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    TRANSISTOR H5551 Search Results

    TRANSISTOR H5551 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    TRANSISTOR H5551 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    H5551

    Abstract: 625MW transistor H5551
    Contextual Info: N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5551 █ AMPLIFIER TRANSISTOR Collector-Emitter Voltage:Vceo=160V. CollectorDissipation:Pc max =625mW █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃


    Original     		H5551 625mW 10AIC 100MHz H5551 625MW transistor H5551 PDF

    transistor 5551

    Abstract: H5551 2N5551
    Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 5551 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C043BJ-01 芯片厚度：240±20µm 管芯尺寸：430x430µm 2 焊位尺寸：B 极 107×107µm2，E 极 101×101µm2


    Original     		100mm C043BJ-01 2N5551H5551 625mW 600mA 120VIE 10mAIB 50mAIB transistor 5551 H5551 2N5551 PDF

    transistor 5551

    Abstract: C046AJ-00 H5551 2N5551 PC625 2N5551H5551
    Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 5551 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C046AJ-00 芯片厚度：240±20µm 管芯尺寸：460x460µm 2 焊位尺寸：B 极 110×110µm 2；E 极 110×110µm 2


    Original     		100mm C046AJ-00 2N5551H5551 625mW 600mA 120VIE 10mAIB 50mAIB transistor 5551 C046AJ-00 H5551 2N5551 PC625 2N5551H5551 PDF