TRANSISTOR K 135 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1116/A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR „ DESCRIPTION Complement to UTC 2SD1616/A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1116L-x-T92-B 2SB1116G-x-T92-B 2SB1116L-x-T92-K 2SB1116G-x-T92-K

Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1F4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with AN1F4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with AN1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1L4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with AA1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

d1616

Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1A4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with AN1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1F4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with AN1F4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BN1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with BA1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BA1F4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with BN1F4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BA1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with BN1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BN1F4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with BA1F4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with AN1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

BA1A4Z

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BA1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BA1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with AA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1L4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with AA1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

D1359

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BN1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with BA1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

D1617

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BA1F4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with BN1F4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

431.K

Abstract: transistor smd marking 431 transistor smd code marking 431 transistor smd marking 431.k 431 SMD CODE MARKING 431 TRANSISTOR smd marking code 4e PIMN31 transistor smd code marking 420 TRANSISTOR SMD MARKING CODE
Contextual Info: PIMN31 500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 500 mA, 50 V NPN/NPN double Resistor-Equipped Transistor RET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

SMD MARKING CODE 4E

Abstract: marking code 4e smd TRANSISTOR code marking 2007
Contextual Info: PIMN31 500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 500 mA, 50 V NPN/NPN double Resistor-Equipped Transistor RET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

BCR133

Abstract: BCR133F BCR133L3 SEMH11
Contextual Info: BCR133./SEMH11 NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching

PDTA115TT

Abstract: PDTC115TT 13505
Contextual Info: PDTC115TT NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = open Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description NPN resistor-equipped transistor. PNP complement: PDTA115TT. 1.2 Features • Built-in bias resistor

PDTA144E

Abstract: PDTA144ES PDTA144 PDTA144EE
Contextual Info: PDTA144E series PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k Rev. 8 — 14 November 2011 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET family in Surface-Mounted Device (SMD) plastic packages.