TRANSISTOR IR 944 Search Results

TCRT5000 sensor circuit

Abstract: reflective ir Telefunken Phototransistor TCRT5000 reflective Opto-Sensor CE96 tcrt5000 footprint
Contextual Info: TCRT5000 Reflective Optosensor with Transistor Output Description The TCRT5000 has a compact construction where the emitting-light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object.

TCRT5000

Abstract: d1202 transistor TCRT5000L transistor d1202 D1202 Telefunken Phototransistor Opto-Sensor reflective Opto-Sensor tcrt5000 footprint
Contextual Info: TCRT5000 L Reflective Optosensor with Transistor Output Description The TCRT5000(L) has a compact construction where the emitting-light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object.

TCRT5000

Abstract: tcrt5000 footprint TCRT5000L TCRT5000 sensor circuit Telefunken Phototransistor 340005
Contextual Info: TCRT5000 L Vishay Telefunken Reflective Optical Sensor with Transistor Output Description The TCRT5000(L) has a compact construction where the emitting-light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object.

tcrt5000 footprint

Abstract: TCRT5000
Contextual Info: TCRT5000 L Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description The TCRT5000(L) has a compact construction where the emitting-light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object.

TCRT5000

Abstract: TCRT5000L Reflective Optical Sensor reflective ir
Contextual Info: TCRT5000 L Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description The TCRT5000(L) has a compact construction where the emitting-light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object.

tcrt5000 footprint

Abstract: TCRT5000 sensor circuit
Contextual Info: TCRT5000 L Vishay Telefunken Reflective Optical Sensor with Transistor Output Description The TCRT5000(L) has a compact construction where the emitting-light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object.

1w5301

Abstract: 1n414b AN-944 1W530 high voltage gate drive transformer IC not gate data sheet DS0026 IRF130 AN944 transistor bipolar superficial
Contextual Info: Application Note AN-944 Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs Table of Contents Page 1. Input behavior of a MOS-gated transistor . 1 2. Test Circuit. 1

1n414b

Abstract: 1w5301 free IR circuit diagram transistor IR 944 AN-944 DS0026 IRF130 AN944 IR igbt gate driver ic chips vacuum tube amplifier
Contextual Info: Index AN-944 v.Int Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs Topics covered: • • • • • 1. Background Test method How to interpret the gate charge curve How to estimate switching times How to compare different devices

1w5301

Abstract: 1n414b 5V GATE TO SOURCE VOLTAGE MOSFET 1n414b diode free IR circuit diagram 100 microfarad 20v capacitor not gate 1 microfarad capacitor AN-944 10 microfarad capacitor
Contextual Info: AN-944 v.Int Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs Topics covered: • • • • • 1. Background Test method How to interpret the gate charge curve How to estimate switching times How to compare different devices

irf 345

Abstract: IRG4PC60F irf 44 n IGBT 600V 30A TO-3P
Contextual Info: PD - 94442A IRG4PC60F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.

Contextual Info: PD - 94440A IRG4PC60F-P Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.

AN-994

Abstract: IRG4PC60F-P 60A 150V IGBT
Contextual Info: PD - 94440A IRG4PC60F-P Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.

Contextual Info: PD - 94442A IRG4PC60F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.

Contextual Info: M S Ic k S í application noií 944-1 ,'-'J • ¿? ' - I-'.Í-.T . ' 1'.• . -,. - r*— . . ■*- . ■ r i' : , r • " 5 -„v ; : ■ ~ .-, . '7 V _,/ .-. ‘ ¡.V rV ■: >• ■■■ ■. , - Microwave Transistor Bias Considerations iv iin rn iA /a u p ira n s K T n r

igbt 400V 20A

Abstract: IRG4PC60U ic MARKING QG
Contextual Info: PD - 94443 IRG4PC60U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast Speed IGBT C • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.

IRG4PC60U

Contextual Info: PD - 94443 IRG4PC60U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast Speed IGBT C • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.

AN-994

Abstract: IRG4PC60U-P power supply for igbt driver to247 pcb footprint
Contextual Info: PD - 94441 IRG4PC60U-P INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching and >200 kHz in resonant mode. • Application in UPS, Welding and High Current power

ic MARKING QG

Abstract: AN-994 IRG4PC60U-P
Contextual Info: PD - 94441 IRG4PC60U-P INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching and >200 kHz in resonant mode. • Application in UPS, Welding and High Current power

Contextual Info: PD - 94441 IRG4PC60U-P INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching and >200 kHz in resonant mode. • Application in UPS, Welding and High Current power

IRG4PC60F

Abstract: igbt 40a 600v 60A 150V IGBT
Contextual Info: PD - 94442 IRG4PC60F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.

TO-247AC Package igbt

Abstract: AN-994 IRG4PC60F-P 60A 150V IGBT
Contextual Info: PD - 94440 IRG4PC60F-P Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.

BLX92A

Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
Contextual Info: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

IRG4PC60F

Abstract: 60A 150V IGBT
Contextual Info: PD - 94442 IRG4PC60F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.

AN-994

Abstract: IRG4PC60F-P 60A 150V IGBT
Contextual Info: PD - 94440 IRG4PC60F-P Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.