TRANSISTOR D 1264 A Search Results
TRANSISTOR D 1264 A Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
TRANSISTOR D 1264 A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IEC-134
Abstract: BFR540 transistor d 1264 BFG541 X3A-BFR540 BFG540 IEC134
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BFR540 BFG540 OT143) BFG541 OT223) X3A-BFR540 X3A-BFR540 711002b 15iim RV-3-5-52/733 IEC-134 BFR540 transistor d 1264 BFG541 BFG540 IEC134 | |
Contextual Info: Philips Semiconductors ^ ^ 53^ 3 1 0 0 3 5 5 1 7 7 bT U NPN 9 GHz wideband transistor crystal APV Product specification X3A-BFR540 AMER PHILIPS/DISCRETE b^E D DESCRIPTION MECHANICAL DATA NPN crystal used in BFR540 SOT23 , BFG540 (SOT143) and BFG541 (SOT223). Crystals are supplied |
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X3A-BFR540 BFR540 BFG540 OT143) BFG541 OT223) | |
Contextual Info: l O K V BASEEFA N i Type Vf No. @ lf 2 0 m A V o lt s m a x ertified T I r = 2V jjA m a x OPTO ubular Transistor Diode D e s c r ip t io n C Isolators C o u p led C TR % V b r ceo V b r ( eco ) @ lc = 1 m A @ I e =100| j A @ Vce=10V V o lts m in V o lts m in |
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I1264 95C2215U | |
transistor A 1264
Abstract: ev 1265 transistor
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900MHz OT-343 Q62702-F1504 transistor A 1264 ev 1265 transistor | |
Contextual Info: MPS6729 Preferred Device One Watt Amplifier Transistor PNP Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −80 Vdc Collector −Base Voltage VCBO −80 Vdc Emitter −Base Voltage VEBO −4.0 |
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MPS6729 O-226) MPSW55 MPSW56 | |
Contextual Info: FT1011/FT1011A Voltage Comparator Voltage Comparator • ■ ■ ■ ■ ■ ■ ■ Description Pin Compatible with FT111 Series Devices Guaranteed Max 0.5mV Input Offset Voltage Guaranteed Max 25nA Input Bias Current Guaranteed Max 3nA Input Offset Current |
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FT1011/FT1011A FT111 250ns FT1011 FT111. FT111, | |
NTE7493A
Abstract: NTE7490 NTE74LS86 NTE74LS90 NTE7495 NTE74S86 NTE7486 NTE7489 NTE74HC86 NTE74C90
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NTE7485, 16-Lead NTE74LS85, NTE74S85 NTE74C85 NTE74S6, NTE74HC86 14-Lead NTE74LS86, NTE7493A NTE7490 NTE74LS86 NTE74LS90 NTE7495 NTE74S86 NTE7486 NTE7489 NTE74C90 | |
Contextual Info: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband |
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MRF1550T1/D MRF1550T1 | |
EB209Contextual Info: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband |
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MRF1550T1/D MRF1550T1 MRF1550T1/D EB209 | |
stripline directional couplers
Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
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SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1 | |
L5N1Contextual Info: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband |
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MRF1535T1/D MRF1535T1 L5N1 | |
Contextual Info: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband |
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MRF1535T1/D MRF1535T1 | |
FERROXCUBE VK200Contextual Info: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband |
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MRF1535T1/D MRF1535T1 MRF1535T1/D FERROXCUBE VK200 | |
A05T
Abstract: AN211A AN215A AN721 MRF1550FT1 MRF1550T1 VK200
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MRF1550T1/D MRF1550T1 MRF1550FT1 A05T AN211A AN215A AN721 MRF1550FT1 VK200 | |
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Contextual Info: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices |
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MRF1550T1/D MRF1550T1 MRF1550FT1 | |
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 15, 6/2009 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices |
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MRF1550N MRF1550NT1 MRF1550FNT1 MRF1550NT1 | |
MRF1550
Abstract: FM LDMOS freescale transistor MRF1550N UHF AN721 MRF1550FNT1 AN215A S11 zener diode MRF1550N MRF1550NT1 VK200
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MRF1550N MRF1550NT1 MRF1550FNT1 MRF1550NT1 MRF1550 FM LDMOS freescale transistor MRF1550N UHF AN721 MRF1550FNT1 AN215A S11 zener diode MRF1550N VK200 | |
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 14, 10/2008 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices |
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MRF1550N MRF1550NT1 MRF1550FNT1 MRF1550NT1 | |
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 12, 2/2008 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices |
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MRF1550N MRF1550NT1 MRF1550FNT1 MRF1550N | |
H270
Abstract: KU ll 14a IRFI460 IRFI460D IRFI460U SS452
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IRFI460D IRFI460U O-259 MIL-S-19500 SSM52 H270 KU ll 14a IRFI460 IRFI460D IRFI460U SS452 | |
adc 0304Contextual Info: Freescale Semiconductor Technical Data MRF1550T1 Rev. 8, 3/2005 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 MRF1550T1 MRF1550FT1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices |
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MRF1550T1 MRF1550NT1 MRF1550FNT1 MRF1550FT1 adc 0304 | |
capacitor 475
Abstract: A05T AN211A AN215A AN721 MRF1535FT1 MRF1535T1 VK200
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MRF1535T1/D MRF1535T1 MRF1535FT1 capacitor 475 A05T AN211A AN215A AN721 MRF1535FT1 VK200 | |
Contextual Info: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices |
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MRF1535T1/D MRF1535T1 MRF1535FT1 | |
QD03-2Contextual Info: SEMTECH CORP 5ÛE 0 1 3 ^ 1 3 ^ 3 00 32 07 D 5 AMP, 85 WATT POSITIVE HYBRID VOLTAGE REGULATORS LAS 2200 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL MAXIMUM UNITS V|N 40 Volts 3 7 .5 Volts Input Voltage Input-O utput V oltage D ifferential V|N‘ V o Pow er D iss ip a tio n ' |
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