TRANSISTOR F13 70 Search Results

HM1-65262

Abstract: HM-65262
Contextual Info: HM-65262/883 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil

dynamic ram binary cell

Abstract: A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC
Contextual Info: HS-65647RH TM Data Sheet Radiation Hardened 8K x 8 SOS CMOS Static RAM The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of

TTL TRANSISTOR MODEL PARAMETER

Contextual Info: FEATURES • 9 - 1 0 MHz ■ +13 dBm 0.1 dBm Compression In Thru State ■ +30 dBm 3rd Order Intercept Point ■ 16.5 dB Gain ■ Integrated GaAs M M IC Switches, Attenuators, Silicon Transistor Amplifier, and TTL Drivers RF2 38 J fcË f MODEL NO. CHD01940

sxxxx

Contextual Info: æ H A « « H M - 6 5 2 2 /8 8 3 16K x 1 Asynchronous CMOS Static RAM January 1992 Features • 6 Pinouts This Circuit Is Processed In Accordance to Mtl-Std-883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. HM1-65262/883 CERAMIC DIP

bly89a

Abstract: Transistor bly89a
Contextual Info: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every

T100

Abstract: U6084B U6084B-FP VT100
Contextual Info: Features • • • • • • • Pulse-width Modulation up to 2 kHz Clock Frequency Protection against Short-circuit, Load-dump Overvoltage and Reverse VS Duty-cycle 0 to 100% Continuously Output Stage for Power MOSFET Interference and Damage Protection According to VDE 0839 and ISO/TR 7637/1

Contextual Info: HM-65262/883 S 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Ran­

atmel 028

Abstract: T100 U6084B U6084B-MFPG3Y VT100 820k switched potentiometer
Contextual Info: Features • • • • • Pulse-width Modulation up to 2-kHz Clock Frequency Protection Against Short-circuit, Load-dump Overvoltage and Reverse VS Duty Cycle 0% to 100% Continuously Output Stage for Power MOSFET Interference and Damage Protection According to VDE 0839 and

128X128

Abstract: HM-65262 hm65262
Contextual Info: HM-65262/883 Semiconductor 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Ran­

transistor A6I

Contextual Info: MHS electronic June 1992 HM 65262 HI-REL DATA SHEET_ 16 k x 1 VERY LOW POWER CMOS SRAM FEATURES ACCESS TIME : 70/85 ns . TTL COMPATIBLE INPUTS AND OUTPUTS VERY LOW POWER CONSUMPTION ACTIVE :1 10 mW typ STANDBY : 2.0 uW (typ) DATA RETENTION : 0.8 uW (typ)

OF128

Abstract: HM-65262C-5 65262
Contextual Info: IM III V I M É 9 March 1994 HM 65262 DATA SHEET_ 16 K x1 VERY LOW POWER CMOS SRAM FEATURES . . . . . . ACCESS TIME COMMERCIAL : 70 ns max MILITARY/INDUSTRIAL : 70/85 ns (max) VERY LOW POWER CONSUMPTION ACTIVE: 110 mW(typ) STANDBY : 2.0 fiW (typ)

IC 4093 pin configuration

Abstract: BRY 56 B IC 4093 MARKING 30 5Y SO2894 4392 4392 a ic BCV27 BFR30 BFR31
Contextual Info: micropackaged devices m icroboitiers ^ général purpose and switching transistor selector guide THOMSON-CSF guide de sélection-transistors de com m utation et usage général Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221

spice model three phase TRANSFORMER

Abstract: Spice model xfmr xfmr spice alimentation decoupage spice model 1n4148 Christophe Basso SUBCKT XFMR 1 2 3 4. RP 1 2 1MEG three winding transformer MTD1N60E MUR1100E
Contextual Info: MOTOROLA Order this document by AN1679/D SEMICONDUCTOR APPLICATION NOTE AN1679 How to deal with Leakage Elements in FLYBACK Converters Christophe BASSO, MOTOROLA SPS BP–1029, Le Mirail, 31023 Toulouse France e–mail: R38010@email.sps.mot.com; Tel.: 33 5 61 19 90 12

ipc-16a

Abstract: DS3608 stk 808 c47s ipc 16a lifo stack 256 word 8 bit ScansUX1009 stk power amplifiers JC-14 stk amplifiers
Contextual Info: user benefits PACE features • Simplified pro­ gramming • • • • Simplified I/O design • Common memory and peripheral addressing • Six hardware-vectored priority interrupts 10-word on-chip stack Four control flag outputs Three sense inputs Four I/O control strobe

HS1-65647RH

Abstract: HS1-65647RH-8 HS1-65647RH-Q HS-65647RH HS9-65647RH HS9-65647RH-8 HS9-65647RH-Q HS9A-65647RH-Q
Contextual Info: HS-65647RH Radiation Hardened 8K x 8 SOS CMOS Static RAM August 1995 Features Functional Diagram • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD Si - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10-12 Errors/Bit-Day

CDA10.7

Abstract: Silicon tuner application note PC Tuner AM SW FM IC cda10,7 fm tuner ic TA2159F radio tuner 32 pin
Contextual Info: TA2159F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA2159F FM Synthesizer Tuner TA2159F is the FM synthesizer tuner with built-in FM front end, FM IF/detector, FM stereo decoder, PLL and system microcontroller which is designed for 3 V audio equipment.

ALP 101 modulator

Abstract: 300Hz-3kHz dtx 360 transistor MAS9191A 100mVDC 2.2nf capacitor transistor dtx 360
Contextual Info: DA9191A.000 July 31, 1997 0$6$ 6LQJOH &KLS $036 7$&61$036 $XGLR'DWD 3URFHVVRU • • • • 6LQJOH FKLS VROXWLRQ IRU DOO DXGLR DQG GDWD SURFHVVLQJ /RZ SRZHU FRQVXPSWLRQ ZLWK VHYHUDO SRZHU GRZQ PRGHV 6$7 GHFRGLQJ DQG WUDQVSRQGLQJ FLUFXLWU\ 6LPSOH ZLUH VHULDO LQWHUIDFH

Contextual Info: r= J S G S -T H O M S O N L6201 L6202-L6203 DMOS FULL BRIDGE DRIVER PRELIMINARY DATA • SUPPLY VOLTAG E UP TO 48 V ■ 5A MAX PEAK CURRENT 2A max. for L6201 ■ TOTAL RMS CURRENT UP TO L6201: 1A; L6202: 1.5A; L6203: 4A ■ R ds (o n ) 0.3 f i (typical value at 25 °C)

12A 250v LITTLEFUSE

Abstract: irfs23n15d 48V 2w zener diode SSM1-402E-10T NPN transistor 2n2222 2N2222 NPN Transistor features 2N2222 transistor BZX84C6V2L MBR20100CT MJD340
Contextual Info: Application Note AN 180 Using the X80070 in an Advanced TCA Application Carlos Martinez, 3/5/04 INTRODUCTION X80070 HOTSWAP CONTROL This application note describes one possible implementation of an Advanced TCA PICMG 3.x power supply control. This particular implementation shows the power

1640l

Abstract: JW050A1-E JW050A1-E Lucent IRF530 LT1640H LT1640HCN8 LT1640L F06A diode diode led uv IRF530 application
Contextual Info: Final Electrical Specifications LT1640L/LT1640H Negative Voltage Hot Swap Controller July 1998 U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ The LT 1640L/LT1640H is an 8-pin, negative voltage Hot SwapTM controller that allows a board to be safely inserted

Contextual Info: LT1641-1/LT1641-2 Positive High Voltage Hot Swap Controllers U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1641-1/LT1641-2 are 8-pin Hot SwapTM controllers that allow a board to be safely inserted and removed from a live backplane. Using an external N-channel pass

Contextual Info: LT1641-1/LT1641-2 Positive High Voltage Hot Swap Controllers U FEATURES DESCRIPTIO • The LT 1641-1/LT1641-2 are 8-pin Hot SwapTM controllers that allow a board to be safely inserted and removed from a live backplane. Using an external N-channel pass transistor, the board supply voltage can be ramped up at

16412I

Abstract: 5248B IRF530 LT1641-1 LT1641-2 SMAT70A 2IS8 16411 16411I
Contextual Info: LT1641-1/LT1641-2 Positive High Voltage Hot Swap Controllers U FEATURES DESCRIPTIO • The LT 1641-1/LT1641-2 are 8-pin Hot SwapTM controllers that allow a board to be safely inserted and removed from a live backplane. Using an external N-channel pass transistor, the board supply voltage can be ramped up at

chip die npn transistor

Contextual Info: 700 Series 20V BIPOLAR ARRAY DESIGN MANUAL Last Revision Date: 2 December 2005 The 700 Series Design Manual has been originated and is maintained by Hans Camenzind, Array Design Inc. San Francisco. Feedback is welcome. Array Design offers design assistance