TRANSISTOR CC 11 A Search Results

Contextual Info: MOTOROLA Order this document by BUT34/D SEMICONDUCTOR TECHNICAL DATA BUT34 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS

tea2261

Abstract: TEA2260 china tv smps transformer BZX85 C27 tea2261 equivalent TEA5170 AN376 BA157 45W Audio amplifier MASTER-SLAVE SMPS FOR TV
Contextual Info: TEA2261/0 SWITCH MODE POWER SUPPLY CONTROLLER Positive and Negative Current up to 1.2A and 2A • Low Start-Up Current ■ Direct Drive of the Power Transistor ■ Two Levels Transistor Current Limitation ■ Double Pulse Suppression ■ Soft-Starting ■ Under and Overvoltage Lock-out

3772 stepper

Abstract: BYV27 3772 ic 3772 d2
Contextual Info: February 1999 PBL 3772/1 Dual Stepper Motor Driver Description Key Features The PBL 3772/1 is a switch-mode chopper , constant-current driver IC with two chan-nels, one for each winding of a two-phase stepper motor. The circuit is similar to Ericsson´s PBL 3771/1, but has been designed to generate a minimum amount of

transistor for RF amplifier and mixer

Abstract: 2.4 ghz FM RECEIVER CIRCUIT DIAGRAM TOKO CERAMIC FILTER 10.7m TOKO 600ENAS-A998EK 10M7 600ENAS MC13145 MC33410 ML12054A ML13145
Contextual Info: ML13145 UHF Wideband Receiver Subsystem LNA, Mixer, VCO, Prescaler, IF Subsystem, Coiless Detector LOW POWER INTEGRATED RECEIVER FOR ISM BAND APPLICATIONS SEMICONDUCTOR TECHNICAL DATA Legacy Device: Motorola MC13145 The ML13145 is a dual conversion integrated RF receiver intended for ISM

Contextual Info: September 1997 PRELIM INARY MÉLMicro Linear ML6516244 16-Bit Buffer/Line Driver with 3-State Outputs GENERAL DESCRIPTION FEATURES The M L6516244 is a BiCM OS, 16-bit buffer/line driver with 3-state outputs. This device was specifically designed for high speed bus applications. Its 16 channels support

a 3101 OPTOCOUPLER

Abstract: IC A 3101 HCPL-3100 HCPL3101 a 3101 HCPL-3101 V02H 2 anode igbt inverter circuit diagram E55361 5965-3583E
Contextual Info: Power MOSFET/IGBT Gate Drive Optocouplers Technical Data HCPL-3100 HCPL-3101 Features Description • High Output Current IO1 and IO2 0.4 A Peak, 0.1 A Continuous • 1.5 kV/ µs Minimum Common Mode Rejection (CMR) at VCM = 600 V • Wide Operating VCC Range

HCPL-3100

Abstract: a 3101 OPTOCOUPLER E55361 HCPL3101 HCPL-3101 V02H Q23-4
Contextual Info: Power MOSFET/IGBT Gate Drive Optocouplers Technical Data HCPL-3100 HCPL-3101 Features Description • High Output Current IO1 and IO2 0.4 A Peak, 0.1 A Continuous • 1.5 kV/ µs Minimum Common Mode Rejection (CMR) at VCM = 600 V • Wide Operating VCC Range

6010.5

Contextual Info: an A M P com pany Radar Pulsed Power Transistor, 80W, 150ns Pulse, 10% Duty 1.2-1.4 GHz PH1214-80M Features • • • • • • • • NPN S ilicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadban d C lass C O p eratio n H igh Efficiency Interdigitated G eo m etry

HP optocoupler 3000

Abstract: E55361 HCPL-3000 V01L V02H 5965-3584E
Contextual Info: OPTOCOUPLERS H Power Bipolar Transistor Base Drive Optocoupler Technical Data HCPL-3000 Features Description • High Output Current IO2 2.0 A Peak, 0.6 A Continuous IO1 (1.0 A Peak, 0.5 A Continuous) • 1.5 kV/ µs Minimum Common Mode Rejection (CMR) at

TEA1039

Abstract: 7 pin SMPS transistor smps circuit SMPS CIRCUIT DIAGRAM lg lg SMPS circuit 7Z8S672 variable output smps power supply SMPS CIRCUIT DIAGRAM and working
Contextual Info: Philips Sem iconductors Integrated Circuits Product specification Control circuit for switched-mode power supply TEA1039 GENERAL DESCRIPTION The TEA1039 is a bipolar integrated circuit intended for the control of a switched-mode power supply. Together with an external error amplifier and a voltage regulator e.g. a regulator diode it forms a

transistor K 1096

Abstract: BLY89C IEC134 BLY-89c 3 w RF POWER TRANSISTOR NPN
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DÛ2L OObBS'H =134 ■ PHIN 11 BLY89C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage of 13,5 V . The transistor is resistance stabilized

Contextual Info: I i \ I / I A dvanced 1 ^ ' ALD1102A/ALD1102B ALD1102 L in e a r D e v ic e s , In c . DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1102 is a monolithic dual P-channel matched transistor pair intended for a broad range of analog applications. These enhancement­

Contextual Info: 000 c PWR-82331 AND PWR-82333 ILC DATA DEVICE CORPORATION _ SMART POWER 3-PHASE MOTOR DRIVES * DESCRIPTION APPLICATIONS The PWR-82331 and PW R-82333 are 30 A, 3-phase motor drive hybrids. The PWR-82331 has a +200 V rating and uses MOSFETs in the output stage

uhf linear amplifier

Abstract: QLCC-16 RF2105L transistor bipolar driver schematic
Contextual Info: RFEÜ RF2105L M ICRO-DEVICES H IG H POWER L IN E A R U H F A M P L IF IE R T y p ic a l A p p lic a t io n s • 900 MHz ISM Band Applications • Driver Stage for Higher Power Applications • 400 MHz Industrial Radios • Commercial and Consumer Systems

M54583FP

Abstract: pnp darlington array M54523 PNP DARLINGTON ARRAYS 18P4G 20P2N-A M54583 M54583P pnp 8 transistor array
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3017 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING Dimensions in mm 2 S C 3 0 1 7 is a silicon NPN epitaxial planar typ e transistor specifi­ cally designed for V H F p ow er amplifiers applications. FEATURES •

C410

Abstract: C420 FMMT617 ZHCS1000 ZX3CDBS1M832 ZXSC410 ZXSC410E6TA ZXSC420 ZXSC420E6TA
Contextual Info: ZXSC410 ZXSC420 VOLTAGE MODE BOOST CONVERTER DESCRIPTION The ZXSC410 is voltage mode boost converter in SOT23-6 package. Its excellent load and line regulation means that for the full supply range from lithium Ion cells, the output voltage will typically change by less than 1%. Using high efficiency

TCA280A

Abstract: TCA280B IC BIPOLAR TCA280B TCA280 220v ac voltage stabilizer circuit thryristor 5 pin IC 7z 80 ac to 220v ac stabilizer Triac stabilizer application note triac burst control ic
Contextual Info: Product specification Philips Semiconductors Integrated Circuits General-purpose triggering circuit TCA280B GENERAL DESCRIPTION QUICK REFEREN CE DATA The TCA280B is a bipolar integrated circuit delivering positive pulses for triggering a triac or a thyristor. The

benchmarq bq2057

Abstract: 22SRUC bq2057 bq2057C bq2057CSN bq2057T bq2057W bq2057WSN bq2057xSN sot223 theta jc value
Contextual Info: bq2057, bq2057C bq2057T, bq2057W SLUS025F – MAY 2001 – REVISED JULY 2002 ADVANCED LINEAR CHARGE MANAGEMENT IC FOR SINGLE- AND TWO-CELL LITHIUM-ION AND LITHIUM-POLYMER FEATURES D Ideal for Single 4.1 V or 4.2 V and Dual-Cell D D D D D D D D D D D D D

IC1 CA3130 CURRENT TO VOLTAGE CONVERTER

Abstract: CA3130 peak detector about the IC ca3130 CA3130 CA3130 data sheet 2n3055 pinout ca3130 equivalent operational amplifier discrete schematic timer astable multivibrator 2n3055 terminals of 2n3055
Contextual Info: CA3130, CA3130A Data Sheet October 2002 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output CA3130A and CA3130 are op amps that combine the advantage of both CMOS and bipolar transistors. Gate-protected P-Channel MOSFET PMOS transistors are

Application Note 41

Abstract: phototransistor spice model 2N3904 npn bjt transistor power BJT PNP spice model bjt ce amplifier application 2n3904 npn transistor optocoupler spice model photo coupler application note 2N3904 TRANSISTOR using darlington amplifier common emitter bjt
Contextual Info: VISHAY SEMICONDUCTORS www.vishay.com Optocouplers and Solid-State Relays Application Note 41 Faster Switching from Standard Couplers Optocouplers offer tremendous advantages in minimizing EMI and noise susceptibility. It is not an exaggeration to say that a healthy sprinkling of opto-isolation has often meant

BLX13

Abstract: BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971
Contextual Info: II PHI L IP S I N T E R N A T I O N A L MAINTENANCE TYPE MIE B J> 7110flSb O D E 7 7 C H 2 D P H I N II BLX13 H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and AB and in f.m. transmitting appli­ cations in class-C with a supply voltage up to 28 V. The transistor is resistance stabilized and tested

HP5082-2811

Abstract: hp50822811 transistor at 1438
Contextual Info: T EL EDYNE COMPONENTS 3bE D • fleJ17bOE ü007tGb G ■ TSC ‘T WTELEDYNE COMPONENTS “ * 7 0i - V 5 1438 OPERATIONAL AMPLIFIER — WIDEBAND, FAST-SETTLING FEATURES GENERAL DESCRIPTION ■ ■ ■ ■ ■ ■ ■ The 1438 hybrid operational amplifier offer» versatility

2N6034-2N6039

Abstract: buc ku 1N5825 369A-13 MJD6036 MJD6039 MSD6100 transistor 228 npn motorola
Contextual Info: MOTOROLA Order this document by MJ D6036/D SEMICONDUCTOR TECHNICAL DATA NPN M JD 6036 Com plem entary Darlington Power Transistors PNP M JD 6039 DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages