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    TRANSISTOR K1119 POWER SWITCHING Search Results

    TRANSISTOR K1119 POWER SWITCHING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    		Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    ICL7662MTV/B
    		Rochester Electronics LLC ICL7662 - Switched Capacitor Converter, 10kHz Switching Freq-Max, CMOS PDF Buy
    ICL7660SMTV
    		Rochester Electronics LLC ICL7660 - Switched Capacitor Converter, 0.02A, 17.5kHz Switching Freq-Max, CMOS, MBCY8 PDF Buy
    LM1578AH/883
    		Rochester Electronics LLC LM1578 - Switching Regulator, Current-mode, 0.75A, 100kHz Switching Freq-Max, MBCY8 - Dual marked (5962-8958602GA) PDF Buy
    DG201AK/B
    		Rochester Electronics LLC DG201A - 15.0V SPST CMOS Switch PDF Buy

    TRANSISTOR K1119 POWER SWITCHING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    k1119

    Abstract: transistor k1119 power switching
    Contextual Info: FIELD EFFECT TRAN SISTO R 2SK1119 SILICON N CHANNEL MOS TYPE a:-MOSii HIGH S P EE D ,H IG H CURRENT SWITCHING A P P LIC ATIO N S. INDUSTRIA L APPLICATIO NS SWITCHING POWER SUPPLY A PP LIC ATIO NS. U n i t in mm 10.3MAI. *3.6±0.2 îï FEATURES: • Low D ra in -S o u r c e ON R e s is ta n c e :


    OCR Scan     		2SK1119 Puls700 k1119 transistor k1119 power switching PDF

    k1119

    Contextual Info: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		2SK1119 k1119 PDF

    k1119

    Abstract: 2SK1119 2-10P1B
    Contextual Info: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Unit: mm


    Original     		2SK1119 k1119 2SK1119 2-10P1B PDF

    K1119

    Abstract: 2SK1119 2-10P1B
    Contextual Info: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		2SK1119 K1119 2SK1119 2-10P1B PDF

    K1119

    Abstract: 2SK1119 2-10P1B
    Contextual Info: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		2SK1119 K1119 2SK1119 2-10P1B PDF

    k1119

    Abstract: 2-10P1B 2SK1119
    Contextual Info: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		2SK1119 k1119 2-10P1B 2SK1119 PDF