TRANSISTOR D2604 Search Results

TRANSISTOR D2604 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
BLA1011-300		Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B		Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
ICL7667MJA		Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8	PDF
93L422ADM/B		Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
27S185DM/B		Rochester Electronics LLC	27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18	PDF

TRANSISTOR D2604 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	MRFE6VS25L MRFE6VS25LR5	PDF
D260-4118-0000 Abstract: 0119A 0190A Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	MRFE6VS25L MRFE6VS25LR5 D260-4118-0000 0119A 0190A	PDF
D2604 Abstract: 2sd2604 D-2604 Contextual Info: 2SD2604 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2604 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) Unit: mm	Original	2SD2604 D2604 2sd2604 D-2604	PDF
D2604 Contextual Info: 2SD2604 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2604 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) Unit: mm	Original	2SD2604 SC-67 2-10R1A D2604	PDF
d2604 Abstract: transistor D2604 D-2604 2SD2604 Contextual Info: 2SD2604 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2604 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) Unit: mm	Original	2SD2604 d2604 transistor D2604 D-2604 2SD2604	PDF
D260-4118-0000 Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac	PDF