TRANSISTOR FT 960 Search Results

Contextual Info: CD00001880 Rev 7.2 IN APPROVAL PAGE A ft RF power transistor the LdmoST family -D ra Technical Literature Alternate Identifier s Key process 6733 Product Development Dr ISO Definition aft CUSTOM ATTRIBUTES ft - Confidentiality Level Specification Public Technical Literature

Contextual Info: Part Number: Integra IB0912M600 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M600 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing

Contextual Info: Part Number: Integra IB0912M350 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M350 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing

Contextual Info: Part Number: Integra IB0912M500 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M500 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing

Contextual Info: Part Number: Integra IB0912L70 TECHNOLOGIES, INC. L-Band JTIDS 70W Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912L70 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under 444x 7us on,

bd 142 transistor

Contextual Info: Part Number: Integra IB0912L200 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band JTIDS Transistor Class C Operation − High Efficiency The high power pulsed transistor device part number IB0912L200 is designed for systems operating over the instantaneous bandwidth of

nec 2532

Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain

BN1A4M

Abstract: un8h 5942
Contextual Info: - J - 57 . C / -tt^ê* h ~7 C om po und Transistor BN1 A 4 M m tte m ft PNP X e m $ W IU ^ -fô : m m * O s < 4 7 X í É í ñ ; £ F í3 j l L - 0 ' ¿ 1 ' o (R i = o B A I A 4 M 10 t k Q , R 2 = 10 k Q ) =¡ > 7 ° U t ( T a n =

MRF860

Abstract: 2n2222 npn transistor 2N2222 rf
Contextual Info: Order this data sheet by MRF860/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M RF860 NPN Silicon RF Power lYansistor Motorola Preferred Device CLASS A 800-960 MHz 13.7 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier

C200H-DA004

Abstract: CS1W-MD292 TRANSISTOR GUIDE DRT1-TS04P OC224
Contextual Info: ORDERING GUIDE PRODUCT PERFORMANCE STANDARDS OMRON devices that comply with EC Directives also conform to the related EMC standards so that they can be more easily built into other devices or the overall machine. The actual products have been checked for conformity to

ic ca 747

Contextual Info: ERICSSON ^ PTB 20189 1 Watt, 900-960 MHz Cellular Radio RF Power Transistor D escription The 20189 is an NPN, com mon em itter RF power transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP

TRANSISTOR JG 92

Abstract: IFR 730
Contextual Info: H * m iG TU&Q rni 1 40 Commerce Drive Montgomeryville, PA 18936-1013 Tel: 215 631-9840 S D 1 4 9 5 - 3 RF & MICROWAVE TRANSISTORS 9Ö0-960MHZ CLASS C, BASE STATIONS • ■ ■ ■ . . ■ CLASS C TRANSISTOR FREQUENCY VOLTAGE POWER OUT POWER GAIN EFFICIENCY

transistor ft 960

Abstract: IC 7108
Contextual Info: ERICSSO N 0 PTB 20177 150 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20177 is a class AB, NPN. com mon em itter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP

HAT1058C

Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,

TRANSISTOR LC80

Contextual Info: Wireless Power Transistor M a PH0810-60 60 Watts, 850-960 MHz Features • • • • • Outline Drawing Designed for Linear Amplifier Applications Class AB: -32dBc Typ 3rd IMD at 60 Watts PEP Common Emitter Configuration Internal Input Impedance Matching

2SC959

Abstract: 2sc960 C959 2SA606 2SA607 transistor ft 960 2116 2SC999
Contextual Info: 2SA606, 607/2SC 959, 960 2SA606, 607/2SC959, 960 PNP/NPN x e 9 * > 7 y a v h 9 V '✓7.9 / P N P / N P N SILICON EP IT A X IA L TRANSISTOR f â H S iî l Î B f f l / A u d io Frequency Amplifier « « ./F E A T U R E S ♦ »»8 /PACKAGE DIMENSIONS lUmtmml

Contextual Info: PHOTOELECTRIC SENSOR DIGITAL FIBER SENSOR FX-305 Highest level of stability and sensing performance! Conforming to EMC Directive Stable sensing over long and short periods ● Stable sensing comparison Short-term stability Light emitting amount In addition to a ‘four-chemical emitting

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D bbS3^3i oos'jmb DIE IAPX BLV93 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile

NTE124

Abstract: 325V
Contextual Info: NTE124 Silicon NPN Transistor High Voltage Power Output Description: The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switching, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters,

SUS603

Abstract: DPH-L100 DPC-L100 panasonic sensor ce dp transistor k 3562 sunx dp 80
Contextual Info: Head-separated•Dual display For gas & liquid DIGITAL PRESSURE SENSOR Controller DPC-L100 SERIES Sensor head DPH-L100 SERIES Conforming to EMC Directive Powerful and Simple High-precision detection of fluid and air pressure 2011.01 panasonic-electric-works.net/sunx

Contextual Info: SGS-THOMSON S D 1 5 2 8 -0 6 itL iC T M O tê f RF & M I C R O W A V E T R A N S I S T O R S A V IO N IC S A P P LIC A TIO N S DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 20 W typ. IFF 1030 - 1090 MHz 15 W (min.) DME 1025 - 1150 MHz 15 W (typ.) TACAN 960 - 1215 MHz

Contextual Info: Programmable Controller FP7 SERIES Conforming to EMC Directive except AFPRP2□ Seven Steps to Higher Efficiency All about efficiencies for your manufacturing 2014.02 panasonic.net/id/pidsx/global FP7 features Security & reliability Local & remote connectivity

Contextual Info: S G S -T H O M S O N SD1398 ;U RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS 850 - 960 MHZ 24 VOLTS COMMON EMITTER OVERLAY GEOMETRY GOLD METALLIZATION P o u t = 6.0 W MIN. WITH 10.0 dB GAIN PIN CONNECTION 1 n O O DESCRIPTION The SD1398 is a gold metallized epitaxial silicon

transistor smd 12p

Abstract: transistor 12p smd smd transistor at t21 transistor smd t21 smd transistor 12p smd transistor 2x5 B7 smd transistor BLT81 transistor ft 960 smd 12p
Contextual Info: Philips Semiconductors ^ 711Dfi5b D0b^3flg P12 BlPHIN Product specification UHF power transistor BLT81 QUICK REFERENCE DATA FEATURES RF performance at Ts < 60 °C in a common emitter test circuit note 1 . • SMD encapsulation MODE OF OPERATION f (MHz) CW class-B, narrow band