TRANSISTOR D 667 C Search Results

Contextual Info: SK 80 MD 055 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0## 01## 4 4%  + /- .         + /- ,3 .5 6  9 6 5  + /- ,3 .5 < Values Units -2 /3 667 ,7 /:; 67; 8 8 ! ;3 = > 6-3 . 667 ,7 /:; 67;

LA 4137

Contextual Info: / I /I/J X I/M ì 9-3 89 4 :Rev. 0 : 4/91 +5V/P ro g ram m ab le Low -D ropout V o ltag e R eg u la to r _ G eneral D escription T h e M A X 6 6 7 lo w -d ro p o u t, p o s itiv e , lin e a r v o lta g e re g u la to r s u p p lie s up to 2 5 0 m A of o u tp u t current. W ith

DDR2 SSTL class

Abstract: SSTL_18 DDR1-400 DDR2 SDRAM with SSTL_18 interface TVSOP-48 SSTL-18 PCK2059 SSTV16857 DDR200 hp SSTU32866
Contextual Info: Memory interfaces Support logic for memory modules and other memory subsystems Portfolio overview PC100 to PC133 • AVC, ALVC, AVCM, and ALVCH series registered drivers • PCK2509 and PCK2510 series PLL clock buffers DDR200 to DDR266 • SSTV and SSTL series registered drivers

Diode T148

Abstract: transistor 667 transistor D 667 DTA144EKA T148 marking J1
Contextual Info: FM J 1 A Transistor, digital, PNP, integral diode Features Dimensions U n its: mm • available in an SM T 5 (FMT, SC-74A) package package marking: J1 • package includes a digital PN P transistor (DTA144EKA) and a connected diode • 2.9 ± 0.2 1.9 ± 0.2

Contextual Info: 3QE » • 7^237 OQBQIMb 1 SCS-THOMSON * 15 ELEgTOMS L_.“ SGSP341 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 5 2 x5 3 mils METALLIZATION: Top Al Back A u/C r/N I/A u BACKSIDE THICKNESS: 6100 A DIETHICKNESS: 16 ± 2 mils

Contextual Info: 2N6659 2N6660 _ / V _ 2N6661 N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical O-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and line drivers.

transistor 6J U

Contextual Info: TEXAS INSTR -CL IN/INTFO SS Ô961724 TE XAS De J DG3MSbt 5 | ~ IN STRCLÏN /ÎN TFcf 55C 3 4 56ó T -58-11-23 LINEAR INTEGRATED CIRCUITS TYPES RM4193, RC4193 MICROPOWER SWITCHING REGULATOR D 27 18, SEP T EM B ER 1983 High Efficiency . . . 8 0 % T yp R M 4 1 9 3 . . J G

27e transistor

Abstract: iSS TRANSISTOR bd277
Contextual Info: P ow er Transistors File Number 667 HA RR IS S E M I C O N D S E C T O R BD277 27E D • 4 3 0 2 2 7 1 D02a].33 3 « H A S T - 3 3 - 2 -1 7-A, 70-W, Epitaxial-Base, Silicon P -N-P VERSAWATT Transistors For A pp lication s in Series and Shunt Regulators Features:

2N6661

Abstract: 2N6660 2N6661 transistor 2N6659 max 1988
Contextual Info: MIE D m 2N6659 2N6660 2N6661 711Gfl2b □Q2t.7c 3 1 • P H I N PHILIPS INTERNATIONAL T-31'0& N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and. line drivers.

WP10R24S05

Abstract: WP10R24D12 WP10R24D15 WP10R24S12 WP10R24S15 WP10R48S05 WP10R48S12 TRANSISTOR B 834
Contextual Info: Product Data Sheet 10 WATT REGULATED SMALL PACKAGE DC/DC CONVERTER WP10R FEATURES ● ● ● ● ● ● SMALL PACKAGE SIZE: 1.6" X 2" INDUSTRY STANDARD PINOUT SURFACE MOUNT DEVICES SMD LOW-COST ALTERNATE SOURCE CONTINUOUS SHORT CIRCUIT PROTECTION WITHIN FCC CLASS B LIMITS

Contextual Info: • bbS3^3i o o a ^ A i f ao? h a p x BLW29 N AnER p h i l i p s / j i s c r e t e blE I V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power

Contextual Info: VN0605T N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY .B'SSSSSfe TOP VIEW SOT-23 V BR|DSS •d (A ri r ID 2 iC 60 5 0.18 H 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 n PRODUCT MARKING VN0605T V02 I ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

SMPS 666

Abstract: K575 BUK575 BUK575-100A BUK575-100B k575-10oa
Contextual Info: - T - 3 > Ÿ - o ? Philips Components Data sheet status P re lim in a ry s p e c ific a tio n date of issue March 1991 R e p la c e s B U K 5 4 5 - 1 0 0 A /B B U K 5 7 5 - 1O O A /B PowerMOS transistor Logic level FET 5bE D PHILIPS INTERNATIONAL GENERAL DESCRIPTION

power convertibles

Abstract: smd TRANSISTOR code b6 Power Convertibles dc/dc WP10R24S05 smd 10116 WP10R24D12 WP10R24D15 WP10R24S12 WP10R24S15 WP10R48S05
Contextual Info: 1=POWER f= CONVERTIBLES WP1QR SERIES 10 WATTS REGULATED DC/DC CONVERTERS SMALL PACKAGE, WIDE INPUT RANGE FEATURES APPLICATIONS • SMALL PACKAGE SIZE: 1.6" x 2" • INDUSTRY STANDARD PINOUT • SURFACE MOUNT DEVICES SMD • l o w -c o s t A l t e r n a t e s o u r c e

insyde debug card code

Abstract: NH82801IBM NH82801IEM EMBC2DGM45DR3MK EMBC2DGM45FHUMK SU9400 spi flash ich9m high density sodimm ddr3 memory SU9300 T9400
Contextual Info: Product Brief Development Kit Embedded Computing Intel Core 2 Duo Processor and Mobile Intel® 4 Series Express Chipset Family Development Kit Product Overview The Intel® Core™2 Duo processor and Mobile Intel® 4 Series Express chipset family development kit provides outstanding flexibility for

Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 R e p la ce s B U K 54 5-1 00 A /B PHILIPS N -channel en han cem en t m ode logic level field-effect power transistor in a plastic full-pack envelope. T h e device is intended for use in

2SC1626

Abstract: 251C 2SA816 AC75 Produced by Perfect Crystal Device Technology
Contextual Info: 2 s c 1626 1 ^ U 3 y N P N x t : 5> ^ m B h ^ y ^ x 5> P C T m ^ IL IC O N m&tk-mmm o Medium Pow er A m p l i f i e r A p p l i c a t i o n s o D riv e r S tage A m p lifie r A p p lic a tio n s US if£E T - f : • i f tti EPITAXIAL TRANSISTOR (P C T PROCESS

D 1437 transistor

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the

variable dc voltage ic regulator ,controlled input

Abstract: Motorola Voltage Regulator Step-up Converter sot-23-5
Contextual Info: Order this document by MC33468/D MC33468 Variable Frequency Micropower DC-to-DC Converter The MC33468 is a micropower step–up switching voltage regulator, specifically designed for handheld and pager applications, to provide a regulated output voltage using a minimum of external parts. This device

smd transistor 12W 13

Abstract: transistor SMD 12W MOSFET smd transistor 12W 3 pins transistor SMD 12W D13005 E D13005 D13005 transistor smd transistor 12W 55
Contextual Info: ACT365 Rev 2, 10-Jan-13 High Performance ActivePSRTM Primary Switching Regulator The ACT365 ActivePSRTM is optimized for high performance, cost-sensitive applications, and utilizes Active-Semi’s proprietary primary-side feedback architecture to provide accurate constant

SMD CODE TRANSISTOR JA

Abstract: MAX667 MAX667MJA/883B 5962-9212604MPA smd ja 1.B smd transistor 9v smd transistor
Contextual Info: SCOPE: +5V/Programmable Low-Dropout Voltage Regulator Device Type 01 Generic Number MAX667M x /883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter Mil-Std-1835 Case Outline Package Code MAXIM SMD JA P

Contextual Info: ON Semiconductort MMBTA13LT1 MMBTA14LT1 Darlington Amplifier Transistors MMBTA14LT1 is a Preferred Device NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage

Contextual Info: ROHM m 40E D CO LTD 7826=^=1 DODS^bM fl • R H M N -7 > V X $ / I ransistors 2SD1763 ■— 2 S D 1 7 6 3 T -3 2 -o 9 '> > ;= ]> N 7 > y ^ ^ Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • [50/Dimensions Unit: mm 1 ) W E T 'f e 5 (B V Ce o = 1 2 0 V ) o

567 tone decoder

Abstract: INTERCOM NE567 tone decoder ne567
Contextual Info: PIN CONFIGURATION FEATURES • WIDE FREQUENCY RANGE .01 Hz TO 500kHz • HIGH STABILITY OF CENTER FREQUENCY • INDEPENDENTLY CONTROLLABLE BANDWIDTH (0 T 0 14 PER­ CENT) • HIGH OUT-BAND SIGNAL AND NOISE REJECTION • LOGIC-COMPATIBLE OUTPUT WITH 100mA CURRENT SINKING