1 S (typ.)	Original	TK8A50DA K8A50D K8A50 TK8A50D TK8A50 K8A50DA TK8A50DA	PDF