TRANSISTOR K4013 Search Results

Contextual Info: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS 2SK4013 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)

transistor k4013

Abstract: k4013 K4013 transistor 2SK4013 MARKING toshiba 133
Contextual Info: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 640 V)

K4013

Abstract: 2SK4013 transistor k4013 K4013 transistor
Contextual Info: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)

2SK4013

Abstract: transistor k4013 K4013 transistor k4013
Contextual Info: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 640 V)

k4013

Abstract: 2SK4013 transistor k4013 K4013 transistor
Contextual Info: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)

Contextual Info: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)

stk 490 110

Abstract: stk 490 310 stk 490 070 4830A k4013 Transistor y2n stk 490 040 stk*470 090 stk 470 070 STK 290 010
Contextual Info: Ordering number : EN4830A Thick Film Hybrid 1C No.4830A S TK 400-020 3-Channel AF Power Amplifier Split Power Supply ( 1 5 W + 1 5 W + 1 5 W min, THD = 0.4 %) Overview Package Dimensions Now, thick-film audio power amplifier ICs are available with pin-com patibility to permit a single PCB to be

stk*470 090

Abstract: stk 490 070 4822a stk 490 040 stk*0460 Sanyo STK 098 stk 490 -110 STK 290 010 stk 490 110 stk*401-130
Contextual Info: Ordering number : EN4022A Thick Film Hybrid 1C STK400-290 No. 4822A AF Power Amplifier Split Power Supply (50 W + 50 W + 50W min, THD = 0.08%) I Package Dimensions Overview Now, thick-film audio power amplifier ICs are available with pin-com patibility to permit a single PCB to be

k30206

Abstract: SENSOR HALL 946 s 452 kd 2060 transistor
Contextual Info: Complete Catalogue 4/2015 Residual current monitoring in grounded power supply systems with residual current relay type RCM1000V and current transformers type STWA3D Meas uring, C ontr olling, Moni t o r i n g o n h i g h e s t l e v e l Editorial Besser, schneller, innovativer, das ist unsere Maxime bei