TRANSISTOR C1C Search Results

NTC 220-11

Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
Contextual Info: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,

Contextual Info: T'ìRTDTb DQ1SQS7 3=15 Ordering num ber: EN 3173 _ LB1740 No.3173 Monolithic Digital IC 8-Channel, Current-Source Output, Darlington Transistor Array The LB1740 is an 8-channel current source output Darlington transistor array made up of PNP transistors

BJT with i-v characteristics

Abstract: 2N7000 spice transistor BS170* PMOS transistor 1gm 6 2N7000 TRANSISTOR mosfet amplifer circuit 1AV Series 10KHZ 2N7000 BS170
Contextual Info: EE 320L Electronics I Laboratory Laboratory Exercise #8 MOS Transistor Characterization and Biasing Department of Electrical and Computer Engineering University of Nevada, at Las Vegas Objective: The objective of this lab is to introduce the student to the MOS transistor. This lab will

2N5109 motorola

Abstract: transistor 2N5109 c0851 2n5109
Contextual Info: 4b E D • h3b?2S4 OOcmOb b 1 ■ flOTb T -3 3 -n MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 2N5109 MOTOROLA SC XSTRS/R F The RF Line 1.2 GHz 50 mAdc HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILIC O N . . . designed specifically for broadband applications requiring good

Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 3 - NOVEM BER 1995 PARTMARKING DETAIL - FMMT495 O_ ~ 495 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V Collector-Emitter Voltage

1N06CLE

Abstract: zener diode 9CA transistor D 716
Contextual Info: a RLP1N06CLE h a r r is January 1994 Voltage-Clamping Current-Limited ESD-Protected N~Channel Enhancement-Mode Power Field-Effect Transistor Features Package • 1A, 55V r DS O N . . 0.75Ì1 • 'L im it.

transistor d261

Abstract: D311 transistor M61516FP 7.1ch transistor D311 analog audio 3 input selector loudness control PIN23 QFP80-P-1420-0 d31 b
Contextual Info: MITSUBISHI SOUND PROCESSOR ICs M61516FP 7.1ch ELECTRONIC VOLUME WITH 10 INPUT SELECTOR APPLICATION Receiver,AV Amp,Mini Stereo etc. FEATURE FUNCTION FEATURE Electronic Volume 1 8 channel Independent Electronic Volume with High Voltage Transistor. (0~-92dB/1dBstep,-95,- dB)

D9D TRANSISTOR

Abstract: BEST BASS TREBLE CIRCUIT capacitor 4.7u M61531FP D19c D15C D14D D19D
Contextual Info: Preliminary M61531FP 6ch Electronic Volume with 10 Input Selectors REJ03F0050-0110Z Rev.1.1 Jun.01.2004 Features Functions Features Electric volume 6 channel independent electric volume with high voltage transistor 0 to –99 dB/1 dB step, –∞ dB Input selector

MRF9002NR2

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 8, 5/2006 RF Power Field Effect Transistor Array MRF9002NR2 Designed for broadband commercial and industrial applications with frequen- cies to 1000 MHz. The high gain and broadband performance of this device

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 - APRIL 94 FXT790A _ [ — — — — — — — — FEATURES * * 40 Volt VCE0 Gain of 200 at lc=1 Amps A ffbJ iiff /I//// * Very low saturation voltage APPLICATIONS

MRF9002NR2

Abstract: RO4350 J104 J158
Contextual Info: Document Number: MRF9002NR2 Rev. 8, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor Array MRF9002NR2 Designed for broadband commercial and industrial applications with frequen- cies to 1000 MHz. The high gain and broadband performance of this device

13.56mhz c class amp

Abstract: ARF1519 100C ARF1518 ATC 100C 13.56MHZ mosfet Class B power amplifier, 13.56MHz 13.56Mhz class AB power amplifier
Contextual Info: ARF1519 ARF1519 BeO 104T-100 RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE 250V 750W 25MHz The ARF1519 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz.

Contextual Info: ARF1519 ARF1519 BeO 104T-100 RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE 250V 750W 25MHz The ARF1519 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz.

Contextual Info: ARF1519 ARF1519 BeO 104T-100 RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE 250V 750W 25MHz The ARF1519 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz.

ON SEMICONDUCTOR J122

Abstract: MRF9002NR2
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array

J133 mosfet transistor

Abstract: transistor j239 MRF9002NR2 ON SEMICONDUCTOR J122 transistor marking z9 J122 MARKING J133 transistor MRF9002R2 RO4350 mosfet j133
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array

AN1370

Abstract: AN-1370 LM5034 LM5034EVAL si7866dp SOT-23 P-MOSFET optocoupler 8 pin configuration
Contextual Info: National Semiconductor Application Note 1370 Dennis Morgan February 2005 Introduction slope compensation, direct interface with opto-coupler transistor, and thermal shutdown. The LM5034EVAL evaluation board provides the power supply design engineer with a fully functional 200W dual interleaved DC-DC power switching regulator using forward/

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT553 ISSUE 1 - FEB 94 FEATURES * 100 Volt VCE0 * 1 Amp continuous current * Ptot= 1 Watt REFER TO ZTX553 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage v CB0 -120 V Collector-Emitter Voltage

13.56mhz c class amp

Abstract: ATC 100C 13.56Mhz class AB power amplifier 13.56MHZ mosfet N CHANNEL MOSFET 10A 1000V POWER MOSFET 4600 13.56Mhz rf amplifier 100C ARF1519 750w planar transistor
Contextual Info: ARF1519 D ARF1519 BeO 104T-100 G RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 250V 750W 25MHz The ARF1519 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz.

MRF9002NR2

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array

0105-50

Abstract: Scans-00115685
Contextual Info: 0182998 ACRIAN GENERAL 97D 0 1156 INC 0104-100 DESCRIPTION 100 WATTS - 28 VOLTS 100-400 MHz The 0104-100 balanced transistor is specifically designed for wideband operation from 100-400 MHz. It may be operated Class A, AB or C. Gold metalization and silicon

power transistor unit j122

Abstract: MRF9002NR2
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 7, 7/2005 RF Power Field Effect Transistor Array N -Channel Enhancement-Mode Lateral MOSFET MRF9002NR2 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device

78L05

Abstract: BLF247B UBD287 TRANSISTOR ss S2d Philips 2222 78 Voltage regulator 78L05
Contextual Info: Product specification Philips Semiconductors BLF247B VHF push-pull power MOS transistor PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability 1 • Withstands full load mismatch. /~ l 2 X~l g• APPLICATIONS g 5 • Large signal applications in the