TRANSISTOR K 135 Search Results
TRANSISTOR K 135 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BLA1011-2 |
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Avionics LDMOS transistor |
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RX1214B300YI |
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RX1214B300Y - Microwave Power Transistor |
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CA3127MZ |
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CA3127 - Transistor Array |
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RX1214B130YI |
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NPN microwave power transistor |
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MX0912B251Y |
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NPN microwave power transistor |
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TRANSISTOR K 135 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1116/A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION Complement to UTC 2SD1616/A ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1116L-x-T92-B 2SB1116G-x-T92-B 2SB1116L-x-T92-K 2SB1116G-x-T92-K |
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2SB1116/A 2SD1616/A 2SB1116L-x-T92-B 2SB1116G-x-T92-B 2SB1116L-x-T92-K 2SB1116G-x-T92-K 2SB1116L-x-T92-R 2SB1116G-x-T92-R 2SB1116AL-x-T92-B 2SB1116AG-x-T92-B | |
Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1F4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with AN1F4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
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Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with AN1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
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Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1L4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with AA1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
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d1616Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1A4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with AN1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
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Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1F4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with AN1F4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
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Contextual Info: DATA SHEET COMPOUND TRANSISTOR BN1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with BA1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
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Contextual Info: DATA SHEET COMPOUND TRANSISTOR BN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
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Contextual Info: DATA SHEET COMPOUND TRANSISTOR BA1F4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with BN1F4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
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Contextual Info: DATA SHEET COMPOUND TRANSISTOR BA1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with BN1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
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Contextual Info: DATA SHEET COMPOUND TRANSISTOR BN1F4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with BA1F4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
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Contextual Info: DATA SHEET COMPOUND TRANSISTOR BN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
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Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with AN1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
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BA1A4ZContextual Info: DATA SHEET COMPOUND TRANSISTOR BA1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
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Contextual Info: DATA SHEET COMPOUND TRANSISTOR BA1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
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Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with AA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
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Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with AA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
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Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1L4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with AA1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
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D1359Contextual Info: DATA SHEET COMPOUND TRANSISTOR BN1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with BA1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
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D1617Contextual Info: DATA SHEET COMPOUND TRANSISTOR BA1F4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with BN1F4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
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431.K
Abstract: transistor smd marking 431 transistor smd code marking 431 transistor smd marking 431.k 431 SMD CODE MARKING 431 TRANSISTOR smd marking code 4e PIMN31 transistor smd code marking 420 TRANSISTOR SMD MARKING CODE
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PIMN31 OT457 SC-74) AEC-Q101 PIMN31 431.K transistor smd marking 431 transistor smd code marking 431 transistor smd marking 431.k 431 SMD CODE MARKING 431 TRANSISTOR smd marking code 4e transistor smd code marking 420 TRANSISTOR SMD MARKING CODE | |
transistor smd ZH
Abstract: TRANSISTOR SMD MARKING CODE zh transistor smd ZH 10 PIMC31 transistor smd code marking 431 transistor smd marking 431.k transistor smd marking 431 PIMN31 TRANSISTOR SMD MARKING CODE 04 SC74 marking 345
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PIMC31 OT457 SC-74) PIMN31 AEC-Q101 PIMC31 transistor smd ZH TRANSISTOR SMD MARKING CODE zh transistor smd ZH 10 transistor smd code marking 431 transistor smd marking 431.k transistor smd marking 431 PIMN31 TRANSISTOR SMD MARKING CODE 04 SC74 marking 345 | |
SMD MARKING CODE 4E
Abstract: marking code 4e smd TRANSISTOR code marking 2007
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PIMN31 OT457 SC-74) AEC-Q101 PIMN31 771-PIMN31115 SMD MARKING CODE 4E marking code 4e smd TRANSISTOR code marking 2007 | |
DIN 6784
Abstract: SOT363 Marking 1B BCR198W
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BCR198. BCR198S: BCR198/F/L3 BCR198T/W BCR198S EHA07183 EHA07173 BCR198 BCR198F BCR198L3 DIN 6784 SOT363 Marking 1B BCR198W |