TRANSISTOR ES 8 C36 Search Results

schematic diagram analog tv tuner rca

Abstract: dsc r3918 IC3001 jvc hdd motor c1507 transistor B0ACCK000005 c4060 transistor B3RAD0000092 C1518 transistor C0DACZH00017
Contextual Info: ORDER NO.DSD0503040C2 DVD Video Recorder DMR-EH50EB DMR-EH50EG DMR-EH50EP DMR-EH52EG Vol.1 Colour K .Black Type (S).Silver Type 2005 Matsushita Electric Industrial CO., Ltd. All rights reserved. Unauthorized copying and

transistor 2N1771

Abstract: GE C220B ge c220e scr ge c220d c122d scr ge c220c ob 2268 Ria5 2N1770A C10U
Contextual Info: GETYPE JEDEC C10 C11 C15 C 116 2N 1770A 77A 2N 1770-78 - - 25-400 25-600 25-600 C l 2 2 -3 * C220-2 C126 C36 C37 - - 2 N 1842-50 - 25-600 25 600 ELECTRICAL SPECIFICATIONS | VOLTAGE RANGE i 50-600 25-600 { 25-600 25-800 j 2b I FORWARD CONDUCTION It r m s

AGR19180EF

Abstract: JESD22-A114 Z111A
Contextual Info: AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

IAO5 Sharp

Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Contextual Info: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The

J307 FET

Abstract: J307 transistor c35 equivalent IM335
Contextual Info: Preliminary Data Sheet July 2003 AGR19180E 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19180E is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Contextual Info: P D - 9.1108 bitemational I»»]Rectifier IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600V •Short circuit rated -10ps @ 125°C, V Ge = 15V ’ Switching-loss rating includes all "tail" losses

TOSHIBA 2SA1213Y

Abstract: S8520E50MC E50M 2SA1213Y MA737 IFR7606 c50mcb S-8520B36MC-ARV-T2 seiko 320 240 S-8520
Contextual Info: Rev.7.4_io PWM Control & PWM/PFM Control Step-Down Switching Regulator-Controllers Q_R«9n/ft* 9 i <5 • " eries The S-8520/8521 Series consists of C M O S step-dow n sw itching regulatorcontrollers with P W M -control S-8520 and P W M /P F M -sw itched control (S8521). These devices contain a reference voltage source, oscillation circuit,

J307 FET

Abstract: AGR19180EF JESD22-A114 agere c8
Contextual Info: Preliminary Data Sheet March 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

J307 FET

Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386
Contextual Info: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

c38 transistor

Abstract: PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37
Contextual Info: t m 7110821, D0b31t,4 m BIPHIN Philips Semiconductors_ _ . . bSE T> PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double input and output matching for easy matching and high gain QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.

2SA1763

Abstract: A4-DCA015 C4168 A1753 transistor a1839 A1814 2SA1813 DCF015 2SC4413 2SC4694
Contextual Info: M C P Mini Chip Pack Transistors The package of Sanyo MCP (Mini Chip Pack) transistors is made so sraal1-sized as approximately 2/3 of the CP package heretofore in use, permitting MCP transistor-applied sets to be made smaller, ate V e r y li i g h f r e q u e n c y

IRGPC50S

Contextual Info: PD - 9.694A International [1ÓRRectifier IRGPC50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features c • Switchlng-loss rating includes all “tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve

Contextual Info: International BUlRectifier IRGPC50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT PD - 9.694A Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve

Contextual Info: SA0YO M CP Mini C h i p Pack Transistors The package of Sanyo MCP (Mini Chip Pack) transistors is made so small-sized as approximately 2/3 of the CP package heretofore in use, permitting MCP transistor-applied sets to be made smaller, ole V e i - y h i g h

C3656

Abstract: C4397 c3399 A1678 transistor C4047 c3396 a1343 C3863 A1526 C4396
Contextual Info: Resistance-Contained Transistor F e a t u r e s if On-chip bias resistance •Cx Sma 11-sized package MCP.CP,SPA,NP ☆ Both PNP and NPN types are available. a le I C “ 1 O O m A ( ) : Ma i k i ng on MCP. CP. S e r i A p p i Abso ute Maximum Ratings 2SA1341(BL)/2SC3395(BY)

panasonic rx c39

Abstract: fj series capacitor panasonic ECU-E1E102KBQ murata sfeca 10.7 CE CAPACITOR PANASONIC ERJ2GE0R00 SMD resistors 0402 SFECA smd transistor SOT-23 fj hc49/smd transistor lf
Contextual Info: RF RF2905 Preliminary M ICRO-DEVICES 4 3 3 /8 6 8 /9 1 5 M H Z FM /FSK /A S K /O O K TR A N S C E IV E R T y p ic a l A p p lic a t io n s • Wireless Meter Reading • Wireless Data Transceiver • Keyless Entry Systems • Wireless Security Systems • 433/868/915MHz ISM Band Systems

LM324 SMD

Abstract: LLC resonant full bridge schematic resonant full bridge schematic NCP4303 resonant half bridge schematic 1n5408 smd NCP1397 SMD resistor 01R NCP1605 SMD resistors 2r2
Contextual Info: TND399/D Rev. 0, February-10 216 W All in One Power Supply Reference Design Featuring NCP1605, NCP1397 and NCP4303 Documentation 1 Intellectual Property is conveyed by the transfer of this documentation. This reference design documentation package is provided only to assist

IGBT DRIVER SCHEMATIC 3 PHASE

Contextual Info: Reference Design Gate driver for M40x-M80x Power Modules GD-M40x-80x for NPC Modules Reference Design no.: RD_2014-12_001-v02 Table of Contents 1 In tr o d uc t i o n . 3

antena microondas

Abstract: circuito sensor capacitivo Denso radar sensores capacitivos R2N P1F transistor A5E024 bocina transistor J1F LUT400 SENSORES INDUCTIVOS
Contextual Info: 4 Siemens AG 2014 Medida de nivel 4/2 Sinopsis de productos 4/9 Detección de nivel Sensores capacitivos Medición continua continuación Accesorios para sistemas ultrasónicos 4/185 – Bridas de fijación EA 4/187 – Soportes de montaje FMS 4/189 – Sensor de temperatura TS-3

BFG55A

Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

DSA003127

Abstract: C-38 IRGPC50S IGBT IRGPC50S
Contextual Info: PD - 9.694A IRGPC50S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.6V

pec 632

Abstract: IRGPC50S C-38
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.694A IRGPC50S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve

IRGPC50S

Abstract: C-38 TRANSISTOR ES 8 C36
Contextual Info: PD - 9.694A IRGPC50S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.6V

RJ45 datasheet 8P8C

Abstract: IBM simm 30-pin smd LD9 smd transistor ld3 motorola 30-pin simm memory dynamic 74ACT14D 74ACT74D AMD PCMCIA Flash Memory Card PC MOTHERBOARD CIRCUIT diagram of LG computers LED SMD 1206 INFRA RED
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Motorola Semiconductor Israel Ltd. MICROPROCESSOR & MEMORY Freescale Semiconductor, Inc. CT OR , IN C.2 006 TECHNOLOGIES GROUP MIC ON DU MPC860ADS User’s Manual AR CH IVE DB YF RE ES CA LE SE Board Revision - ENG