TRANSISTOR EQUIVALENT LIST TIP 117 Search Results

TIP110

Abstract: TIP112 TIP111 TIP110 equivalent TIP110 transistor TIP112 transistor NPN Transistor VCEO 80V 100V TIP NPN 112 transistor tip110 transistor tip111
Contextual Info: TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage

Contextual Info: TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage

TIP 152 transistor

Contextual Info: TIP115/116/117 TIP115/116/117 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -1A Min. Low Collector-Emitter Saturation Voltage Industrial Use Complementary to TIP110/111/112

TIP110 equivalent

Contextual Info: TIP110/111/112 TIP110/111/112 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage Industrial Use TO-220

TIP110 equivalent

Abstract: TIP110 TIP111 TIP112 tip 112
Contextual Info: TIP110/111/112 TIP110/111/112 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage Industrial Use TO-220

Transistor Equivalent list tip 117

Abstract: tip117 TRANSISTOR equivalent TIP115 TIP116 TIP117
Contextual Info: TIP115/116/117 TIP115/116/117 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -1A Min. Low Collector-Emitter Saturation Voltage Industrial Use Complementary to TIP110/111/112

tip117

Abstract: TIP116
Contextual Info: TIP115/TIP116/TIP117 PNP Epitaxial Silicon Darlington Transistor • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -1A Min. Low Collector-Emitter Saturation Voltage Industrial Use

tip117 TRANSISTOR equivalent

Abstract: TIP117 TIP115 TIP116 Transistor Equivalent list tip 117 TRANSISTOR TIP117
Contextual Info: TIP115/TIP116/TIP117 PNP Epitaxial Silicon Darlington Transistor • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -1A Min. Low Collector-Emitter Saturation Voltage Industrial Use

Contextual Info: AMD3 SLIC FAMILY FUNCTIONAL DESCRIPTION Two-Wire Interface AMD's SLIC device family has grown and includes de­ vice operating characteristics and options not previ­ ously available. Current offerings also include new choices of power management and DC feed control to

FR-BSF01

Abstract: MR-C10A1 HC-PQ43 MRZJW3-SETUP41E HC-PQ23 MR-C20A MR-TB20 MR-C-T01 SERVO MOTORS DRIVE MITSUBISHI MR-C10A
Contextual Info: A D V A N C E D AN D E V E R A D V A N C .N G A MITSUBISHI SERVO DRIVES & MOTORS MELSERVO-C MITSUBISHI ELECTRIC Small, easy-to-use, high-performance. An extraordinarily compact, intelligent servo. Handy super-com pact size A super-compact size of only 40 millimeters

transistor BU 102S

Abstract: fgt313 stp 10n40 SLA4052 BU 102S c4381 high voltage 3-phase motor driver ic RELAY sz - 2103 12V C5100 MOSFET SLA5096
Contextual Info: SEMICONDUCTORS GENERAL CATALOG 2010 Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China

Contextual Info: Z1 Am79M570/Am79M574 Advanced Micro Devices Metering Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant resistance feed Supports 2.2-V RMS metering 12 and 16 kHz ■ On-chip switching regulator for low-power dissipation

Contextual Info: a Am79M531 /Am79M535 Advanced Micro Devices Metering Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant current feed Ground-key detect ■ Line-feed characteristics independent of battery variations IWo-wIre impedance set by single external

Contextual Info: FINAL a Am79530/Am79531 / Am79534/Am79535 Advanced Micro Devices Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant current feed ■ Ground-key detect ■ Line-feed characteristics independent of battery variations ■ Two-wire impedance set by single external

Contextual Info: a Am79571 / Am79573/Am79574 Advanced Micro Devices Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Program m able constant resistance feed ■ G round-key detect option available ■ Line-feed characteristics independent of battery variations

Si3201-FS

Abstract: Si3201-KS SE 7889 SI3216-FT ISOmodem si3201 SI3201-GS Si3216 BJT 2N2222 datasheet AN3272
Contextual Info: Si3216 P R O SLIC P R O G R A M M A B L E W I D E B A N D SLIC/C O D E C W I T H R I N G I N G / B A T T E R Y V O L TA G E G E N E R A T I O N Features „ „ „ „ Dual-mode wideband 50 Hz to 7 kHz / narrowband (200 Hz to 3.4 kHz) codec with 16-bit 16 kHz sampling for enhanced audio

Contextual Info: Si3215 P R O SLIC P R O G R A M M A B L E CMOS SLIC/C O D E C W I T H R I N G I N G / B A T T E R Y VO L TA G E G E N E R A T I O N Features Performs all BORSCHT functions Software programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft

SI3216-FT

Abstract: 5551 transistor Si3216
Contextual Info: Si3216 P R O SLIC P R O G R A M M A B L E W I D E B A N D SLIC/C O D E C W I T H R I N G I N G / B A T T E R Y V O L TA G E G E N E R A T I O N Features „ „ „ „ Dual-mode wideband 50 Hz to 7 kHz / narrowband (200 Hz to 3.4 kHz) codec with 16-bit 16 kHz sampling for enhanced audio

SE 7889

Abstract: Si3201-KS AN3272 SI3201-FS SI3216-FT Si3216 SI3211 Si321x sot23 mark code KS GR-909
Contextual Info: Si3216 P RO SLIC P R O GRA MM A B LE W IDEBAND SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features     Dual-mode wideband 50 Hz to 7 kHz / narrowband (200 Hz to 3.4 kHz) codec with 16-bit 16 kHz sampling for enhanced audio

SE 7889

Abstract: CTX01-15275 IRLL014N SM76315 2N5551 SOT23 bjt 2n2222 BJT 2N2222 datasheet beta si3210 Si3211 Si321x
Contextual Info: S i 3 2 1 0 / S i 3 2 11 / S i 3 2 1 2 P R O S LI C P R O G R A M M A B L E CMO S SL IC /C O D E C W I T H R I N G I N G / B A T T E R Y V O L TA G E G E N E R A T I O N Applications ro S Programmable Constant Current Feed 20–41 mA Programmable Loop Closure and

SSC9512

Abstract: STR-W6750 B1560 equivalent STRW6252 str3a100 sanken audio modules 24v dc soft start motor control diagram DARLINGTON TRANSISTOR ARRAY strw6053 inverter 12v to 220 ac mosfet based
Contextual Info: Bulletin No O03EH0 （Mar, 2013） Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China

transistor dtx 360 mosfet

Abstract: transistor dtx 360 SI3210-E-FM TRANSISTOR SMD MARKING CODE 2s TRANSISTOR SMD MARKING CODE r28 marking codes transistors sot-223 ON SEMI transistor smd marking codes c9 zetex zetex transistor to92 MARKING SMD PNP TRANSISTOR Y2 bjt 2n2222 fairchild
Contextual Info: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features      Applications    Programmable audio processing DTMF encoding and decoding 12 kHz/16 kHz pulse metering

600w class d circuit diagram schematics

Abstract: TM 1628 IC SCHEMATICS DIAGRAM P6KE200A equivalent 30F126 AP6KE300CA diode P6KE 100 A TISPA79R241 SMBJ40A/CA-TR ZP1400 1SMB5.0CAT3
Contextual Info: ASD and Discrete Products PROTECTION Devices and IPADs™ Improving the Immunity of your System Designer’s Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL

power BJT tip 122

Abstract: Si3201-KS transistor equivalent 2n5551 CTX01-15 coiltronic SI3210M-FM 31353R-02 SI3201-FS si3210-ft SI3210FT
Contextual Info: S i 3 2 1 0 / S i 3 2 11 P R O SLIC P R O G R A M M A B L E CMOS SLIC/C O D E C W I T H R I N G I N G / B A T T E R Y VO L TA G E G E N E R A T I O N Features Performs all BORSCHT functions Software programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft