TRANSISTOR C4881 Search Results

TRANSISTOR C4881 Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 2SC4881 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications • Low saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 µs (typ.) Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Symbol	Original	2SC4881	PDF
transistor C4881 Abstract: c4881 Contextual Info: 2SC4881 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications • Low saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 µs (typ.) Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics	Original	2SC4881 2-10R1A transistor C4881 c4881	PDF
transistor C4881 Abstract: c4881 2SC4881 Contextual Info: 2SC4881 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications • Low saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 µs (typ.) Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Symbol	Original	2SC4881 transistor C4881 c4881 2SC4881	PDF
c4881 Abstract: transistor C4881 2SC4881 Contextual Info: 2SC4881 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4881 High-Current Switching Applications • Low saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 s (typ.) Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics	Original	2SC4881 c4881 transistor C4881 2SC4881	PDF