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Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2510 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2510 is N-Channel MOS Field Effect Transistor designed PACKAGE DIMENSIONS in millimeter for high current switching applications. FEATURES •
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2SK2480
Abstract: IEI-1213 MEI-1202 MF-1134 mj 15003 power circuit
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2480 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2480 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. FEATURES 10.0±0.3
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2sk2480o-220iei-1213mei-1202+2mf-1134mj 15003 power circuit
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TEA-1035
Abstract: tea 1035 2SK2486 IEI-1213 MEI-1202 MF-1134 MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2486 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2486 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. 4 20.0±0.2
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2sk2486tea-1035tea 1035iei-1213+3mei-1202mf-1134mp-88
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transistor d 1302
Abstract: 2SK2510 IEI-1213 MEI-1202 MF-1134 TEA-1037
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2510 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2510 is N-Channel MOS Field Effect Transistor designed in millimeter for high current switching applications. FEATURES 10.0±0.3
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2sk2510transistor d 1302iei-1213mei-1202+2mf-1134tea-1037
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2SK2482
Abstract: IEI-1213 MEI-1202 MF-1134 MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2482 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2482 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. 4 20.0±0.2
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2sk2482iei-1213mei-1202mf-1134+1mp-88
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TEA-1035
Abstract: 2SK2512 IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2512 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2512 is N-Channel MOS Field Effect Transistor designed in millimeter for high current switching applications. FEATURES 10.0±0.3
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2SK2487
Abstract: IEI-1213 MEI-1202 MF-1134 MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2487 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2487 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. 4 20.0±0.2
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2sk2487iei-1213mei-1202mf-1134+1mp-88
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IEI-1213
Abstract: MEI-1202 MF-1134 MP-88 2SK2514
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2514 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2514 is N-Channel MOS Field Effect Transistor designed in millimeter for high current switching applications. 4 20.0±0.2
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2sk251445specialiei-1213mei-1202+2mf-1134mp-88
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2SK2477
Abstract: IEI-1213 MEI-1202 MF-1134 MP-88 D1026
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2477 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2477 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. 4 20.0±0.2
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2sk2477iei-1213mei-1202mf-1134+2mp-88d1026
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2SK2483
Abstract: IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2483 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2483 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. FEATURES 10.0±0.3
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2SK2478
Abstract: IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2478 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2478 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. FEATURES 10.0±0.3
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2sk2478o-220iei-1213mei-1202+1mf-1134
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2SK2478
Abstract: IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2478 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2478 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. FEATURES 10.0±0.3
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2SK2476
Abstract: IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2476 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2476 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. FEATURES 10.0±0.3
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2sk2485
Abstract: TEA-1035 IEI-1213 MEI-1202 MF-1134 MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2485 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2485 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. 4 20.0±0.2
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2SK2488
Abstract: IEI-1213 MEI-1202 MF-1134 MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2488 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2488 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. FEATURES Drain to Source Voltage
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TC-1654
Abstract: L33 TRANSISTOR transistor L33 MEI-1202 MF-1134 FN1A4M npn l33
Contextual Info: DATA SHEET SILICON TRANSISTOR FA1A4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD PACKAGE DIMENSIONS FEATURES in millimeters • Resistors Built-in TYPE 0.4+0.1 –0.05 2.8±0.2 C B 0.65+0.1 –0.15 1.5 • Complementary to FN1A4M
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tc-1654l33 transistortransistor l33mei-1202+3mf-1134fn1a4mnpn l33
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2SK2484
Abstract: IEI-1213 MEI-1202 MF-1134 MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2484 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2484 is N-Channel MOS Field Effect Transistor de- in millimeters FEATURES • Low On-Resistance 3.6 ± 0.2 6.0 MAX. 1 2 3
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2SK2482
Abstract: MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2482 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK2482 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low on-state resistance RDS on = 4.0 Ω MAX. (VGS = 10 V, ID = 3.0 A)
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2SK2479
Abstract: IEI-1213 MEI-1202 MF-1134 MP-25 ED 03 Diode
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2479 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2479 is N-Channel MOS Field Effect Transistor de- in millimeters • Low On-Resistance 3.6 ± 0.2 4 1.3 ± 0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
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nec 2sk2511
Abstract: transistor 2SK2511 2SK2511 IEI-1213 MEI-1202 MF-1134 MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2511 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2511 is N-Channel MOS Field Effect Transistor designed in millimeter for high current switching applications. RDS (on)2 = 40 mΩ (VGS = 4 V, ID = 20 A)
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2sk2511nec 2sk2511transistor 2sk2511iei-1213+3mei-1202mf-1134mp-88
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2SK2481
Abstract: IEI-1213 MEI-1202 MF-1134 MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2481 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2481 is N-Channel MOS Field Effect Transistor de- in millimeters • Low On-Resistance 3.6 ± 0.2 4 1.3 ± 0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
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2SK2485
Abstract: MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2485 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK2485 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low on-state resistance RDS on = 2.8 Ω MAX. (VGS = 10 V, ID = 3.0 A)
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2SK2479
Abstract: IEI-1213 MEI-1202 MF-1134 MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2479 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2479 is N-Channel MOS Field Effect Transistor designed in millimeters • Low On-Resistance 3.6 ± 0.2 RDS(on) = 7.5 W (VGS = 10 V, ID = 2.0 A)
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2SK2485
Abstract: D1027 MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2485 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK2485 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low on-state resistance RDS on = 2.8 Ω MAX. (VGS = 10 V, ID = 3.0 A)
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