TRANSISTOR CR MARKING Search Results

supersot 6 TE

Abstract: Supersot 6
Contextual Info: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB1020 4p Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Com plem entary Dual Transistor

supersot 6 TE

Contextual Info: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB3946 C2 E1 C1 <• Package: SuperSOT-6 Device Marking: .002 g2 Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Com plem entary Dual Transistor

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP General Purpose A m plifier Transistor Surface Mount MSB709-RT1 Motorola Preferred Device COLLECTOR n □ cr 2 1 BASE EMITTER MAXIMUM RATINGS TA = 25°C Rating Collector-Base Voltage Symbol Value v (BR)CBO -6 0 Vdc

marking CODE M92

Contextual Info: • bbS3T31 0023blfi a n ■ APX BF992 N AUER PHI LIP S/ DIS CR ETE L7E D _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 m icrom iniature envelope w ith source and substrate interconnected. T his M O S-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.

TRANSISTOR BI 237

Abstract: NPN/TRANSISTOR BI 237
Contextual Info: 2SD1766 Transistor, NPN Features • available in MPT3 MPT, SOT-89, SC-62 package • package marking: 2SD1766; DB-fr, where * is hFE code • Pq = 2 W, when mounted on 40 x 40 x 0.7 mm ceramic substrate • low collector saturation voltage, typically, VCE(Sat)=0.16 V for

2SD1664

Abstract: marking 2sd1664
Contextual Info: 2SD1664 Transistor, NPN Features Dimensions Units : mm 2SD1664 (MPT3) 4j .e5 -+0 0 .'2 1 u> i.e ± o . i R I r-fl rm : i ! ! ! ! ! in csi Tl (1) J Œ I î M 1.0 ±0.3 available in MPT3 (MPT, SC-62) package package marking: 2SD1664; DA*, where ★ is hFE code

Contextual Info: 2SC2413K 2SC4098 Transistor, NPN Features Dimensions U n its : mm available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages package marking: 2SC2413K, 2SC4098; A-*, where ★ is hFE code 2SC2413K (SMT3) 2.8 ± 0.2 1 .9 ± 0 .2 0 .9 5 0 .9 5 2.4 (2 )[ ]

supersot 6 TE

Contextual Info: S E M IC O N D U C T O R tm FMBA0656 Package: SuperSOT-6 C2 Device Marking: .003 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT- 6 Surface Mount Packsige

D marking PNP

Abstract: MARKING IC RP 6 PR63
Contextual Info: S E M IC O N D U C T O R tm FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. V E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT-6 Surface Mount Packa ge

2SA amplifier

Abstract: H1000I 2SA1514K 2SA1579 2SC3906K 2SC4102 transistor 2SA transistor PNP
Contextual Info: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1514K and 2SA1579; R-*, where ★ is hFE code • • high breakdown voltage: V qeo = -120 V complementary pair with 2SC3906K

A1807

Abstract: pnp transistor 600V 2SA1807F5 transistor marking code NW transistors 2SA transistor 2SA 6 J transistor 2SA 600v PNP -600v
Contextual Info: 2S A 1807F5 Transistor, PNP Features • available in CPT F5 SC-63 package • package marking: A1807-AQ, where ★ is hFE code and □ is lot number • high breakdown voltage, BVceo = ~600 V • low collector saturation voltage, typically VCE(sat) = -0.25 V for

L2SC2411KRLT1G

Abstract: L2SC2411KPLT1 L2SC2411KPLT1G L2SC2411KQLT1 L2SC2411KQLT1G L2SC2411KRLT1 L2SC2411KLT1
Contextual Info: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411K*LT1 FEATURE 3 ƽEpitaxial planar type ƽComplementary to L2SA1036K 1 ƽPb-Free package is available 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT– 23 TO–236AB Marking Shipping

L2SC2411KQLT1G

Abstract: L2SC2411KRLT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411KQLT1G Series FEATURE 3 ƽEpitaxial planar type ƽComplementary to L2SA1036K 1 ƽ We declare that the material of product are Halogen Free and 2 compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION

Contextual Info: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411KQLT1G Series FEATURE ƽEpitaxial planar type 3 ƽComplementary to L2SA1036K ƽ We declare that the material of product are Halogen Free and compliance with RoHS requirements. 1 DEVICE MARKING AND ORDERING INFORMATION

LC7416

Abstract: 3se1
Contextual Info: SANYO S EMI CONDUCTOR CORP 3SE1 D ? cn 7 D 7 t 1 0 0 0 0 1 4 3 T T-51-11 CM O S LSI 2 -Pole 4 -Position Analog Function Switch $ 15 20 B The LC7816 is a 2-pole 4-position analog function switch with 2 huilt-in CMOS analog switches LC4966 type . A soft touch of a button enables switchover of

Contextual Info: EPSON PF400-07 SCI7630M/C Series Switching Regulator I DESCRIPTION •Step-up Switching Regulator 1.5V 2.0, 2.2, 2.35, 2.4, 2.7, 2.8, 3.0, 3.1, 3.5, 3.7, 4.2 ,5.0V •L o w Operating Voltage(Min 0.9V) •Voltage Detecting function, Battery Back-up function

1769-ob32 user manual

Abstract: 1769-OB32 transistor manual substitution FREE 1769OB32 1769 ECR wiring diagram Allen-Bradley 1769-OA16 1769 wiring diagram 1769 single slot dimension 1769-UM007C-EN-P 1769-ECR
Contextual Info: Installation Instructions Compact 32-point Solid-state 24V dc Source Output Module Catalog Number 1769-OB32 Use this document as a guide when installing a Compact 32-point solid-state 24V dc source output module. Topic Page Important User Information 2

TPL621

Abstract: MCP3041 PC817 SOP-4 cosmo 817 PC923 APPLICATION NOTES opto coupler TLP250 MCP3040 mcp3031 tpl621-2 TLP250 MOSFET DRIVER application note
Contextual Info: Optoelectronic Products Reference Guide 2007-2008 1 TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. www.toshiba.com/taec 1 Toshiba is proud to provide this comprehensive optoelectronic products reference guide. As one of the world’s largest manufacturers of optoelectronic products,

1769-OB16

Abstract: transistor manual substitution FREE 1769-ECR 1769-ob16 user manual 1769-ECL transistor manual substitution FREE DOWNLOAD Allen-Bradley 1769-OB16 1769-ECR micrologix 1500 manual EN50081-2 IEC1000-4-2
Contextual Info: Compact 1769-OB16 Solid State 24V dc Source Output Module Installation Instructions Inside Module Description . 2 Module Installation . 3

xtal 32768

Abstract: xtal.32.768 xtal 32.768 SCI7630M pf400
Contextual Info: PF400-07 SCI7630M/C Series ge lta o V n w tio Lo pera cts O rodu P • DESCRIPTION Switching Regulator ●Step-up Switching Regulator 1.5V → 2.0, 2.2, 2.35, 2.4, 2.7, 2.8, 3.0, 3.1, 3.5, 3.7, 4.2 ,5.0V ●Low Operating Voltage(Min 0.9V) ●Voltage Detecting function, Battery Back-up function

13003F

Abstract: 13003a 13003a TRANSISTOR 13003c transistor 13003F 13003e 13003c TRANSISTOR eu 13003e 13003b S W 13003a
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CR13003 TO126 Plastic Package EC B Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage

Contextual Info: EPSON SCI7630M/C Series Switching Regulator # Step-up Switching Regulator 1.5V -» 2.0, 2.2, 2.35, 2.4, 2.7, 2.8, 3.0, 3.1, 3.5, 3.7, 4.2 ,5.0V # L o w Operating Voltage (Min 0.9V) # Voltage Detecting function, Battery Back-up function (SCI7631M) • DESCRIPTION

NEC 10F triac

Abstract: TLP250 MOSFET DRIVER p421f p421 coupler P181 Photocoupler tlp3065 TLP3083 TLP520 TLP250 MOSFET DRIVER application note 5252 F 4-pin
Contextual Info: 2008-3 PRODUCT GUIDE Photocouplers and Photorelays s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Product Index Part Number Package Output Page TLP102 TLP106 TLP112 TLP112A TLP113 TLP114A TLP114A IGM TLP115 TLP115A TLP116 TLP117

mosfet nA idss

Abstract: transistor cr marking "MARKING CODE CR" mosfet low vgs
Contextual Info: Central CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and