TRANSISTOR C2804 Search Results

TRANSISTOR C2804 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR C2804 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
C2804 Abstract: transistor c2804 Contextual Info: M/C2803/2804 Miere / MIC2803/2804 High-Voltage High-Current Darlington Array Preliminary Information General Features The MIC2803 and MIC2804 are high-voltage, high-current Darlington arrays ideal for switching high-power loads from logic-level TTL, CMOS, or PMOS control signals.	OCR Scan	M/C2803/2804 MIC2803/2804 MIC2803 MIC2804 MIC2803/4 500mA, 18-pin C2804 transistor c2804	PDF
Contextual Info: UCC2800/2801/2802/2803/2804/2805ĆQ1 LOWĆPOWER BICMOS CURRENTĆMODE PWM ą SGLS121C − JULY 2002 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 200 V Using D D D D D D Internal Leading-Edge Blanking of the D D Machine Model C = 200 pF, R = 0	Original	UCC2800/2801/2802/2803/2804/2805Ä SGLS121C 70-ns UC3842 UC3842A UCC2800/1/2/3/4/5	PDF
c2800 transistor Abstract: transistor c2800 Contextual Info: UCC2800/2801/2802/2803/2804/2805ĆQ1 LOWĆPOWER BICMOS CURRENTĆMODE PWM ą SGLS121C − JULY 2002 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 200 V Using D D D D D D Internal Leading-Edge Blanking of the D D Machine Model C = 200 pF, R = 0	Original	UCC2800/2801/2802/2803/2804/2805Q1 SGLS121C 70-ns UC3842 UC3842A UCC2800/1/2/3/4/5 c2800 transistor transistor c2800	PDF
Contextual Info: UCC2800/2801/2802/2803/2804/2805ĆQ1 LOWĆPOWER BICMOS CURRENTĆMODE PWM ą SGLS121C − JULY 2002 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 200 V Using D D D D D D Internal Leading-Edge Blanking of the D D Machine Model C = 200 pF, R = 0	Original	UCC2800/2801/2802/2803/2804/2805Ä SGLS121C 70-ns UC3842 UC3842A UCC2800/1/2/3/4/5	PDF
Contextual Info: UCC2800/2801/2802/2803/2804/2805ĆQ1 LOWĆPOWER BICMOS CURRENTĆMODE PWM ą SGLS121C − JULY 2002 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 200 V Using D D D D D D Internal Leading-Edge Blanking of the D D Machine Model C = 200 pF, R = 0	Original	UCC2800/2801/2802/2803/2804/2805Ä SGLS121C 70-ns UC3842 UC3842A UCC2800/1/2/3/4/5	PDF
C2804 Abstract: transistor c2800 Contextual Info: UCC2800/2801/2802/2803/2804/2805ĆQ1 LOWĆPOWER BICMOS CURRENTĆMODE PWM ą SGLS121C − JULY 2002 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 200 V Using D D D D D D Internal Leading-Edge Blanking of the D D Machine Model C = 200 pF, R = 0	Original	UCC2800/2801/2802/2803/2804/2805Ä SGLS121C 70-ns UC3842 UC3842A UCC2800/1/2/3/4/5 C2804 transistor c2800	PDF