TRANSISTOR C33 Search Results

Contextual Info: g M OTOROLA M C3346 General Purpose Transistor Array One D ifferentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The MC3346 is designed for general purpose, low power applications for consumer and industrial designs.

c3346

Abstract: c3346 transistor nf transistor array MC3356P
Contextual Info: M M O T O R O L A - M C3346 General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The MC3346 is designed for general purpose, low power applications for

Contextual Info: BLP15M7160P Power LDMOS transistor Rev. 2 — 10 June 2014 Product data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The

Contextual Info: BLP15M7160P Power LDMOS transistor Rev. 1 — 10 January 2014 Objective data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The

BLF888

Abstract: dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP
Contextual Info: BLF888 UHF power LDMOS transistor Rev. 04 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W

Contextual Info: BLF888 UHF power LDMOS transistor Rev. 03 — 11 February 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W

j3076

Abstract: BLF888 Technical Specifications of DVB-T2 Transmitter J1455 DVB-T2 L33 TRANSISTOR LDMOS digital C4532X7R1E475MT020U RF35 J1378
Contextual Info: BLF888 UHF power LDMOS transistor Rev. 5 — 21 January 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W

a1757

Abstract: A1797
Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D091 BLF368 VHF push-pull power MOS transistor Product specification Supersedes data of 1998 Jul 29 2003 Sep 26 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 PIN CONFIGURATION FEATURES

philips Trimmers 60 pf

Abstract: trimmer capacitor ceramic philips ferroxcube 4c6 BLF278 ferroxcube toroid 4312 020 36642 transistor power BR 78L05 transistor c36 balun
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of October 1992 File under Discrete Semiconductors, SC08a 1996 Oct 21 Philips Semiconductors Product Specification VHF push-pull power MOS transistor

c38 transistor

Abstract: capacitor MKT Philips philips MKT transistor rf vhf BR 78L05 capacitor MKT ceramic trimmer capacitor L7 diode philips catalog potentiometer 100 pf, ATC Chip Capacitor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF378 VHF push-pull power MOS transistor Product specification Supersedes data of October 1992 File under Discrete Semiconductors, SC08a 1996 Oct 17 Philips Semiconductors Product specification VHF push-pull power MOS transistor

2222 809 09006 capacitor

Abstract: BLF278 philips ferroxcube 4c6
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of October 1992 File under Discrete Semiconductors, SC08a 1996 Oct 21 Philips Semiconductors Product Specification VHF push-pull power MOS transistor

A302 w3

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D091 BLF248 VHF push-pull power MOS transistor Product specification Supersedes data of 1997 Dec 17 2003 Sep 02 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF248 PIN CONFIGURATION FEATURES

atc 17-33

Abstract: class A push pull power amplifier class B push pull power amplifier philips catalog resistors RGS 13/1 U1 78L05 vhf linear amplifier BLF248 c4l7 SOT262
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF248 VHF push-pull power MOS transistor Product specification Supersedes data of 1997 Dec 17 2003 Sep 02 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF248 PIN CONFIGURATION

BLF378

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF378 VHF push-pull power MOS transistor Product specification Supersedes data of 1996 Oct 17 1998 Jul 29 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF378 PINNING - SOT262A1

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

c39 transistor

Abstract: transistor c36 c38 transistor Philips 2222-581 BLV950 PHILIPS BLV950 philips resistor 2322 156 Philips 2222 052 transistor c37
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification File under Discrete Semiconductors, SC08b 1996 Jan 26 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 FEATURES DESCRIPTION • Internal input and output matching for easy matching,

EZ90-25-TP

Abstract: transistor c9 ez90 BLF369 ez902 transistor 228 T3 ez9025tp
Contextual Info: BLF369 VHF power LDMOS transistor Rev. 02 — 8 December 2006 Objective data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial applications in the HF/VHF band. Table 1.

J307 FET

Abstract: AGR19180EF JESD22-A114 agere c8
Contextual Info: Preliminary Data Sheet March 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

81A7031-50-5F

Contextual Info: Freescale Semiconductor Technical Data Document Number: A2T07D160W04S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth

ez90

Abstract: ez902 BLF369 VHF transmitter circuit EZ90-25-TP
Contextual Info: BLF369 VHF power LDMOS transistor Rev. 01 — 13 April 2006 Objective data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial applications in the HF/VHF band. Table 1: Typical performance

J307 FET

Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386
Contextual Info: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

smd transistor l32

Abstract: SMD EZ 648 001aan207 BLF0510H6600P
Contextual Info: BLF0510H6600P Power LDMOS transistor Rev. 1 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog

transistor j241

Abstract: j241 J241 transistor
Contextual Info: Document Number: A2T07H310-24S Rev. 0, 6/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 47 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to

BLF369-NXP

Abstract: transistor r8 BLF369 EZ90-25-TP VHF transmitter circuit
Contextual Info: BLF369 Multi-use VHF power LDMOS transistor Rev. 04 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description A general purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz.