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    TRANSISTOR C5825 Search Results

    TRANSISTOR C5825 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    TRANSISTOR C5825 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    C5825

    Contextual Info: Power transistor 60V, 3A 2SC5825 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		2SC5825 200mV 2SA2072. SC-63) OT-428> C5825 R1010A C5825 PDF

    C5825

    Abstract: 2SC5825 2SA2073
    Contextual Info: Power transistor 60V, 3A 2SC5825 zDimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		2SC5825 200mV 2SA2073 SC-63) OT-428> C5825 R0039A C5825 2SC5825 2SA2073 PDF

    C5825

    Contextual Info: Power transistor 60V, 3A 2SC5825 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		2SC5825 200mV 2SA2072. SC-63) OT-428> C5825 R1120A C5825 PDF

    C5825

    Abstract: 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073
    Contextual Info: 2SC5825 Transistors Power transistor 60V, 3A 2SC5825 zDimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and


    Original     		2SC5825 200mV 2SA2073 SC-63) OT-428> C5825 C5825 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073 PDF

    C5825

    Abstract: 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073
    Contextual Info: 2SC5825 Transistors Power transistor 60V, 3A 2SC5825 !External dimensions (Unit : mm) 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 1.0 0.5 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 0.75 !Features 1) High speed switching.


    Original     		2SC5825 SC-63) OT-428> 200mV 2SA2073 C5825 C5825 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073 PDF

    C5825

    Abstract: transistor C5825 2SA20 2SC5825 2SA2073 Transistor 2sa2073
    Contextual Info: 2SC5825 Transistors Power transistor 60V, 3A 2SC5825 !External dimensions (Unit : mm) 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 1.0 0.5 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 0.75 !Features 1) High speed switching.


    Original     		2SC5825 SC-63) OT-428> 200mV 2SA2073 C5825 C5825 transistor C5825 2SA20 2SC5825 2SA2073 Transistor 2sa2073 PDF