D1864
Abstract: BTD1864I3 BTB1243I3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848I3 Issued Date : 2003.04.18 Revised Date : 2004.06.30 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD1864I3 Features • Low VCE sat • Excellent current gain characteristics • Complementary to BTB1243I3
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D2150
Abstract: NPN transistor ECB TO-92 PT10m BTD2150A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2006.03.14 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD2150A3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA
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D882S
Abstract: TRANSISTOR D882S NPN transistor ECB TO-92 BTB772SA3 BTD882SA3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848A3-H Issued Date : 2003.05.31 Revised Date :2004.01.15 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882SA3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics
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c848a3-hbtd882sa3btb772sa3ul94v-0+3d882stransistor d882snpn transistor ecb to-92
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D2150
Abstract: D2150 s BTD2150A3 NPN transistor ECB TO-92 500ma 1A
Contextual Info: CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2005.06.03 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD2150A3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA
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D882 q
Abstract: D882 TRANSISTOR PIN h D882 TRANSISTOR b 772 p D882 TRANSISTOR D882 D882 TRANSISTOR transistor D882 datasheet d882 equivalent J D882
Contextual Info: CYStech Electronics Corp. Spec. No. : C848T3-H Issued Date : 2002.08.18 Revised Date : 2005.11.22 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882T3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics
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c848t3-hbtd882t3btb772t3o-126+12-55isul94v-0d882 qd882 transistor pinh d882transistor b 772 pd882transistor d882d882 transistortransistor d882 datasheetd882 equivalentj d882
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BTB1424AD3
Abstract: BTD2150AD3 d2150a
Contextual Info: CYStech Electronics Corp. Spec. No. : C848D3 Issued Date : 2004.07.06 Revised Date : 2005.04.20 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2150AD3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics
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BTB772AM3
Abstract: BTD882AM3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848M3-H Issued Date : 2003.06.17 Revised Date : 2005.07.11 Page No. : 1/4 Low VCE sat NPN Epitaxial Planar Transistor BTD882AM3 Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics
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d2150a
Abstract: TRANSISTOR C 4460 D2150 BTB1424AD3 BTD2150AD3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848D3 Issued Date : 2004.07.06 Revised Date : 2005.11.16 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2150AD3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics
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BTD2150L3
Abstract: BTB1424L3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848L3 Issued Date : 2004.10.07 Revised Date : 2005.07.13 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2150L3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A • Excellent current gain characteristics
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D2150
Abstract: d2150a BTD2150AT3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848T3 Issued Date : 2004.07.01 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2150AT3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics
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BTB1424L3
Abstract: BTD2150L3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848L3 Issued Date : 2004.10.07 Revised Date : 2204.11.15 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2150L3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A • Excellent current gain characteristics
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TRANSISTOR D882
Abstract: transistor D882 datasheet D882 SPECIFICATION D882 TRANSISTOR PIN D882 d882 npn transistor h D882 D882 TRANSISTOR d882 equivalent marking d882
Contextual Info: CYStech Electronics Corp. Spec. No. : C848D3-H Issued Date : 2005.05.04 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882D3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics
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c848d3-hbtd882d3200mabtb772d3+12o-126mlul94v-0transistor d882transistor d882 datasheetd882 specificationd882 transistor pind882d882 npn transistorh d882d882 transistord882 equivalentmarking d882
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D882 TRANSISTOR PIN
Abstract: D882 q D882 TRANSISTOR D882 TRANSISTOR D882 D882 SPECIFICATION h D882 D882 p J D882 transistor D882 datasheet
Contextual Info: CYStech Electronics Corp. Spec. No. : C848T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882T3/S Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics
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c848t3-hbtd882t3/sbtb772t3/sbtd882t3+12o-126ul94v-0d882 transistor pind882 qd882 transistord882transistor d882d882 specificationh d882d882 pj d882transistor d882 datasheet
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BTB1424N3
Abstract: BTD2150N3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2006.10.25 Page No. : 1/5 Low VCE sat NPN Epitaxial Planar Transistor BTD2150N3 Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.1A • Excellent current gain characteristics
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d1760
Abstract: TRANSISTOR d1760 BTB1184J3 BTD1760J3 d1760 NPN Transistor BTD1760
Contextual Info: CYStech Electronics Corp. Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2005.10.04 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD1760J3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A • Excellent current gain characteristics
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BTB1424N3
Abstract: BTD2150N3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2004.11.08 Page No. : 1/4 Low VCE sat NPN Epitaxial Planar Transistor BTD2150N3 Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.1A • Excellent current gain characteristics
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D882 TRANSISTOR PIN
Abstract: D882 SPECIFICATION transistor "D882 p" D882 J D882 D882 TRANSISTOR h D882 D882 tp C848I3-H transistor D882 datasheet
Contextual Info: CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD882I3 BVCEO IC RCESAT Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2009.02.04 Page No. : 1/6 30V 3A 125mΩ typ. Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A
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D882 TRANSISTOR PIN
Abstract: D882 SPECIFICATION D882 TRANSISTOR TO 252 D882 D882 252 d882 J D882 d882 to252 transistor "D882 p" d882 power transistor
Contextual Info: CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD882J3 BVCEO IC RCESAT Spec. No. : C848J3-H Issued Date : 2003.04.02 Revised Date :2009.02.04 Page No. : 1/7 30V 3A 125mΩ typ. Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A
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btd882j3c848j3-hbtb772j3o-252+12pw350usul94v-0d882 transistor pind882 specificationd882 transistorto 252 d882d882252 d882j d882d882 to252transistor "d882 pd882 power transistor
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BTB1424AM3
Abstract: BTD2150AM3
Contextual Info: Spec. No. : C848M3-A Issued Date : 2002.08.18 Revised Date : 2005.10.04 Page No. : 1/5 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2150AM3 Features • Low VCE sat , VCE(sat)=0.1 V (typical), at IC / IB = 1A / 50mA • Excellent current gain characteristics
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d1760
Abstract: TRANSISTOR d1760 d1760 NPN Transistor C848J3 BTB1184J3 BTD1760J3 BTD1760
Contextual Info: CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1760J3 BVCEO IC RCESAT Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2009.02.04 Page No. : 1/6 50V 3A 125mΩ typ. Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A
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c845
Abstract: c846 transistor D-12 IRGBC30K C-844
Contextual Info: PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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irgbc30ko-220abc-848c845+3c846 transistord-12c-844
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s48b
Abstract: CS-48B C848B transistor marking SA 8
Contextual Info: Transistors SST6838 I NPN General Purpose Transistor SST6838 •Features 1 8 V ceo < 4 0 V tc= 1m A) 2 ) Com plem ents the SST8839. •External dimensions (Units ' mm) • Package, marking, and packaging specifications Type Package name Marking SST8838
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sst6838sst8839sst8838100mhz+5c848bspec-c22s48bcs-48btransistor marking sa 8
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c845
Abstract: C847 c846 transistor C-843 C844 D-12 IRGBC30K c844 g C-844 C847 RECTIFIER
Contextual Info: PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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c845
Contextual Info: P D -9.1071 International [^Rectifier IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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