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    TRANSISTOR C4881 Search Results

    TRANSISTOR C4881 Result Highlights (5)

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    TRANSISTOR C4881 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 2SC4881 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications • Low saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 µs (typ.) Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Symbol


    Original
    2SC4881 PDF

    transistor C4881

    Abstract: c4881
    Contextual Info: 2SC4881 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications • Low saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 µs (typ.) Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original
    2SC4881 2-10R1A transistor C4881 c4881 PDF

    transistor C4881

    Abstract: c4881 2SC4881
    Contextual Info: 2SC4881 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications • Low saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 µs (typ.) Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Symbol


    Original
    2SC4881 transistor C4881 c4881 2SC4881 PDF

    c4881

    Abstract: transistor C4881 2SC4881
    Contextual Info: 2SC4881 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications • Low saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 s (typ.) Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original
    2SC4881 c4881 transistor C4881 2SC4881 PDF