TRANSISTOR C309 Search Results

BTA1759M3

Abstract: BTC4505M3
Contextual Info: CYStech Electronics Corp. Spec. No. : C309M3 Issued Date : 2003.06.30 Revised Date : Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTA1759M3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA.

BTNA44A3

Abstract: BTPA94A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C309A3 Issued Date : 2003.06.30 Revised Date : Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTPA94A3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA.

4z sot23 marking code

Abstract: marking 4z sot-23 BTA1759N3 BTC4505N3 pnp transistor 300v sot23
Contextual Info: CYStech Electronics Corp. Spec. No. : C309N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTA1759N3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA.

4z sot23 marking code

Abstract: BTNA44N3 BTPA94N3
Contextual Info: CYStech Electronics Corp. Spec. No. : C309N3-H Issued Date : 2003.06.30 Revised Date : Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTPA94N3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA.

A1759

Abstract: C309A3-R BTA1759A3 BTC4505A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C309A3-R Issued Date : 2003.10.15 Revised Date : 2004.04.02 Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTA1759A3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typical VCE(sat) = -0.2V at Ic / IB = -20mA /-2mA.

C311 Transistor

Abstract: TRANSISTOR C309 transistor c308 c309 transistor
Contextual Info: P D - 9.1072 bitemational jorJRectifier IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all “tail" losses • Optimized for medium operating frequency 1 to

transistor c307

Abstract: C311 Transistor transistor c308 C-311 D-12 IRGBC30M
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1072 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

TRANSISTOR C307

Abstract: transistor c308
Contextual Info: International IK» 1Rectifier P D - 9 .1 0 7 2 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

TRANSISTOR C307

Abstract: C-311 D-12 IRGBC30M ac power control applications 400v 16a C311 Transistor
Contextual Info: PD - 9.1072 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

TRANSISTOR C307

Abstract: C311 Transistor ac power control applications 400v 16a C-311 D-12 IRGBC30M c307 mosfet c309
Contextual Info: PD - 9.1072 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

transistor c257

Contextual Info: S P RAG UE /S EM IC ON D GROUP 8 514 0 19 SPRAGUE. =13 D • SEM ICO N D S / ICS fiS13ÔS0 00G357b 0 ■ T*" <27-^Î ö 93D 03576J>. BIPOLAR TRANSISTOR CHIPS PNP Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain

C502 Zener diode

Abstract: vr301 potentiometer VR501 F101 Type T fuse TRANSISTOR C309 4518BE VR502 vr302 potentiometer 2sc1015-GR 2SC1015GR
Contextual Info: ^ SERVICING INFORMATION B X PRECISION* M O D E L 3011A 3011B FUNCTION GENERATOR PARTS LIST SCHEMATIC SYMBOL DESCRIPTION B+K PRECISION PART NUMBER RESISTORS Unlisted resistors are +5%, 1/4 W. See Schematic for value. R101, 102 R104 R105 R205 R206 R207 R208

1-450-358-11

Abstract: SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE
Contextual Info: TA-VE150 SERVICE MANUAL AEP Model UK Model This amplifier has the Dolby Surround system. Manufactured under license from Dolby Laboratories Licensing Corporation. “Dolby”, the double-D symbol a and “Pro Logic” are trademarks of Dolby Laboratories Licensing Corporation.

schematic diagram tv sony 21 trinitron

Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
Contextual Info: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV

C30902S

Abstract: C30902E geiger PerkinElmer Avalanche Photodiode geiger counter C30921E avalanche photodiode c30902e PerkinElmer trigger avalanche photodiode bias C30921S
Contextual Info: Description Silicon Avalanche Photodiodes PerkinElmer Type C30902E avalanche C30902E, C30902S, C30921E, C30921S EVERYTHING High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications IN A photodiode utilizes a silicon detector chip

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

Contextual Info: E fi 8, G/CANADA/OPTOELEK n c i i 3D3DblG ÜÜÜD12L. 0b3 • CANA T1 1D E le c tro Silicon Avalanche Photodiodes OptiCS C30902E, C30902S, C3 0921E, C30921S DATA SHEET High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications RCA Type C30902E ava­

C30902E

Abstract: C30921S avalanche photodiode c30902e C30921E C30902 740417 C30902S geiger RCA Transistor rca power transistor
Contextual Info: RCA IO E D I 7MfiMb7S OQOQlSb U | T ' H i - INC/ ELECTRO OPTICS I t C il Silicon Avalanche Photodiodes C30902E, C30902S, C30921E, C3Q921S >?!-»»»'r.-V- D A T A S H E E T High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications

transistor cross reference

Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC

dinverter 768r

Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

C30902E

Abstract: 30902E EG*G Optoelectronics C30902BFC avalanche photodiodes avalanche photodiode C30902 C30921E geiger C3090
Contextual Info: 1 J l E C s 3 * 1 - 3 9 8 C O P TO ELECTR O N ICS C30902E, C30902S, C30921E. C 3 0921S, C30902BST, C30902BFC C c J i7 c iC / < 3 High Speed Solid State Detectors for Fibre Optic and Very Low Light-Level Applications EG&G 30902E avalanche photodiode utilises a silicon

C30902EH

Contextual Info: Silicon Avalanche Photodiodes C30902 Series High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview Features and Benefits Excelitas’ C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This

C30902SH-DTC

Abstract: C30902EH PerkinElmer Avalanche Photodiode APD, laser, range, finder C30902 geiger apd C30902SH PerkinElmer mode a C3092SH-TC PerkinElmer trigger mode
Contextual Info: Introduction PerkinElmer Type C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. The responsivity of the

C30902EH

Abstract: C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz C30921EH
Contextual Info: High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview PerkinElmer’s C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as