TRANSISTOR EB 525 Search Results

transistor 1005 oj

Abstract: transistor power rating 5w ATC100A PH3135-5S PIN07
Contextual Info: M tiK O V . J r an A M P com pany Radar Pulsed Power Transistor, 5W, 2^s Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V2.00 . .900 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry

Contextual Info: T O SH IB A 2SD1525 2 S D 1 525 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE D ARLING TO N HIGH CURRENT SW ITCHING APPLICATIONS Unit in mm • • • High Collector Current : Iq = 30A High DC Current Gain : hjrE(l) = 1000 (Min.) Monolithic Construction with Built-In Base-Emitter Shunt

2SD947

Abstract: Q005 2SD947 j Transistor 126m
Contextual Info: ROHN CO K7 > V 7 LTD MDE 7020^=1 D Q00SÖ23 $ / J ransistors 1 HRHN 2SD947 - 7 - Z Z - 2 ? i t 0* * v7 \,-yy—m npn ->•;=\>#-v>b> ‘ S H ^ S ^ ia 'tiffl/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor

TRANSISTOR BC 252

Abstract: BUV56 L05A schematic diagram UPS 15V 5A Power Supply Schematic 380v UPS diagram Scans-007954
Contextual Info: 7^5gS37 P05A771 G • ^ T ' 3 3 - 3 SGS-THOMSON B U V 56 s lü iO T K s K S S G S-THOMSON 3GE D FAST SWITCHING POWER TRANSISTOR ■ SUITABLE FOR SWITCH MODE POWER SUP­ PLY, UPS, DC AND AC MOTOR CONTROL DESC RIPTIO N High voltage, high speed transistor suited for use on

Contextual Info: m 2N6678 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6678 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE T O - 3 INCHES 875 MAX. A MAXIMUM RATINGS B 135 MAX. .2 5 0- 043 DIA. C MILLIMETERS 22.23 MAX.

LT 5251

Abstract: 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564
Contextual Info: SEC j Silicon Transistor 2SB564 P N P X t" 2 * -> 7 J U fi '> 'J □ > h =y > v 7- H PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o { S M M n i± f m y ^ B / P A C K A G E D IM EN SIO N S * Unit : mm ¿ 7 - fc.y v t , 0 2 S D 4 7 1 1 ^ > 7 °') * >

Contextual Info: O rd e rin g n u m b e r : EN 590B N 0.59OB SANYO /1_NPN Epitaxial Planar Silicon2SD894 Transistor 25V/1.5A Driver Applications A Use . Motor drive, printer hummer drive, relay drive, voltage regulator controller. Features . High DC Current Gain not less than 4000 .

Contextual Info: RC144ATÌ and RC144ATL * Rockwell RC144ATÌ and RC144ATL Integrated High Speed Data/Fax/Voice Modem Device Set INTRODUCTION FEATURES The Rockwell RC144ATi and RC144ATL device sets are low cost, integrated 14400 bps data and fax modems with options that support voice and world-wide operation.

Contextual Info: Ordering number :EN 784E _2SD1145 SA\YO N P N Epitaxial Planar Silicon Transistor i High-Current Driver Applications A pplications . Relay drivers, hammer drivers, lamp drivers, strobe DC-DC convertrers, motor drivers. Features • Low saturation voltage

Contextual Info: Ordering n u m b e r:E N 2509C 2SC3996 NO.2509C NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Deflnition CRT Display Horizontal Deflection Output Applications F e a tu re s • High speed tf= 100ns typ . • High reliability (Adoption of HVP process).

Contextual Info: m 2N6677 \ \ SILICO N NPN PO W ER T R A N SIST O R DESCRIPTION: The 2N6677 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. P A C K A G E STYLE T O - 3 MAXIMUM RATING S lc 15 A Ib 5.0 A ce 400 V P d is s 175 W @ Tc = 25 °C

Contextual Info: æ HARRIS H S E M I C O N D U C T O R 1 1 3 Description The HFA1103 is a high-speed, wideband, fast settling current feedback op amp with a sync stripping function. The HFA1103 is a basic op amp with a modified output stage that enables it to strip the sync from a component video signal.

Contextual Info: Ordering number: EN2473A 2SC4108 NPN Triple Diffused Planar Silicon Transistor 4 0 0 V /1 2 A Sw itching R egulator A pplications Features . High breakdown voltage and high reliability . Fast switching speed . Wide ASO . Adoption of MBIT process Absolute Maxjjmim Ratings at Ta=25°C

Contextual Info: Ordering number : EN2508B 2SC3995 NO.2508B NPN Triple Diffused Planar Silicon Transistor SANYO Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications _ F e a tu re s • H igh speed tf= 100ns typ . • H igh reliability (Adoption of H V P process).

Contextual Info: Ordering number: EN 2474A _ 2SC4109 NPN Triple Diffused Planar Silicon Transistor 400V/16A Switching Regulator Applications Features . High breakdown voltage and high reliability . Fast switching speed . Wide ASO . Adoption of MBIT process Absolute Maximum Ratings at Ta=25°C

Contextual Info: I Ordering number: EN2471A 2SC4106 N0.247IA NPN Triple Diffused Planar Silicon Transistor 400V/7A Switching Regulator Applications Features . . . . High breakdown voltage and high reliability Fast switching speed Wide ASO Adoption of MBIT process Absolute Maxim» Ratings at Ta=25°C

Contextual Info: Ordering number: EN 2475 B _ 2SC4110 NPN Triple Diffused Planar Silicon Transistor 400V/25A Switching Regulator Applications Features . High breakdown voltage and high reliability . Fast switching speed . Wide ASO . Adoption of MBIT process Absolute Maxima Ratings at Ta=25°C

2SD1159

Abstract: TRANSISTOR 1ft 83 1Ft TRANSISTOR A 1HF
Contextual Info: Ordering num ber: EN 837E 2SD1159 NPN Triple Diffused Planar Silicon Transistor TV Horizontal Deflection Output, High-Current Switching Applications Features • Capable of efficient drive with small internal loss due to excellect tf. Absolute Maximum Ratings at Ta = 25°C

diode sy 162

Abstract: SC236D 6P14P diode sy SF 127 C GF147S 6D22S 6P45S ECC88 6n23p
Contextual Info: SERVICE-MITTEILUNGEN VEB IN DUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN iR iU ii 1r a d i o - t e i e v i s l o n I SEITE JUNI 1 9 8 1 b 1 - 7 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S SERVICE-ANLEITUNG zum Translstor-Taschenempfänger "Signal 402"

TRANSISTOR GB 558

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •

3091

Abstract: 2SA1702
Contextual Info: Ordering n u m b e r:EN 3 0 9 1 No.3091 _ 2SA1702 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications I F eatu res • Adoption of FBET, MBIT processes • Low saturation voltage • Large current capacity • Fast switching speed

2SD103

Abstract: 2SD102 2SB502 2SB503 AC74 TU-23
Contextual Info: v U □ > N P N f i* M È è » l‘ 7 > ì> 7 ^ SILICON N PN DIFFUSED JUNCTION TRANSISTOR 2 S D 1 , 2 2 S D 1 3 S it I lff i In d u stria l A pplications OJzWJlX'f o DC— DC O B ilS U ^ a . U — O Audio Pow er Amplifier, Pow er Sw itching, DC—DC C onverter

TXAL 226 B

Abstract: RCV144DPI DLM 1057 RC96DPI RC96AC 68-pin rockwell rc144 RC144DPI dpdt mechanical relays 3v MOB6 MD86
Contextual Info: RC144ACÌ and RC144ACL RC144ACÌ and RC144ACL Integrated High Speed Data/Fax/Voice Modem Device Set with Cellular Direct Connect Support * Rockwell INTRODUCTION FEATURES The Rockwell R C144ACi and R C144A CL integrated data/fax/voice modem device set families support high

A 564 transistor

Abstract: 3181 R33 transistor A 564
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.