TRANSISTOR EQUIVALENT TABLE C101 Search Results

BLF578

Abstract: AN10858 planar transformer theory DVB-T Schematic Transmission-Line Conversion Transformers TIC4000 planar transformer layout ATC800B101GT500X ATC800B471JT200X DVB-T transistor amplifier
Contextual Info: AN10858 174 MHz to 230 MHz DVB-T power amplifier with the BLF578 Rev. 02 — 26 March 2010 Application note Document information Info Content Keywords BLF578, LDMOS, DVB, planar balun Abstract This application note describes the design and performance of a 200 W

STAC244

Abstract: drying oven STAC265F M252 substitution AN3232 C10100 M252 STAC265B seho
Contextual Info: AN3232 Application note Mounting recommendations for STAC boltdown packages Introduction RF power transistors are amongst the highest power density devices in the semiconductor industry. It is crucial to the reliability and performance of such devices to consider

Contextual Info: STEVAL-TDR028V1 RF power amplifier demonstration board based on the STAC2942B Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 370 W min. ■ Gain: 20 dB typ. ■ Efficiency: 77% typ. ■ Harmonics: - 30 dBc max.

stac2942

Abstract: STAC2942B STEVAL-TDR028V1 austerlitz C10100 Solder Paste, Indium 5.8 STAC265B
Contextual Info: STEVAL-TDR028V1 RF power amplifier demonstration board based on the STAC2942B Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 370 W min. ■ Gain: 20 dB typ. ■ Efficiency: 77% typ. ■ Harmonics: - 30 dBc max.

Contextual Info: STEVAL-TDR029V1 RF power amplifier demonstration board based on the STAC2942B Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min ■ Gain: 20 dB typ. ■ Efficiency: 77 % typ ■ Harmonics: - 36 dBc max

stac2942

Abstract: STAC2942B dow corning silicone compound C10100 STAC244 STAC265B "power semiconductor" phillips austerlitz
Contextual Info: STEVAL-TDR029V1 RF power amplifier demonstration board based on the STAC2942B Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min ■ Gain: 20 dB typ. ■ Efficiency: 77 % typ ■ Harmonics: - 36 dBc max

N/A9M07

Contextual Info: Document Number: AFT09MS007N Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N−Channel Enhancement−Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two−way radio applications with frequencies from

FBN-36220

Abstract: FBN-L109 FBT-00-031 IN4002 diode FBL-00-030 lambda transistor fbn FBL-00 FBN36485 FBN-L115 FBN-L102
Contextual Info: INSTRUCTION MANUAL FOR REGULATED POWER SUPPLIES LL SERIES THIS MANUAL APPLIES TO UNITS BEARING SERIAL NO. PREFIXES À-D - 2095 - This manual provides instructions intended for the operation of Lambda power supplies, and is not to be reproduced without the written consent

F35V

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 1, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

MRF6V10010

Abstract: MRF6V10010NR4 KEMET C1206C104K5RACTR AN1955 ATC100B470JT500XT FREESCALE PACKING A113 A114 A115 C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 2, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

transistor equivalent table c101

Abstract: KEMET C1206C104K5RACTR CRCW12063301FKEA MRF6V10010N A03TKlc C1206C104K5RACTR
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 0, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

ATC100B4R7CT500XT

Abstract: transistor j239 j239 transistor equivalent table c101 mosfet mttf A02TKLC MRF6V10250HSR3 A114 A115 AN1955
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 0, 2/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for

A114

Abstract: A115 AN1955 C101 JESD22 MRF6V10250HSR3 C1447-0 nh TRANSISTOR
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 1, 6/2008 NOT RECOMMENDED FOR NEW DESIGN N - Channel Enhancement - Mode Lateral MOSFET MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for

DVB-T Schematic

Abstract: BLF881 C5750X7S2A106M DVB-T acpr AN10945 3T-20 c107 TRANSISTOR equivalent DVB-T transistor amplifier DVB-T 800B
Contextual Info: AN10945 174 MHz to 230 MHz DVB-T power amplifier with the BLF881 Rev. 01 — 18 November 2010 Application note Document information Info Content Keywords BLF881, DVB-T, VHF, ACPR, LDMOS, power amplifier, linearity, efficiency, gain flatness, peak power Abstract

FERRITE BEAD 1000 OHM 0805

Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier

Contextual Info: Document Number: MW6S010 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. RF Power Field Effect Transistor MW6S010MR1

FERRITE BEAD 1000 OHM 0805

Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 2, 5/2006 Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. RF Power Field Effect Transistor MW6S010MR1

zd107

Abstract: zd107 transistor IPB60R199 88EM8041 90w flyback GBL406 LTV817B t101a zener diode cross reference ZD104
Contextual Info: Cover 88EM8040/88EM8041 Power Factor Correction Controller for Flyback Topology Datasheet Customer Use Only Doc. No. MV-S104983-01, Rev. A October 5, 2009 Marvell. Moving Forward Faster Document Classification: Proprietary 88EM8040/88EM8041 Datasheet Document Conventions

TRANSISTOR A104b

Abstract: TRANSISTOR A107 EIAJ ED-4701 305 water pumping machine control schematic electromigration calculation for TTL smd transistor AIT AAAA series SMD transistor schematic diagram atom ED-4701 A103-C
Contextual Info: [ 3 ] Reliability Testing Contents 1. What is Reliability Testing . 1 1.1 Significance and Purpose of Reliability Testing. 1 1.2 1.3 Before Testing . 1

C1694

Abstract: C1663 HVU202 HVU306A pre-amp vhf application uPC1675
Contextual Info: Application Note Usage of 5V Frequency Down-converter IC µPC1694GR Document No. P11065EJ3V0AN00 3rd edition Date Published November 1999 N CP(K) Printed in Japan 1996, 1999 [MEMO] 2 Application Note P11065EJ3V0AN00 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.

MW6S010NR1

Abstract: A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1 MW6S010MR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier

CRCW12061001F100

Abstract: MW6S010NR1 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier

Arlon CuClad PCB board material

Abstract: ATC100B102JT50XT 250GX-0300-55-22 250GX B10T CDR33BX104AKYM 0.1 UF 50V CHIP CAPACITOR ATC200B223KT50XT kemet c1825c225j5rac, 2.2 uf chip cap ATC100B270JT500XT CDR33BX104AKYM
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 2, 8/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with

led lamp INDUCTOR

Abstract: HV831 HV831MG MO-187 MSOP-10 transistor marking CS
Contextual Info: HV831 High Voltage Dual EL Lamp Driver Features General Description ► ► ► ► ► ► ► ► ► The Supertex HV831 is a high voltage driver designed for driving two EL lamps with a combined area of 3.5 square inches. The input supply voltage range is from 2.0 to 5.0V. The device is designed to reduce