Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR C1213 Search Results

    TRANSISTOR C1213 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR C1213 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    atc 17-33

    Abstract: transistor c1213 c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 capacitor siemens 4700 35 atc 1733
    Contextual Info: PTF 10036 85 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 10036 is an internally matched, 85 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and full gold metallization ensure


    Original
    1-877-goldmos1301-ptfatc 17-33transistor c1213+5c1213 transistorcharacteristic of transistor c1213g200capacitor siemens 4700 35atc 1733 PDF

    transistor c1213

    Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 transistor Rf C1213 C1213 jmc 5701
    Contextual Info: ERICSSON ^ PTF 10009 85 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10009 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 85 watts minimum output power. Nitride surface


    OCR Scan
    20awgtransistor c1213c1213 transistorcharacteristic of transistor c1213+3transistor rf c1213c1213jmc 5701 PDF

    transistor c1213

    Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 G200 transistor Rf C1213
    Contextual Info: PTF 10009 85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10009 is an 85–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. This device operates at 50% efficiency with 13 dB gain. Nitride surface passivation and full


    Original
    1-877-goldmos1522-ptftransistor c1213c1213 transistor+3characteristic of transistor c1213g200transistor rf c1213 PDF

    atc 17-33

    Abstract: atc 1733 860-960MHz
    Contextual Info: ERICSSON ^ PTF 10036 85 Watts, 860-960 MHz LDMOS Field Effect Transistor Description The 10036 is an internally matched, common source n-channel, enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 960 MHz. It is rated at 85 watts minimum output


    OCR Scan
    atc 17-33atc 1733860-960mhz PDF

    CHARACTERISTIC OF TRANSISTOR C1213

    Abstract: transistor c1213 c1213 transistor transistor Rf C1213 G200
    Contextual Info: PTF 10009 85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10009 is an 85 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 50% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization


    Original
    1-877-goldmos1301-ptfcharacteristic of transistor c1213transistor c1213+3c1213 transistortransistor rf c1213g200 PDF

    transistor c1213

    Abstract: c1213 transistor CHARACTERISTIC OF TRANSISTOR C1213 transistor Rf C1213 1606 mosfet
    Contextual Info: ERICSSON í PTE 10036* 85 Watts, 8 6 0 - 9 0 0 MHz L D M O S Field Effect Transistor Description The 10036 is an internally matched, common source n-channel, enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 85 watts minimum output


    OCR Scan
    transistor c1213c1213 transistorcharacteristic of transistor c1213transistor rf c1213+11606 mosfet PDF

    schematic diagram tv sony 21 trinitron

    Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
    Contextual Info: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV


    Original
    kv-ef34m80rm-951scc-u28d-ana324-m3+12a80lpd10xsbx3005-01schematic diagram tv sony 21 trinitroncxa2139scxa2130sic cxa2139sic cxa2130sc3807 transistor datasheetsony ic cxa2130sfree cxa2139sc3807 power transistorstv5112 PDF

    10G EML eudyna

    Abstract: EML TOSA tosa Thermistor 10G EML TOSA TOSA 10G EML pcb fiber TRANSCEIVER CIRCUIT DIAGRAM rs232 EML DRIVER tosa flex cable design 0201 resistor 10 Gbps EML TOSA
    Contextual Info: Reference Design: HFRD-20.2 Rev. 5; 11/08 As of July, 2008 this reference design board is no longer available. Gerber files and schematics are available upon request. REFERENCE DESIGN 1310nm XFP Uncooled EML Transceiver Maxim Integrated Products Reference Design: XFP Transceiver


    Original
    hfrd-201310nmds1862ds3900+13hfrd18rs232hfrd-1810g eml eudynaeml tosatosa thermistor10g eml tosatosa 10g eml pcbfiber transceiver circuit diagram rs232eml drivertosa flex cable design0201 resistor10 gbps eml tosa PDF

    transistor k1317

    Abstract: K2225 k1317 transistors k2628 k1117 transistors K1317 k1118 k2225 transistor k1117 transistor transistor k1117
    Contextual Info: AN1503/D ECLinPS and ECLinPS Lite SPICE Modeling Kit Prepared by Senad Lomigora, Paul Shockman ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide customers with enough circuit schematic and SPICE parameter information


    Original
    an1503/dr14525transistor k1317k2225+8k1317transistors k2628k1117transistors k1317k1118k2225 transistork1117 transistortransistor k1117 PDF

    K1117

    Abstract: k2225 transistor K2225 k1317 K0217 TRANSISTOR K0312 K1618 K0311 transistor k1117 transistor k0319
    Contextual Info: AN1503/D ECLinPS and ECLinPS Lite SPICE Modeling Kit Prepared by Senad Lomigora, Paul Shockman ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide customers with enough circuit schematic and SPICE parameter information


    Original
    an1503/dr14525k1117k2225 transistor+8k2225k1317k0217transistor k0312k1618k0311 transistork1117 transistork0319 PDF

    transistors k2628

    Abstract: k1118 k1317 k0317 k2225 transistor transistor k1317 k1117 k2225 transistor K2628 k2324
    Contextual Info: AN1503/D ECLinPS and ECLinPS Lite SPICE Modeling Kit Prepared by Senad Lomigora, Paul Shockman ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide customers with enough circuit schematic and SPICE parameter information


    Original
    an1503/dr14525transistors k2628k1118+8k1317k0317k2225 transistortransistor k1317k1117k2225transistor k2628k2324 PDF

    k1117

    Abstract: k2225 k2225 transistor k1117 transistor k1317 transistor k1317 transistor k1117 k1118 transistor k1213 k1213
    Contextual Info: AN1503/D ECLinPS and ECLinPS Lite] SPICE Modeling Kit Prepared by Senad Lomigora, Paul Shockman ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide customers with enough circuit schematic and SPICE parameter information


    Original
    an1503/dr14525k1117k2225+8k2225 transistork1117 transistork1317transistor k1317transistor k1117k1118transistor k1213k1213 PDF

    k2225 transistor

    Abstract: k1118 k1117 k1213 power transistor k1821 transistor k1213 k1117 transistor K2225 k1518 transistor k1117
    Contextual Info: AN1560/D Low Voltage ECLinPS and ECLinPS Lite SPICE Modeling Kit 150Prepared by Senad Lomigora and Paul Shockman ON Semiconductor Broadband Application Engineers http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to extend the information given


    Original
    an1560/d150preparedan1503k2225 transistor+9k1118k1117k1213power transistor k1821transistor k1213k1117 transistork2225k1518transistor k1117 PDF

    transistor c1213

    Abstract: c1213 transistor c1819 C1217 SY88236 R2526 TOSA ROsa TP8-10 c1213 SMD CAPACITORS color code
    Contextual Info: SY88232L and SY88236L Optical Evaluation Board General Description Features This evaluation board allows for checking the performance of the SY88236 burst mode laser driver and the continuous mode laser driver SY88232 while driving a FP or a DFB laser and its integrated post


    Original
    sy88232lsy88236lsy88236sy88232+13sy88236l-alsy88232l-al21orizedm9999-092409-atransistor c1213c1213 transistorc1819c1217r2526tosa rosatp8-10c1213smd capacitors color code PDF

    C2331

    Abstract: LX1671 LX1671CLQ LX1671CPW LX1672 LX1672-03CLQ LX1672-03CPW LX1672-05CPW LX1672-06CLQ transistor c1213
    Contextual Info: LX1671/LX1672 CLQ MLPQ PACKAGE MULTIPLE OUTPUT LOADSHARETM PWM EVALUATION BOARD USERS GUIDE LX1671CPW, LX1671CLQ, LX1672-03CLQ, LX1672-03CPW, LX1672-05CPW, and LX1672-06CLQ are protected by U.S. Patents: 6,285,571 & 6,292,378 TM Copyright 2002 Revision 1.0, 2/24/2006


    Original
    lx1671/lx1672lx1671cpwlx1671clqlx1672-03clq+7lx1672-03cpwlx1672-05cpwlx1672-06clqlx1671c2331lx1672transistor c1213 PDF

    K1213

    Abstract: k1518 transistor c1213 equivalent transistor k1213 k1112 K1113 k0305 k0205 k0309 equivalent k1117
    Contextual Info: AN1560/D Low Voltage ECLinPS and ECLinPS Lite SPICE Modeling Kit Prepared by Senad Lomigora and Paul Shockman ON Semiconductor Broadband Application Engineers http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to extend the information given


    Original
    an1560/dan1503r14525k1213+9k1518transistor c1213 equivalenttransistor k1213k1112k1113k0305k0205k0309 equivalentk1117 PDF

    k1213

    Abstract: transistors k2628 transistor c1213 equivalent k1317 K0316 k2225 transistor k0232 k1117 k1518 k0317
    Contextual Info: AN1560/D Low Voltage ECLinPS and ECLinPS Lite SPICE Modeling Kit Prepared by Senad Lomigora and Paul Shockman ON Semiconductor Broadband Application Engineers http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to extend the information given


    Original
    an1560/dan1503r14525k1213+9transistors k2628transistor c1213 equivalentk1317k0316k2225 transistork0232k1117k1518k0317 PDF

    3 phase bridge fully controlled rectifier

    Abstract: 1K Ohm resistor 1/8W 5V power supply using bridge rectifier circuit drawing of digital multimeter capacitor 470uf 16v bridge rectifier smd digital multimeter circuit 1206 smd resistor 1206 smd 100 ohm resistor 15A Adjustable Positive Voltage Regulator
    Contextual Info: LX1671/LX1672 CLQ MLPQ PACKAGE MULTIPLE OUTPUT LOADSHARETM PWM EVALUATION BOARD USERS GUIDE I N T E G R A T E D Copyright 2002 Revision 0.2d, 4/29/2004 P R O D U C T S LX1671 EVALUATION BOARD USER GUIDE TABLE OF CONTENTS


    Original
    lx1671/lx1672lx16713 phase bridge fully controlled rectifier1k ohm resistor 1/8w+85v power supply using bridge rectifiercircuit drawing of digital multimetercapacitor 470uf 16vbridge rectifier smddigital multimeter circuit1206 smd resistor1206 smd 100 ohm resistor15a adjustable positive voltage regulator PDF

    c25 rectifier

    Abstract: LX1671 transistor c1213 kd smd transistor smd transistor 2d C25 02D FET Transistor Guide Variable resistor 10K ohm LX1672 CR78 diode
    Contextual Info: LX1671/LX1672 CLQ MLPQ PACKAGE MULTIPLE OUTPUT LOADSHARETM PWM EVALUATION BOARD USERS GUIDE I N T E G R A T E D Copyright 2002 Revision 0.2d, 8/8/2002 P R O D U C T S LX1671 EVALUATION BOARD USER GUIDE TABLE OF CONTENTS


    Original
    lx1671/lx1672lx1671c25 rectifiertransistor c1213+7kd smd transistorsmd transistor 2dc25 02dfet transistor guidevariable resistor 10k ohmlx1672cr78 diode PDF

    D100D

    Abstract: k1113 K1112 k1011 C1213A C1314A k0305 transistor c1013 k0308 K0216
    Contextual Info: AND8077/D GigaCommt SiGe SPICE Modeling Kit Prepared by: Senad Lomigora and Paul Shockman http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide sufficient circuit schematic and SPICE parameter information to perform system level interconnect modeling for devices in


    Original
    and8077/dd100dk1113k1112+7k1011c1213ac1314ak0305transistor c1013k0308k0216 PDF

    D100D

    Abstract: C1213A transistor k1213 k1011 k0305 K0116 k1112 K1012 K0115 k1113
    Contextual Info: AND8077/D GigaCommt SiGe SPICE Modeling Kit Prepared by: Senad Lomigora and Paul Shockman http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide sufficient circuit schematic and SPICE parameter information to perform system level interconnect modeling for devices in


    Original
    and8077/dd100dc1213atransistor k1213+7k1011k0305k0116k1112k1012k0115k1113 PDF

    k1213

    Abstract: K1118 k0312 k2225 transistor transistors k0317 transistors k2628 K1020 c1213 transistor transistor k1213 K1117
    Contextual Info: AND8009/D ECLinPS Plus SPICE Modeling Kit Prepared by Senad Lomigora, Paul Shockman, Paul Hunt ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE Objective The Objective of this kit is to provide customers with enough circuit schematic and SPICE parameter information


    Original
    and8009/dr14525k1213k1118+8k0312k2225 transistortransistors k0317transistors k2628k1020c1213 transistortransistor k1213k1117 PDF

    C1923 transistor

    Abstract: transistor c1213 equivalent Transistor C1923 ceramic 1000p capacitors C1923 transistor c1213 TRANSISTOR C53 22P 0805 HIP6004 HIP6200
    Contextual Info: Evaluation Tool Demonstrates DeCAPitator Performance HIP6200EVAL1 Application Note August 1998 AN9763.2 Author: Greg J. Miller Introduction The DeCAPitator is designed to reduce the number of bulk capacitors required at the output of a switching DC-DC


    Original
    hip6200eval1an9763hip620012vin+10spcj-123-01c1923 transistortransistor c1213 equivalenttransistor c1923ceramic 1000p capacitorsc1923transistor c1213transistor c5322p 0805hip6004 PDF

    Transistor C1923

    Abstract: transistor c1213 equivalent C1923 transistor C1923 Switching Regulator 8-SOIC dc-dc 3a mmbt2222alt CR78 C4050 c1213 transistor 1N4148 SOD-123
    Contextual Info: Harris Semiconductor No. AN9763.1 Harris Intelligent Power March 1998 Evaluation Tool Demonstrates DeCAPitator Performance HIP6200EVAL1 Author: Greg J. Miller Introduction stage is a high edge-rate transient generator capable of producing 8A (or higher) transients. A block diagram of the


    Original
    an9763hip6200eval1hip6200spcj-123-01+15c19-23c40-50r6-16r24-3412vintransistor c1923transistor c1213 equivalentc1923 transistorc1923switching regulator 8-soic dc-dc 3ammbt2222altcr78c4050c1213 transistor1n4148 sod-123 PDF