TRANSISTOR CASE TO 106 Search Results

2SD1788

Abstract: ITO-220 TP4L10
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1788 Case : ITO-220 TP4L10 Unit : mm 4A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

TRANSISTOR D 2627

Abstract: transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor TCA 321 Telefunken Electronic 12A3 T0126 BU546
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ÔSHDDTb DOQRMfi? ■ BU 546 TTtliLEHFtyJDiSSES&i} electronic Crwtivel«chooioo«s Silicon NPN Power Transistor Applications; Switching mode power supply Features: • In triple diffusion technique • Short switching time • High reverse voltage

Contextual Info: XTR106 XTR 106 X TR 1 06 SBOS092A – JUNE 1998 – REVISED NOVEMBER 2003 4-20mA CURRENT TRANSMITTER with Bridge Excitation and Linearization FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● LOW TOTAL UNADJUSTED ERROR

smd transistor marking DP

Abstract: CS5201 CS5203 IN4002 LT1085
Contextual Info: CS5203−1 3.0 A Adjustable Linear Regulator The CS5203−1 linear regulator provides 3.0 A at adjustable output voltages with an accuracy of ±1.5 %. The device uses two external resistors to set the output voltage within a 1.25 V to 5.5 V range. The regulator is intended for use as a post regulator and

cost of Inductor

Abstract: CD75 ML4851 ML4851-3 ML4851CS-3 ML4851CS-5 ML4851ES-3 ML4861 fairchild 923 fLIPFLOP
Contextual Info: FEATURING Extended Commercial Temperature Range -20˚C to 70˚C for Portable Handheld Equipment ML4851 Low Current, Voltage Boost Regulator GENERAL DESCRIPTION FEATURES The ML4851 is a low power boost regulator designed for DC to DC conversion in 1 to 3 cell battery powered

Contextual Info: OPA2541 Dual High Power OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● OUTPUT CURRENTS TO 5A ● POWER SUPPLIES TO ±40V ● FET INPUT The OPA2541 is a dual power operational amplifier capable of operation from power supplies up to ±40V and output currents of 5A continuous. With two monolithic power amplifiers in a single package it provides

TIS129

Contextual Info: TYPE TIS129 N-P-N SILICON TRANSISTOR B U L L E T IN N O . D L -S 7 3 1 2 0 0 7 , J U N E 1 9 7 3 S IL E C T t V HF/U H F TRANSISTOR* DESIGNED FOR COMMON-BASE OSCILLATOR AND AMPLIFIER APPLICATIONS • Low Cce . . . 0.3 pF Max • Specified Ratio if • High fx . . . 800 MHz Min

transistor sp 772

Contextual Info: Power Transistor RT232 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 19dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.14GHz

TIS128

Contextual Info: TYPE TIS128 P-N-P SILICON TRANSISTOR B U L L E T IN N O . D L -S 7 3 1 2 0 0 5 , M A R C H 1 9 7 3 SILECTt V H F/U H F TRANSISTORi WITH FORWARD-AGC CHARACTERISTICS DESIGNED FOR COMMON-BASE AMPLIFIER APPLICATIONS • Low Cce . . . 0.3 pF Max • Low Noise at 850 MHz . . . 6.5 dB Max

TIS126

Contextual Info: TYPE TIS126 N-P-N SILICON TRANSISTOR B U L L E T IN N O . D L -S 7 3 1 1 9 9 2 , M A R C H 1 9 7 3 HIGH-FREQUENCY SiLECTt TRANSISTOR* FOR USE IN VHF MIXERS AND NON-AGC IF AMPLIFIERS • High fT • • • 600 MHz Min • Specified fT vs I q Characteristic

Contextual Info: Power Transistor RT232 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 19dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.14GHz

BV E1 382 1229

Abstract: transistor BF 502
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT93W PNP 4 GHz wideband transistor Product specification Supersedes data of November 1992 March 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain

2n3820 transistor

Abstract: TIC 106b 2n3820
Contextual Info: TYPE 2N3820 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L -S 6 8 7 9 4 7 , A U G U S T 1 9 6 5 -R E V IS E D J U L Y 1968 SILECTf FIELD-EFFECT TRANSISTOR * For Industrial and Consumer Small-Signal Applications m e c h a n ic a l d a t a

la 4507

Abstract: M34507E4FP M34507M2-XXXFP M34507M4-XXXFP A-6390
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

nec 151

Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900
Contextual Info: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.

Contextual Info: SILICON STABISTOR DIODE B U L L E T IN I NO. D L -S 7311937, M A R C H 1973 F O R S T A B IS T O R A P P L IC A T IO N S I I • Meter Protectors • Signal Limiters • Temperature Sensors • Voltage Stabilizers • Transistor Biasing • Logarithmic Attenuators

f71882fg

Abstract: fintek f71882fg f71882 AUTOMATIC 12V PC FAN CONTROL BY USING THERMISTOR scr speed control dc motor PC intel ICH8 MOTHERBOARD FAN MOTOR CONTROL SPEED WITH LM358 micro USB Connector AB type Female dual stacked FINTEK F71882FG IO FAN MOTOR CONTROL SPEED WITH LM358 PWM
Contextual Info: F71882 F71882 Super Hardware Monitor + LPC I/O Release Date: May, 2008 Version: V0.28P May, 2008 V0.28P F71882 F71882 Datasheet Revision History Version 0.20P 0.21P Date 2005/10/14 2005/12/08 Page 8 13 50 53 103 105 106 107 0.21P 0.22P 2005/12/14 2005/12/19

Contextual Info: DATA SHEET PHOTOCOUPLER PS2761-1 HIGH ISOLATION VOLTAGE 4-PIN SOP PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2761-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. This package is mounted in a plastic SOP Small Outline Package for high density applications.

2SC2150

Abstract: NE57835 NE578 nec NE57800 NE57807 2SC215 NE AND micro-X NE578 transistor NEC ka 42
Contextual Info: NEC/ CALIFORNIA NEC 5 bE D b427414 000540b 4bS HINE CC NE57800 NE57807 NE57835 NPN SILICON MICROWAVE TRANSISTOR "í-si-n - FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz The NE578 series of NPN silicon transistors is designed for use

Contextual Info: Features • • • • • • • High Dynamic Range for AM and FM Integrated AGC for FM High Intercept Point 3rd-order for FM FM Amplifier Adjustable to Various Cable Impedances High Intercept Point 2nd-order for AM Low-noise Output Voltage Low-power Consumption

Contextual Info: T O S H IB A TENTATIVE TC58V32DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 M BIT 4 M x 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V32DC device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.

tc58v32ft

Abstract: TC58V32
Contextual Info: IN TEG RA TED CIRCUIT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58V32 FT TO SHIBA TECHNICAL DATA SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58V32FT device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and

transistor B 764

Abstract: ATC600F150JT250XT 0051A
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MP055N Rev. 0, 7/2013 RF Power LDMOS Transistors AFT09MP055NR1 AFT09MP055GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from

TPS2456A

Contextual Info: TPS2456A www.ti.com SLVSBI8 – JULY 2012 Dual 12 V Protection and Blocking Controller Check for Samples: TPS2456A FEATURES DESCRIPTION • The TPS2456A is a dual, 12 V, channel protection hotswap and blocking (ORing) controller that provides inrush control, current limiting, overload