TRANSISTOR JSW 12 Search Results
TRANSISTOR JSW 12 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 | Rochester Electronics LLC | BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| ICL7667MJA | Rochester Electronics LLC | ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| 93L422ADM/B | Rochester Electronics LLC | 93L422A - 256 x 4 TTL SRAM |
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| 54F151/BEA | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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TRANSISTOR JSW 12 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: • TqsqgB? ongflbo? q SCS-THOMSON BUR20 Rfflmg^omLioir^oin ! S 6 S-THQMSON 3QE I> HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR ADVANCE DATA HIGH CURRENT HIGH SWITCHING SPEED HIGH POWER GOOD SOA GOOD RBSOA INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The BUR20 is a silicon multiepitaxial planar NPN |
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bur20300ns10mhz | |
transistor JSW
Abstract: jSw Diode
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mg200q1us51transistor jswjsw diode | |
TRANSFORMER bck 03
Abstract: transistor JSW 07 OP295
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0p-295/0p-495op-29514-leadtransformer bck 03+2 | |
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Contextual Info: TOSHIBA MG15Q6ES50A m r; 1 = ; n f i F ^ n i TOSHIBA GTR MODULE • ■ Mr SILICON N CHANNEL IGBT la r ta «v v m ■ HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance 6 IGBTs Built Into 1 Package. |
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mg15q6es50a961001eaa1tjs125 | |
jSw DiodeContextual Info: T O SH IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage |
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mg300q2ys50961001eaa1jsw diode | |
transistor JSW
Abstract: toshiba srf
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mg200q2ys50transistor jswtoshiba srf | |
transistor JSW
Abstract: diode JSW FL 576-K125
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6di30m-050e82988l95t/r89shl50+3 | |
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Contextual Info: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.) |
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mg200q2ys50tjs125 | |
BA4904A
Abstract: AV011 av033 BA3906
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ba3902ba3904aba3906sip-m12+3 | |
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Contextual Info: r r u TECHNOLOGY n m _ 1A High Voltage, Efficiency i o » Switching Voltage Regulator F€flTUR€S DCSCRIPTIOn • Wide Input Voltage Range: 3V to 75V ■ High Switch Voltage: 100V ■ Low Quiescent Current: 4.5mA ■ Internal 1A Switch ■ Shutdown Mode Draws Only 120pA Supply Current |
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120pat0-220lt1072lt1082+1 | |
AN4001
Abstract: laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier
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an4001mrf151a12mhzlaser diode spice model simulation+8 | |
ic 7485 4 bit comparator
Abstract: 16 bit comparator using 74*85 IC CD40298 Ic 7485 comparator function table CD45858 transistor JSW
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schs091cd4585b20-voltcd45858+5 | |
HSML-2822
Abstract: varactor diode model in ADS Limiter PIN diode ADS model hsml5822 PIN diode ADS model varactor diode in p-n junction in ads ADS varactor diode hsms2820 limiter zero bias schottky diode 2GHz transistor JSW
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hsmp382x10agilent11agilentav02-2139en+10 | |
tc6105
Abstract: 2SK679 BH rn transistor 10285 TC-6105
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2sk679tc-6105tc6105bh rn transistor+1 | |
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low noise Microphone Preamplifier
Abstract: SSM2135
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ssm-2135ssm2135low noise microphone preamplifier | |
Amplitude Modulation using tractor diode
Abstract: RS1016 PMI PM7528 transistor de audio fp 1016 transistor audio fp 1016 PM-7528 BF253 electret condenser microphone preamplifier professional microphone preamp SSM2135
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ssm2135ssm-2135volt75e2000e+10 | |
BTS5460SF
Abstract: GPS01089 JESD51-2
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bts5460sfgps01089jesd51-2 | |
differential electret condenser microphone preamp
Abstract: transistor JSW 12 SSM2135
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ssm2135ssm-2135differential electret condenser microphone preamptransistor jsw 12 | |
transistor JSW 12
Abstract: Sonic Drive SSM2135
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ssm2135ssm-2135transistor jsw 12sonic drive | |
BTS5480SF
Abstract: GPS01 bts5480 jsw marking GPS01089 JESD51-2 DSA0096557 transistor JSW 12
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bts5480sfgps01bts5480jsw marking+4 | |
transistor JSWContextual Info: □ ANALOG DEVICES LowNoise, LowDrift Single-Supply Operational Amplifiers OP-113/0P-213/0P-413* FEATURES Single- or Dual-Supply Operation Low Noise: 4.7 n V /V R z @ 1 kHz Wide Bandwidth: 3.4 MHz Low Offset Voltage: 100 jjlV Very Low Drift: 0.2 |xV/°C Unity Gain Stable |
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op-113/0p-213/0p-413op-11353e16op113+1 | |
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Contextual Info: C 2 î ¡992 ANALOG ► DEVICES Low Noise, Low Drift Single-Supply Operational Amplifier OP-213* PIN CONNECTIONS FEATURES Single or Dual Supply Operation Low Noise: 5 n V /V H z @ 1 kHz Wide Bandwidth: 3.4 MHz Low Offset Voltage: 100 jj.V Very Low Drift: 0.2 nV/°C |
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op-213p-21353e16 | |
GPS01089
Abstract: DCPWM JESD51-2
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bts6460sfgps01089dcpwmjesd51-2 | |
BTS6480SF
Abstract: PSH5 SPI pwm generator transistor mj 4035 GPS01089 JESD51-2
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bts6480sfpsh5spi pwm generatortransistor mj 4035+2 | |