TRANSISTOR IC 4A DATASHEET NPN Search Results

KSD5072

Contextual Info: KSD5072 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATION DAMPER DIODE BUILT IN TO-3PF • High Collector-Base Voltage (VCBO=1500V) • High Switching Speed (tF. max=0.4µs) ABSOLUTE MIXIMUM RATING Characteristic Collector Base Voltage

TRANSISTOR MJD122

Abstract: TRANSISTOR tip122 MJD122 TIP122 NPN Transistor 8A
Contextual Info: MJD122 NPN SILICON DARLINGTON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I. PACK, “ - I “ Suffix) • Electrically Similar to Popular TIP122

MJD112

Contextual Info: MJD112 tm NPN Silicon Darlington Transistor Features • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications No Suffix Equivalent Circuit C B D-PAK 1 1.Base 2.Collector R1 3.Emitter R2 R1 ≅ 10kΩ R2 ≅ 0.6kΩ

Darlington NPN Silicon Diode

Contextual Info: MJD112 tm NPN Silicon Darlington Transistor Features • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Equivalent Circuit C B D-PAK 1 1.Base 2.Collector R1 3.Emitter R2 R1 ≅ 10kΩ R2 ≅ 0.6kΩ

transistor H 802

Abstract: 702 TRANSISTOR npn 702 P TRANSISTOR obsolete ic cross reference 702 Fairchild
Contextual Info: MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor

Contextual Info: KSC5024 NPN Silicon Transistor • High Voltage and High Reliabilty • High Speed Switching • Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Symbol VCBO Collector-Base Voltage Ta = 25°C unless otherwise noted Parameter Ratings

KSC5024

Abstract: SC-65
Contextual Info: KSC5024 NPN Silicon Transistor • High Voltage and High Reliabilty • High Speed Switching • Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Symbol VCBO Collector-Base Voltage T a = 25°C unless otherwise noted Parameter Ratings

NPN Transistor 1500V 20a

Contextual Info: KSD5707 KSD5707 High Voltage Color Display Horizontal Deflection Output • High Collector - Base Voltage : VCBO = 1500V • High Speed Switching tF = 0.4µs Max. TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

transistor H 802

Contextual Info: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor

solenold

Contextual Info: KSE5740/5741/5742 KSE5740/5741/5742 High Voltage Power Switching In Inductive Circuits • • • • • • High Voltage Power Darlington TR Small Engine lgnition Switching Regulators Inverters Solenold and Relay Drivers Motor Control TO-220 1 1.Base NPN Silicon Darlington Transistor

MJE800

Abstract: TRANSISTOR S 802 MJE800/801/803 equivalent
Contextual Info: MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor

KSE3055

Contextual Info: KSH3055 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATONS D-PACK FOR SURFACE MOUNT APPLICATIONS D-PAK • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I. PACK, “ -I “ Suffix) • Electrically Similar to Popular KSE3055

mje3055

Abstract: mje3055 data transistor MJE3055 MJD3055
Contextual Info: MJD3055 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATONS DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I. PACK, “ -I “ Suffix) • Electrically Similar to Popular MJE3055

MJE3055T

Abstract: MJE305
Contextual Info: MJE3055T NPN SILICON TRANSISTOR GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES TO-220 • High Current Gain-Bandwidth Product fT = 2kHz (MIN ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector-Emitter Voltage

702 TRANSISTOR

Abstract: kse800
Contextual Info: KSE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complement to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic

MJE3055TTU

Contextual Info: MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

KSE3055T

Contextual Info: KSE3055T KSE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: MJE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 I C= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complement to MJE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic

transistor k 702

Abstract: TRANSISTOR S 802 kse800
Contextual Info: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor

TRANSISTOR tip122

Abstract: QS 100 NPN Transistor MJD122 MJD127 TIP122 darlington transistor NPN tip122 npn
Contextual Info: MJD122 NPN Silicon Darlington Transistor Features • • • • • • Equivalent Circuit D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications Electrically Similar to Popular TIP122

Contextual Info: MJD122 NPN Silicon Darlington Transistor Features • • • • • • Equivalent Circuit D-PAK for SurfaceMount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications Electrically Similar to Popular TIP122

Contextual Info: KSC5024 KSC5024 High Voltage and High Reliabilty • High Speed Switching • Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 800

BDX33 application notes

Abstract: bdx33c bdx33
Contextual Info: BDX33/A/B/C BDX33/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX34/34A/34B/34C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

SOT89 transistor marking 4A

Abstract: FJC1386 FJC2098 SOT89 MARKING CODE B2 camera strobe flash
Contextual Info: FJC2098 NPN Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC1386 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 2 0 9 8 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter