TRANSISTOR FT 960 Search Results

Contextual Info: CD00001880 Rev 7.2 IN APPROVAL PAGE A ft RF power transistor the LdmoST family -D ra Technical Literature Alternate Identifier s Key process 6733 Product Development Dr ISO Definition aft CUSTOM ATTRIBUTES ft - Confidentiality Level Specification Public Technical Literature

Contextual Info: Part Number: Integra IB0912M600 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M600 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing

Contextual Info: Part Number: Integra IB0912M350 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M350 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing

Contextual Info: Part Number: Integra IB0912M500 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M500 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing

Contextual Info: Part Number: Integra IB0912M210 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M210 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing

Contextual Info: Part Number: Integra IB0912M70 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M70 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing

Contextual Info: Part Number: Integra IB0912L30 TECHNOLOGIES, INC. Avionics Broadband 30W Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912L30 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under 450us-15%

Contextual Info: Part Number: Integra IB0912L70 TECHNOLOGIES, INC. L-Band JTIDS 70W Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912L70 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under 444x 7us on,

bd 142 transistor

Contextual Info: Part Number: Integra IB0912L200 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band JTIDS Transistor Class C Operation − High Efficiency The high power pulsed transistor device part number IB0912L200 is designed for systems operating over the instantaneous bandwidth of

nec 2532

Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain

Contextual Info: Part Number: Integra IB1012S500 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB1012S500 is designed for systems operating over the instantaneous bandwidth of 1025-1150 MHz. While operating in class C mode under DME pulsing

high power transistor 6 GHz

Abstract: transistor package
Contextual Info: BIPOLARICS INC. Part Number BPT23B06-23 SILICON MICROWAVE POWER TRANSISTOR Package 23: 0.230" 2 Lead Flange FEATURES: • P = 6 W @ 2.3 GHz • High Gain out GPE = 8.0 dB @ 2.3 GHz • High Gain Bandwidth Product ft = 6.5 GHz @ IC = 480 mA • High Reliability

BN1A4M

Abstract: un8h 5942
Contextual Info: - J - 57 . C / -tt^ê* h ~7 C om po und Transistor BN1 A 4 M m tte m ft PNP X e m $ W IU ^ -fô : m m * O s < 4 7 X í É í ñ ; £ F í3 j l L - 0 ' ¿ 1 ' o (R i = o B A I A 4 M 10 t k Q , R 2 = 10 k Q ) =¡ > 7 ° U t ( T a n =

MRF860

Abstract: 2n2222 npn transistor 2N2222 rf
Contextual Info: Order this data sheet by MRF860/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M RF860 NPN Silicon RF Power lYansistor Motorola Preferred Device CLASS A 800-960 MHz 13.7 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier

C200H-DA004

Abstract: CS1W-MD292 TRANSISTOR GUIDE DRT1-TS04P OC224
Contextual Info: ORDERING GUIDE PRODUCT PERFORMANCE STANDARDS OMRON devices that comply with EC Directives also conform to the related EMC standards so that they can be more easily built into other devices or the overall machine. The actual products have been checked for conformity to

tp3026

Abstract: transistor ft 960
Contextual Info: 12E D I b3fc,?2S4 MOTOROLA SC QOflflESÖ XSTRS/R 3 | F t 1 33-11 MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3026 Advance Inform ation The RF Line UHF P o w e r T ran sisto r 25 W — 960 M Hz UHF POWER TRANSISTOR The TP3026 is specifically designed fo r operation as the final stage in 960 M Hz mobile

ic ca 747

Contextual Info: ERICSSON ^ PTB 20189 1 Watt, 900-960 MHz Cellular Radio RF Power Transistor D escription The 20189 is an NPN, com mon em itter RF power transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP

TRANSISTOR JG 92

Abstract: IFR 730
Contextual Info: H * m iG TU&Q rni 1 40 Commerce Drive Montgomeryville, PA 18936-1013 Tel: 215 631-9840 S D 1 4 9 5 - 3 RF & MICROWAVE TRANSISTORS 9Ö0-960MHZ CLASS C, BASE STATIONS • ■ ■ ■ . . ■ CLASS C TRANSISTOR FREQUENCY VOLTAGE POWER OUT POWER GAIN EFFICIENCY

transistor ft 960

Abstract: IC 7108
Contextual Info: ERICSSO N 0 PTB 20177 150 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20177 is a class AB, NPN. com mon em itter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP

HAT1058C

Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,

BF960

Abstract: t187 BF-960 BF960 TELEFUNKEN GDDS530 Telefunken u 237 BF 22 W transistor bf 237 BF 606 a0lv
Contextual Info: oc TELEFUNKEN ELECTRONIC V fllC D 6 1 2 0 0 % DDDS530 *i • ALG6 T~3i - Xjr~ ■ miSPMMEN electronic BF 960 Creative Technologies j i N-Channel Dual Gate MOS-Fieldeffect Tetrode >Depletion Mode Applications: Input- and Mixerstages especially for UHFTV-tuners up to 900 MHz

itt 2222

Abstract: tag l9 transistor 2222 030 capacitor philips ITT 2222 A 4312 020 36642 Philips 2222 capacitor electrolytic capacitor 47 capacitor j63 c9 38478 philips ceramic capacitors
Contextual Info: PhHip^emiconductor^^^ _ bbSBIBl 003G12b TD7 H AP X ^Pjoduc^pecjficatjon UHF power MOS transistor ^ BLF544 N AMER P H I L I P S / D I S C R E T E bTE D PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures

TRANSISTOR LC80

Contextual Info: Wireless Power Transistor M a PH0810-60 60 Watts, 850-960 MHz Features • • • • • Outline Drawing Designed for Linear Amplifier Applications Class AB: -32dBc Typ 3rd IMD at 60 Watts PEP Common Emitter Configuration Internal Input Impedance Matching

2SC959

Abstract: 2sc960 C959 2SA606 2SA607 transistor ft 960 2116 2SC999
Contextual Info: 2SA606, 607/2SC 959, 960 2SA606, 607/2SC959, 960 PNP/NPN x e 9 * > 7 y a v h 9 V '✓7.9 / P N P / N P N SILICON EP IT A X IA L TRANSISTOR f â H S iî l Î B f f l / A u d io Frequency Amplifier « « ./F E A T U R E S ♦ »»8 /PACKAGE DIMENSIONS lUmtmml