TRANSISTOR D1857 Search Results

TRANSISTOR D1857 Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR D1857 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
D1857A Abstract: IC 4047 D1857 IC 4047 datasheet BTB1236AE3 BTD1857AE3 Contextual Info: CYStech Electronics Corp. Spec. No. : C855E3 Issued Date : 2004.08.06 Revised Date : Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AE3 Description • High BVCEO • High current capability • Complementary to BTB1236AE3 Symbol Outline BTD1857AE3	Original	C855E3 BTD1857AE3 BTB1236AE3 O-220AB UL94V-0 D1857A IC 4047 D1857 IC 4047 datasheet BTB1236AE3 BTD1857AE3	PDF
D1857A Abstract: D1857 BTB1236AT3 BTD1857AT3 Contextual Info: CYStech Electronics Corp. Spec. No. : C855T3 Issued Date : 2004.12.15 Revised Date : Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AT3 Description • High BVCEO • High current capability • Complementary to BTB1236AT3 Symbol Outline BTD1857AT3	Original	C855T3 BTD1857AT3 BTB1236AT3 O-126 UL94V-0 D1857A D1857 BTB1236AT3 BTD1857AT3	PDF
D1857A Abstract: D1857 BTD1857AI3 Contextual Info: CYStech Electronics Corp. Spec. No. : C855I3 Issued Date : 2004.09.16 Revised Date : Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AI3 Description • High BVCEO • High current capability • Complementary to BTB1236AI3 Symbol Outline BTD1857AI3	Original	C855I3 BTD1857AI3 BTB1236AI3 O-251 UL94V-0 D1857A D1857 BTD1857AI3	PDF
d1857a Abstract: D1857 BTD1857AJ3 Contextual Info: CYStech Electronics Corp. Spec. No. : C855J3 Issued Date : 2004.10.04 Revised Date : Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AJ3 Description • High BVCEO • High current capability • Complementary to BTB1236AJ3 Symbol Outline BTD1857AJ3	Original	C855J3 BTD1857AJ3 BTB1236AJ3 O-252 UL94V-0 d1857a D1857 BTD1857AJ3	PDF
d1857a Abstract: D1857 BTD1857AFP Contextual Info: CYStech Electronics Corp. Spec. No. : C855FP Issued Date : 2004.08.15 Revised Date : Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AFP Description • High BVCEO • High current capability • Complementary to BTB1236AFP Symbol Outline BTD1857AFP	Original	C855FP BTD1857AFP BTB1236AFP O-220FP UL94V-0 d1857a D1857 BTD1857AFP	PDF
d1857 Abstract: TRANSISTOR d1857 BTD1857A3 NPN transistor ECB TO-92 BTB1236A3 D1857 TRANSISTOR Contextual Info: CYStech Electronics Corp. Spec. No. : C855A3 Issued Date : 2004.12.23 Revised Date : 2005.04.29 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857A3 Description • High BVCEO • High current capability • Complementary to BTB1236A3 • Pb-free package	Original	C855A3 BTD1857A3 BTB1236A3 UL94V-0 d1857 TRANSISTOR d1857 BTD1857A3 NPN transistor ECB TO-92 BTB1236A3 D1857 TRANSISTOR	PDF
D1857A Abstract: D1857 BTD1857AI3 Contextual Info: CYStech Electronics Corp. Spec. No. : C855I3 Issued Date : 2004.09.16 Revised Date :2006.06.12 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AI3 Description • High BVCEO • High current capability • Complementary to BTB1236AI3 • Pb-free package	Original	C855I3 BTD1857AI3 BTB1236AI3 O-251 UL94V-0 D1857A D1857 BTD1857AI3	PDF
D1857 Abstract: D1857A 06248 BTB1236AE3 BTD1857AE3 Contextual Info: CYStech Electronics Corp. Spec. No. : C855E3 Issued Date : 2004.08.06 Revised Date :2006.06.12 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AE3 Description • High BVCEO • High current capability • Complementary to BTB1236AE3 • Pb-free package	Original	C855E3 BTD1857AE3 BTB1236AE3 O-220AB UL94V-0 D1857 D1857A 06248 BTB1236AE3 BTD1857AE3	PDF
d1857a Abstract: D1857 BTB12 BTD1857AD3 Contextual Info: CYStech Electronics Corp. Spec. No. : C855D3 Issued Date : 2004.09.21 Revised Date :2005.04.20 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AD3 Description • High BVCEO • High current capability • Complementary to BTB1236AD3 • Pb-free package	Original	C855D3 BTD1857AD3 BTB1236AD3 O-126ML UL94V-0 d1857a D1857 BTB12 BTD1857AD3	PDF
D1857A Abstract: D1857 BTB1236AT3 BTD1857AT3 Contextual Info: CYStech Electronics Corp. Spec. No. : C855T3 Issued Date : 2004.12.15 Revised Date :2006.06.12 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AT3 Description • High BVCEO • High current capability • Complementary to BTB1236AT3 • Pb-free package	Original	C855T3 BTD1857AT3 BTB1236AT3 O-126 UL94V-0 D1857A D1857 BTB1236AT3 BTD1857AT3	PDF
D1857 Abstract: d1857a BTD1857AFP Contextual Info: CYStech Electronics Corp. Spec. No. : C855FP Issued Date : 2004.08.15 Revised Date :2006.06.12 Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AFP Description • High BVCEO • High current capability • Complementary to BTB1236AFP • Pb-free package	Original	C855FP BTD1857AFP BTB1236AFP O-220FP UL94V-0 D1857 d1857a BTD1857AFP	PDF
D1857 Abstract: TRANSISTOR d1857 BTD1857A3 BTB1236A3 NPN transistor ECB TO-92 500ma 1A Contextual Info: CYStech Electronics Corp. Spec. No. : C855A3 Issued Date : 2004.12.23 Revised Date : 2006.03.17 Page No. : 1/9 Silicon NPN Epitaxial Planar Transistor BTD1857A3 Description • High BVCEO • High current capability • Complementary to BTB1236A3 • Pb-free package	Original	C855A3 BTD1857A3 BTB1236A3 UL94V-0 D1857 TRANSISTOR d1857 BTD1857A3 BTB1236A3 NPN transistor ECB TO-92 500ma 1A	PDF
d1857a Abstract: D1857 BTD1857AJ3 Contextual Info: CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BVCEO IC RCESAT BTD1857AJ3 Spec. No. : C855J3 Issued Date : 2004.10.04 Revised Date :2009.02.04 Page No. : 1/6 160V 1.5A 310mΩ Description • High BVCEO • High current capability • Complementary to BTB1236AJ3	Original	BTD1857AJ3 C855J3 BTB1236AJ3 O-252 UL94V-0 d1857a D1857 BTD1857AJ3	PDF
D1857 Abstract: 2SK3298B 2SK3298B-S17-AY mosfet 2SK329 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3298B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3298B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.	Original	2SK3298B 2SK3298B 2SK3298B-S17-AY O-220 MP-45F) D1857 2SK3298B-S17-AY mosfet 2SK329	PDF

d1878 Abstract: D1857 2SK4070 2SK4070-S15-AY 2SK4070-ZK-E1-AY Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4070 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.	Original	2SK4070 2SK4070 2SK4070-S15-AY -S27-AY 2SK4070-ZK-E1-AY 2SK4070-ZK-E2-AY O-251 d1878 D1857 2SK4070-S15-AY 2SK4070-ZK-E1-AY	PDF
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4070 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.	Original	2SK4070 2SK4070 2SK4070-S15-AY O-251 O-252ntrol	PDF
d1878 Abstract: D1857 2SK4070 2SK4070-S15-AY 2SK4070-ZK-E1-AY Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
D1857 Abstract: 2SK3299B-S19-AY MP-25 Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
D1857 Abstract: mosfet 4702 2SK3298B-S17-AY Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF

TRANSISTOR D1857 Search Results

TRANSISTOR D1857 Result Highlights (5)

TRANSISTOR D1857 Datasheets Context Search

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