TRANSISTOR CC 11 A Search Results

cc1017

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50DY-24 MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-24 • lc Collector c u rre n t. 50A • V cex • Hfe Collector-em itter vo lta g e . 1200V DC current g a in . 75

Contextual Info: MOTOROLA Order this document by BUT34/D SEMICONDUCTOR TECHNICAL DATA BUT34 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS

876A

Abstract: IR TRANSISTOR
Contextual Info: Optolink Ltd Optical Switches ChanetorM te ic o n Tm I 1f CondWont V cm As ) Shown R L -0 mA Unft Ic O F F IO N | 1OFF V C * K i) V I (tod) V c* A t Shown H -0 H i 20mA S 1- lit Ic As Shown II As Shown nA V V V MS mA V <•*> bV tv coo •CO Ic GAP Output

rt2528

Abstract: DIODE BA159 transistor buv 90 zener diode 1n400 2018a40 2018a ZENER 1N4 Datasheet TEA2019 BYW98-50 TEA2018A
Contextual Info: APPLICATION NOTE TEA2018A - TEA2019 FLYBACK SWITCH MODE POWER SUPPLY IMPLEMENTATION BY J-Y. COUET & T. PIERRE SUMMARY Page I INTRODUCTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 II III

MB74HC04

Abstract: MB74HC MB3769 f16015 MB74
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27202-3E ASSP SWITCHING REGULATOR CONTROLLER MB3769A The Fujitsu MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed com paratorto construct very high speed switching

ND transistor

Abstract: 74ls04 LED Light circuits diagram CIRCUIT DIAGRAM OF LED LOAD DRIVEN BY TOTEM POLE FOR COMMON CATHODE CONNECTION transistor 2N2222 SMD Infineon 80C167 74ls04 LED Light circuits 80C167* microcontroller 74LS04 truth table Difference between LS, HC, HCT devices Q12N2222
Contextual Info: High Speed/Logic Gate Optocoupler SFH67XX Series Appnote 73 1. Introduction The new SFH67XX series of high speed optocoupler is capable of transmitting data rates up to 5 Mb/s typically and 2.5 Mb/s over full temperature range (guaranteed). The combination of low input current (1.6 mA) and active logic

MJE 2160 N

Abstract: power BJT PNP spice model stabiliser circuit diagram BJT with V-I characteristics 500E 800E MDC5001T1 transistor mje 2050
Contextual Info: LESHAN RADIO COMPANY, LTD. Low Voltage Bias Stabilizer with Enable MDC5001T1 SILICON SMALLBLOCKTM • Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and Field Effect Transistors INTEGRATED CIRCUIT • Provides Stable Bias Using a Single Component Without Use of Emitter

MJE 2160 N

Abstract: 9018 transistor NPN stabiliser circuit diagram 10E-18 BJT with V-I characteristics power BJT PNP spice model 500E 800E MDC5001T1
Contextual Info: Low Voltage Bias Stabilizer with Enable MDC5001T1 SILICON SMALLBLOCKTM • Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and Field Effect Transistors INTEGRATED CIRCUIT • Provides Stable Bias Using a Single Component Without Use of Emitter

SiC mitsubishi

Abstract: VC90
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM100CY-H HIGH POWER SWITCHING USE INSULATED TYPE QM100CY-H • lc • Vcex Collector c u rre n t. 100A • hFE DC current g a in . 75 Collector-em itter v o lta g e . 600V

Contextual Info: ASSP SWITCHING REGULATOR CONTROLLER MB3769A The Fujitsu MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed com paratorto constructvery high speed switching

62003F

Abstract: 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852
Contextual Info: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r |Tra n s i st o r| TD62 xxx rray| 40Series, 226Devices P TTL O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F

Contextual Info: / M ik o m an A M P com pany Radar Pulsed Power Transistor, 11W, 1^s Pulse, 10% Duty 3.1-3.4 GHz PH3134-11S V2 00 9^0 c?U 8J> Features ,5/J • • • • • • • • NPN Silicon M icrow ave Pow er T ran sisto r C o m m o n Base C on fig u ratio n B ro a d b an d Class C O p e ra tio n

1461 transistor

Abstract: 1461 TELEDYNE 1461
Contextual Info: WTELEDYNE COMPONENTS 1461 OPERATIONAL AMPLIFIER — HIGH-SPEED, HIGH-POWER, VMOS-OUTPUT FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ The 1461 is an extremely fast, FET-input, VMOS-output, power operational amplifier. It operates from ±15V to +40V supplies, has output voltages up to ±34V, and output

tea2261

Abstract: TEA2260 china tv smps transformer BZX85 C27 tea2261 equivalent TEA5170 AN376 BA157 45W Audio amplifier MASTER-SLAVE SMPS FOR TV
Contextual Info: TEA2261/0 SWITCH MODE POWER SUPPLY CONTROLLER Positive and Negative Current up to 1.2A and 2A • Low Start-Up Current ■ Direct Drive of the Power Transistor ■ Two Levels Transistor Current Limitation ■ Double Pulse Suppression ■ Soft-Starting ■ Under and Overvoltage Lock-out

Contextual Info: MOTOROLA O rder this docum ent by BUL44D2/D SEMICONDUCTOR TECHNICAL DATA BUL44D2 D esigner’s Data Sheet High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter Diode and B uilt-in Efficient A ntisaturation N etw o rk

ic 7912

Abstract: 7912 7912 ic datasheet DATA SHEET OF IC 7912 Ic D 1708 ag TRANSISTOR 7912 BGB550 SCT595 TRANSISTOR C 557 B transistor K 1352
Contextual Info: P r e l i m i n a ry d a t a s h e e t , B G B 5 5 0 , J u ly 2 0 0 1 y BGB 550 li m in ar Mirror Biased Transistor P re MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-07-31 Published by Infineon Technologies AG,

Contextual Info: SÌ9976DY N-Channel Half-Bridge Driver Features Applications • • • • • • • • • • • • • • Single Input for High-Side and Low-Side MOSFETs 20- to 40-V Supply Static dc Operation Cross-Conduction Protected Undervoltage Lockout ESD and Short Circuit Protected

IBM43RF0100

Abstract: transistor K 1413
Contextual Info: IBM43RF0100 Preliminary SiGe High Dynamic Range Low Noise Transistor Features • Low Noise Figure: NFmin = 1 ,1dB @ 2 .0G H z • Low Operating Voltage • Input MP3 Capability: = + 10dBm @ 2.0G Hz, • Package: SO T353 VCc = 3V. lc=5mA Description The IB M 43R F0100 is a Silicon-Germanium SiGe

transistor JE 1090

Abstract: photodiode for CD rw
Contextual Info: W fip l H E W L E T T m Lftm P A C K A R D High Resolution Optical Reflective Sensor Technical Data HBCS-1100 Features • Focused Emitter and Detector in a Single Package • High Resolution-0.190 mm Spot Size • 700 nm Visible Emitter • Lens Filtered to Reject

Contextual Info: MOTOROLA Order this document by MJ16110/D SEMICONDUCTOR TECHNICAL DATA M J16110* M JW 16110* D esigner’s Data Sheet NPN Silicon Power Transistors ‘ Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters.

MJ16010

Abstract: bi 370 transistor MJ16012 ssf transistor MJ16012 MOTOROLA RSS2 IC 7403 2N6191 AM503 MJW16010
Contextual Info: MOTOROLA Order this document by MJ16010/D SEMICONDUCTOR TECHNICAL DATA M J16010 M JW 16010 D esigner’s Data Sheet SW ITCHM ODE S eries NPN S ilicon Pow er Transistors M J16012* These transistors are designed for high-voltage, high-speed, power switching in

Contextual Info: MOTOROLA O rder this docum ent by MJE18206/D SEMICONDUCTOR TECHNICAL DATA M JE 18206 M JF18206 D esigner’s Data Sheet SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light B allast and Sw itching Power Supply Applications POWER TRANSISTORS

Contextual Info: TA8461F T O SH IB A TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT MULTI-CHIP TA8461F DUAL POWER OPERATIONAL AMPLIFIER The TA8461F is a multiple chip IC consisting of 4 saturated voltage discrete transistors and 1 dual operational amplifier. FEATURES • Large Output Current

SN55450

Abstract: SN55450B transistor D2217 SS451 transistor 1yc SN754S1B d2217
Contextual Info: T E X A S I N S T R -CLIN/INTFC} 8961724 TEXAS IN STR S F § 0^:1.754 0D7SflSD h LIN /IN T F C 91D 75850 D SN55450B THRU SNS5454B SN75451B THRU SN75454B DUAL PERIPHERAL DRIVERS D2217, DECEMBER 1976-REVISED SEPTEMBER 1986 SN55450B . . . J PACKAGE (TOP VIEW)