TRANSISTOR K 135 J 50 Search Results

2SC1623K

Abstract: SOT-23-hg 2SC1623K-P sot-23 Marking l7 TRANSISTOR NPN 60V 600 MARKING CODE
Contextual Info: 2SC1623K 0.1A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High DC current gain :hFE=200 Typ , VCE=6V, IC=1mA. High Voltage:VCEO=50V. A L 3 3 C B Top View

VHB40-12F5

Contextual Info: VHB40-12F5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The VHB40-12F5 is Designed for Class C Amplifier Applications in VHF Mobile Radios. PACKAGE STYLE .500 6L FLG 3 2x Ø N FU LL R D 2 B MAXIMUM RATINGS E .725/18,42 F G M K H 5.0 A 36 V VCBO A 3 • PG = 9.5 dB Typ. at 40 W /175 MHz

2SC2904

Abstract: 2sc2904 TRANSISTOR transistor 835 H22A
Contextual Info: 2SC2904 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2904 is a silicon epitaxial plana type transistor designed for high power amplifiers in HF band. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x Ø N • Internal Input Matching Network • PG = 11.5 dB at 1000 W/30 MHz

MRF644

Contextual Info: MRF644 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF644 is a gold metallized RF power transistor designed for 12.5 V Class-C applications in 450-513 MHz frequency range. PACKAGE STYLE .500 6L FLG A C FEATURES: E • Internal Input Matching Network

2SA812K

Abstract: sot-23 Marking M6 M6 SOT23-3 marking of m7 diodes Diode marking m7 M6 Marking pnp m6 marking transistor sot-23 M6 transistor TRANSISTOR K 135
Contextual Info: 2SA812K -50 V, -100 mA PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z Complementary to 2SC1623K High DC Current Gain: hFE = 200 TYP. VCE = -6V, IC = -1mA

Contextual Info: TVV030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN • Common Emitter • PG = 7.5 dB at 30 W/225 MHz • Omnigold Metalization System

TVV030

Abstract: ASI10660
Contextual Info: TVV030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x Ø N • Common Emitter • PG = 6.0 dB at 30 W/225 MHz • Omnigold Metalization System

sd1441

Abstract: SD-1441
Contextual Info: SD1441 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1441 is a12.5 V epitaxial silicon NPN plannar transistor. Designed primarily for VHF communication in the 175 MHz frequency. PACKAGE STYLE .500 6L FLG A C FEATURES: 1 3 2x Ø N FULL R • 175 MHz 12.5 V

2SC2782

Abstract: NPN 2SC2782 transistor 2sc2782
Contextual Info: 2SC2782 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band. PACKAGE STYLE .500 6L FLG A C 1 3 2x Ø N FULL R D FEATURES: 2 • 175 MHz 12.5 V

BLV25

Contextual Info: BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG A C The ASI BLV25 is a 28 V silicon NPN power transistor designed primarily for VHF FM broadcast transmitters. 1 2 2x Ø N FULL R D FEATURES: 3 • 28 V operation • PG = 10 dB at 175 W/108 MHz

BLV25

Contextual Info: BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG A C The ASI BLV25 is a 28 V silicon NPN power transistor designed primarily for VHF FM broadcast transmitters. 2 1 2x Ø N FU LL R D FEATURES: 4 3 • 28 V operation • PG = 1.0 dB at 175 W/108 MHz

ASI10589

Abstract: FMB175
Contextual Info: FMB175 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB175 is a 28 V silicon NPN power transistor designed primarily for FM broadcast transmitters. Diffused emitter ballast provides high VSWR capability under rated operation conditions. PACKAGE STYLE .500 6L FLG

TCA150

Contextual Info: 7 2 9 4 6 2 1 POWEREX INC D E § 7 B cl 4t,21 D0QE171 y / jp iA M n E r* ^ V V M Ec fflE A 3 f 7^ 33 JS ~ " D66EV Fast Switching Single Darlington Transistor Module D66DV Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 50 Amperes

3576 transistor

Abstract: SNA-186
Contextual Info: SNA-186 DC-8GHz Cascadable GaAs HBT MMIC Amp October, 1995 66 Plastic Package Features - Patented GaAs HBT Technology - Cascadable 50-0hm -1.8:1 VSWR - 12dB Gain, +26dBm TOIP Operates from Single Supply • Low Cost Surface Mount Plastic Package Description

0118 transistor

Abstract: K 192 A transistor dual transistor sot le50pa SOT-26 01 MARKING CODE Marking sy sot TRANSISTOR marking k2 dual
Contextual Info: Central CIMD6A Sem iconductor Corp. SURFACE MOUNT DUAL COMPLEMENTARY SILICON DIGITAL TRANSISTORS 50V, 100mA DESCRIPTION: The Central Semiconductor CIMD6A is a Dual Complementary Digital Transistor in a SOT-26 surface mount package, designed for switching

ULBM45

Abstract: ASI10685
Contextual Info: ULBM45 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM45 is a gold metallized RF power transistor designed for 12.5 V class-C UHF communication applications. The device utilizes emitter ballasting to achieve high reliability and ruggedness. PACKAGE STYLE .500 6L FLG

VHB125-28

Abstract: ASI10731 j105 transistor
Contextual Info: VHB125-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB125-28 is NPN RF power transistor designed primarily for VHF communications. It utilizes Emitter ballasting to provide high VSWR handling capability. PACKAGE STYLE .500 6L FLG FEATURES: C A

Contextual Info: MOTOROLA O rder this docum ent by MJE18009/D SEMICONDUCTOR TECHNICAL DATA M JE 18009 M JF18009 D esigner’s Data Sheet SWITCHMODE™ NPN Silicon Planar Pow er Transistor POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific s ta te -o f-th e -a rt die designed for

ULBM25

Abstract: ASI10683
Contextual Info: ULBM25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM25 is a gold metallized RF power transistor designed for 12.5 Class-C applications in 450-513 MHz frequency range. It utilizes Emitter Ballasting to achieve high reliability and ruggedness. PACKAGE STYLE .500 6L FLG

SD1434

Abstract: 2sd1434
Contextual Info: SD1434 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1434 is a gold metallized RF power transistor designed for 12.5 V class-C UHF communication applications. The device utilizes emitter ballasting to achieve high reliability and ruggedness. PACKAGE STYLE .500 6L FLG

2n2484 NPN Transistor features

Abstract: 2N2484
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistor FEATURES 2N2484 PINNING • Low current max. 50 mA PIN DESCRIPTION • Low voltage (max. 60 V) 1 2 base APPLICATIONS 3 collector, connected to the case emitter • General purpose switching and amplification

transistor et 454

Abstract: B686 2SD774 pt 4115 T1IU 2SB734 K0559
Contextual Info: Silicon Transistor 2SD774 N PN i + 9 IJ =1 V h NPN Silicon Epitaxial Transistor Audio Frequency Power Am plifier * M S /P A C K A G E DIMENSIONS Unit •mm 0 2SB734 t ^ > 7"U > > ? ') T l i f f l t i i t . < . S B tE T 'to P t = 1.0 W, V ceo = 50 V * & * * * * £ * & /A B S O L U T E M A XIM U M RATINGS {Ta = 25 X )

1b50a

Abstract: diode T35 DI 380 Transistor T35 diode D64EV6 Transistor AC 188 mrc 100a
Contextual Info: 7294621 POWEREX INC 1 ^ 1 7 2 ^ 4 ^ .5 1 m / w w O O O S lt.7 1 "7 ~ ~ 3 3 ~ 3 S " D64EV x Powerex, Inc., Hillis Street, Ybungwood, Pennsylvania 15697 412 925-7272 Fast Switching Single Darlington Transistor Module 50 Amperes 500-600-700 Volts Description

BUV20

Contextual Info: MOTOROLA Order this document by BUV20/D SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications.