TRANSISTOR C5122 Search Results

TRANSISTOR C5122 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR C5122 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
C5122 TRANSISTOR Abstract: C5122 2SC5122 transistor c5122 Contextual Info: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications Unit: mm • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Ta = 25°C)	Original	2SC5122 O-92MOD C5122 TRANSISTOR C5122 2SC5122 transistor c5122	PDF
Contextual Info: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications Unit: mm • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Ta = 25°C)	Original	2SC5122 O-92MOD	PDF
C5122 TRANSISTOR Abstract: transistor c5122 2SC5122 C5122 Contextual Info: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) Unit: mm (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)	Original	2SC5122 C5122 TRANSISTOR transistor c5122 2SC5122 C5122	PDF
C5122 TRANSISTOR Abstract: C5122 2SC5122 Contextual Info: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications • • Unit: mm High breakdown voltage: VCEO = 400 V Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)	Original	2SC5122 O-92MODlled C5122 TRANSISTOR C5122 2SC5122	PDF
C5122 TRANSISTOR Abstract: 2SC5122 Contextual Info: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) Unit: mm (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)	Original	2SC5122 O-92MOD C5122 TRANSISTOR 2SC5122	PDF
calculation of line diSTANCE relay REL 670 Abstract: siemens EN 60947 VDE 0660 IEC 947 Siemens KTY 84 PTC UMC100-FBP pt1000 thermistor curve 1svr450071r0000 1SVR450065R0000 Siemens kty84 temperature sensor 1SVR430811R1300 1SAR477000R0100 Contextual Info:  Measuring and monitoring relays CM and C5xx range 2 Content Beneﬁts and advantages . 2/ 2 Monitoring features and application ranges . 2/ 4	Original	F0206 F0b06 2CDC110004C0207 calculation of line diSTANCE relay REL 670 siemens EN 60947 VDE 0660 IEC 947 Siemens KTY 84 PTC UMC100-FBP pt1000 thermistor curve 1svr450071r0000 1SVR450065R0000 Siemens kty84 temperature sensor 1SVR430811R1300 1SAR477000R0100	PDF