TRANSISTOR JFET Search Results

jfet transistor

Abstract: lovoltech PWRLITE-LS201N J-FET TRANSISTOR jfet power transistor LS201N 5A JFET lovoltech no diode
Contextual Info: www.Lovoltech.com PWRLITE-LS201N N-Channel Power JFET Transistor for Notebook Battery Applications Features Applications Description The JFET transistor from Lovoltech is an ideal switch for battery operated products. The device presents a Low Rdson allowing for

NTE132

Abstract: N-Channel JFET transistor
Contextual Info: NTE132 Silicon N–Channel JFET Transistor VHF Amplifier, Mixer Absolute Maximum Ratings: TA = +25°C unless otherwise specified Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

AN211A

Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
Contextual Info: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide

2N3797

Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
Contextual Info: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide

MMBFU310LT1

Abstract: MMBFU310LT1G
Contextual Info: MMBFU310LT1 Preferred Device JFET Transistor N−Channel Features • Pb−Free Package is Available http://onsemi.com 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current

transistor m6e

Abstract: m6e marking code MARKING JW SOT-23 MMBF5460LT1G jw sot23 marking jw MMBF5460LT1 JW SOT-23 jw sot23-3
Contextual Info: MMBF5460LT1 JFET − General Purpose Transistor P−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Gate Voltage VDG 40 Vdc Reverse Gate−Source Voltage VGSR 40 Vdc IGF 10 mAdc

m6c marking code

Abstract: MMBFU310LT1G M6C sot-23
Contextual Info: MMBFU310LT1G JFET Transistor N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage

SFF4393A2GW

Contextual Info: SFF4393A2GW Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Dual Microminiature Package 50 mA 40 Volts Dual N-Channel JFET Transistor DESIGNER’S DATA SHEET

MMBF4416LT1

Abstract: MMBF4416LT1G FR 220
Contextual Info: MMBF4416LT1 Preferred Device JFET VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage

MMBF5460LT1

Contextual Info: ON Semiconductort JFET - General Purpose Transistor MMBF5460LT1 P–Channel 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit PD 225 mW 1.8

MMBF5486LT1

Abstract: 318C8 marking gfg 6f
Contextual Info: MOTOROLA Order this document by MMBF5486LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N-Channel 2 SOURCE MMBF5486LT1 M o to ro la P re fe rre d D e vic e MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Symbol

ld1014d

Abstract: Lovoltech pn diode POWERJFET
Contextual Info: PWRLITE LD1014D High Performance N-Channel POWERJFETTM with PN Diode Features Description ™ ™ ™ ™ ™ ™ ™ The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET — General Purpose Transistor MMBF5457LT1 N—Channel 2 s o u rc e MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating Vd S 25 Vdc Drain-Gate Voltage Vd G 25 Vdc v GS r 25 Vdc Ig 10 mAdc Symbol Max Unit

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

PJ99

Contextual Info: AL L E G R O M I C R O S Y S T E M S 8 5 1 4 0 19 SP RAGUE. INC <13 D • Q5D433Ö Q G D 3 S Ö M 1 ■ ALGR 93 D 0 3 5 8 4 DT^Z-Ÿ-ZS S E M I C O N D S / ICS JUNCTION FIELD-EFFECT TRANSISTOR CHIPS P-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C

AN8610

Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET KAPPA RELAY HIP0061 HIP0061AS1 HIP0061AS2 MO-169AC relay spice model
Contextual Info: HIP0061 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array December 1997 Features Description • Three 3.5A Power MOS N-Channel Transistors The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transistors connected in a common source configuration. The

cascode miller capacitance

Contextual Info: Audio Dual Matched NPN Transistor SSM-2210 A N A LO G D E V IC E S FEATURES • • • • • • • Very Low Voltage N o is e @ 100Hz, In V /V H z MAX Excellent Current Gain M a tc h .0.5% TYP Tight VBE Match VQS . 200^V MAX

Contextual Info: LS5907 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The LS5907 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications

Contextual Info: 2N5908 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The 2N5908 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications

u406

Contextual Info: U401 - U406 LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES LOW DRIFT │VGS1-2/T│= 10µV/ºC TYP. LOW NOISE en=6nV/Hz@10Hz TYP. LOW PINCHOFF VP=2.5V TYP. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C unless otherwise noted Maximum Temperatures

Contextual Info: LS5908 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The LS5908 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications

ultra low Ciss jfet

Contextual Info: 2N5907 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The 2N5907 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications

2n5905

Contextual Info: 2N5905 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The 2N5905 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications