TRANSISTOR D 716 Search Results

BUX20

Abstract: bux 716 transistor BUX
Contextual Info: *B U X 2 0 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN. TRIPLE DIFFUSE Preferred device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant Thermal fatigue inspection

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

Contextual Info: P h ilip ^ e m ic o n d u c to r^ ^ ^ • b b 5 3 T 31 Q0 3 1 b b 5 1ST H i APX Product specification NPN 6.5 GHz wideband transistor ^ — DESCRIPTION BFQ135 N AMER PHILIPS/DISCRETE bTE D PINNING NPN transistor in a 4-lead dual-emitter SOT172A1 envelope with a ceramic cap. All leads are

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the

Transistor BFR 96

Abstract: 2SC 930 AF transistor 2Sc 2053 Transistor BFR34a Transistor BFr 99 BFR34A
Contextual Info: SS C D • fl235bD S QQQMb70 ÍS I E û 2 BFR34A 2 N 6620 NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers ^ _ _ -/s' SIEMENS A K T I E N 6 E S E LLS CH AF BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar

MOTOROLA POWER TRANSISTOR lc 945

Abstract: zener ap 474 940 629 MOTOROLA 113
Contextual Info: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.

Contextual Info: MOTOROLA Order this document by MTSF2P03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTSF2P03HD Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs

940 629 MOTOROLA 113

Abstract: Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance

SOT429

Contextual Info: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor FEATURES SYMBOL PSMN003-25W QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 25 V

transistor NEC D 587

Abstract: LS 1691 BM UPA802T l 9143 NEC D 587
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD T he/xP A 802T has b u ilt-in 2 1o w -v o It age tra n s is to rs w h ic h are d e sig ne d PACKAGE DRAWINGS

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD The ¿¡PA802T has b u ilt-in 2 lo w -v o lta g e tra n s is to rs w h ic h are d e sig n e d PACKAGE DRAWINGS

Contextual Info: N A PIER PHILIPS/DISCRETE bRE D bbSBRBl ODBQBE^ 566 H A P X P roduct S pecification Philips Semiconductors BUK100-50DL PowerMOS transistor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic

2SK2235

Abstract: DDS3400 44t transistor DDS34
Contextual Info: TOSHIBA TDTTSSO DDS 3 4 0 0 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2235 35b SILICON N CHANNEL MOS TYPE tt-M OSIII 5 2SK2235 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA803T NPN SILICON EPITAXIALTRANSISTO R WITH BUILT-IN 2 ELEMENTS M INI MOLD ¿¡PA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAWINGS (U n it: m m ) FEATURES •

cc 3025 diode

Abstract: 5T4 tube BUZ110S MC 140 transistor 8235 smd transistor h7 E3045 Q67040-S4005-A2 transistor smd marking CODE Wb transistor marking smd 7c
Contextual Info: In fin e o n BUZ 11 OS ! ^ e d Costoni * technologie* im P r° SIPMOS Power Transistor Product Summary Features • N channel • Enhancement mode Drain source voltage ^DS Drain-Source on-state resistance ñ DSÍon Continuous drain current • Avalanche rated

Contextual Info: International S Rectifier Provisional Data S h eet No. PD -9.1415 IRHM9160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD P roduct S u m m ary -100 Volt, 0 .0 8 7 a RAD H A R D H EXFET International Rectifier’s P-channel RAD HARD tech­

NEC Ga FET marking L

Abstract: ap 2761 l transistor NEC D 822 P nec gaas fet marking nec 2761 NEC 426 NEC Ga FET low noise FET NEC U
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET D ES C R IP TIO N The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO

Harris CA3046

Abstract: CA3046 7h0 ITT ICAN-5296
Contextual Info: S E MI CON] SECTOR 4DE D 4302271 J i HARRIS 003220b I HAS CA3045 CA3046 General Purpose N -P-N Transistor Arrays August 1991 fea tu res Description • Two Matched Tran sisto rs: V b ë Matched ±5mV; Input Offset Current 2pA Max at lc = 1mA The CA304S and CA3046 each consist of fivo general

2SK2089

Abstract: 00E3b D0233
Contextual Info: C1DC]72SG TOSHIBA D0233bf l TO SHIBA FIELD EFFECT TRANSISTOR 130 2SK2089 SILICON N CHANNEL M OS TYPE tt-M O SII.5 2SK2089 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. IN D U S T R IA L A P P L IC A T IO N S TO-22QFL CHOPPER REGULATOR, DC-DC CONVERTER AND M OTOR DRIVE

2SK2222

Contextual Info: TOSHIBA 2SK2222 «Î0T7250 00233Û1 b74 TO SH IBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE tt-M O SII 5 2SK2222 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND M OTOR DRIVE

Contextual Info: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 3 — 24 March 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1. Typical performance

SIDAC 200-400V

Abstract: gas ignition thyristor ignitors for HID lamp circuits
Contextual Info: l Se ec ag * es ED Z NI E9 G 39 CO 716 E R #E te L. U. k ac d P le Fi DO-15X Axial Lead DO-214 Surface Mount TO-92 Type 70 TO-202 Sidac 79 V to 330 V E9 General Description The sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon

MRC252

Abstract: depletion mode BSD254 BSD254A BSD254AR
Contextual Info: Philips Semiconductors ^ 7 1 I 0 flgb 0 Db7 716 Ib b N-channel depletion mode vertical D-MOS transistors FEATURES • P H IN ^Productspecilication BSD254; BSD254A; BSD254AR ’ QUICK REFERENCE DATA • High-speed switching • No secondary breakdown. SYMBOL

B350073

Abstract: 35X35X6
Contextual Info: SPECIFICATION FOR APPROVAL ^ - CUSTOMER DESCRIPTION DIMENSIONS MODEL P/N APPROVED NO APPROVED BY ^ DC BRUSHLESS BLOWER 35X35X6 mm GB0535AEB2-8 M AUTHORIZED SUNONWEALTH ELECTRIC MACHINE INDUSTRY CO., LTD. 12FL., 12Ö CHUNG CHENG 1ST RD., TEL:886-7-7163069(41 LINES)