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    TRANSISTOR K13A60D Search Results

    TRANSISTOR K13A60D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    TRANSISTOR K13A60D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K13A60D

    Contextual Info: TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII TK13A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original     		TK13A60D K13A60D PDF

    K13A60D

    Abstract: k13a60
    Contextual Info: TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK13A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original     		TK13A60D K13A60D k13a60 PDF

    k13a60

    Abstract: K13A60D TK13A60D k13a 90VL
    Contextual Info: TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK13A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original     		TK13A60D k13a60 K13A60D TK13A60D k13a 90VL PDF

    K13A60D

    Abstract: TK13A60D k13a60 transistor K13a60d K13A60D TO-220F K13A
    Contextual Info: TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original     		TK13A60D K13A60D TK13A60D k13a60 transistor K13a60d K13A60D TO-220F K13A PDF