TRANSISTOR C118 Search Results

IRGPC40FD2

Abstract: ge c122 transistor c117
Contextual Info: hrtemational pd-smus Big Rectifier_ IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT V ces = 600V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes

C11892E

Abstract: D12971E D1297 2SJ494 TEA-1035
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in millimeter This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. 4.5±0.2

C11892E

Abstract: 2SJ495 TEA-1035 A3856 m30 tf 125
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channel MOS Field Effect Transistor in millimeter designed for high current switching applications. 10.0 ± 0.3

transistor c124

Abstract: C124 E S W transistor IRGPC40FD2 C-123 C-118
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes

C11892E

Abstract: TEA-1037 D1297
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in m illim eter T his product is P-Channel MOS Field Effect Transistor designed for high current switching applications.

transistor c124

Abstract: transistor c119 transistor 45 f 122 C124 E S W transistor ge c122 C-123 C-118 IRGPC40FD2 GE C118
Contextual Info: PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in millimeter This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. 10 .0 ± 0.3

transistor c124

Abstract: C-118 C-123 IRGPC40FD2 C124 E S W transistor C124 E S S transistor
Contextual Info: PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

transistor c118

Abstract: 2N6259 equivalent 2n6258 2N6258 equivalent 2n6259
Contextual Info: i?[M [5)y Tr -Jfotitron M ED IU M TO HIGH V O L T A G E Devices. Inc CHIP NUM BER 4 NPN SINGLE DIFFUSED M ESA TRANSISTOR FORMERLY 49) CONTACT METALLIZATION B ase, Emitter and Collector Solder C oated 9 5 /5 % lead /tin. ASSEMBLY RECOMMENDATIONS .300” It is advisable that:

2NG259

Abstract: transistor c118 2n6258
Contextual Info: 8368602 SOL ITRON DEVICES INC TS 95D 02909 D DE | A3t.At.0E OOOSTm 0 y - j 3 ^/5 - 1~ M ED IU M TO HIGH V O LT A G E CHIP NUMBER Devices, Ine IMPINI SIN G LE DIFFUSED M ESA TRANSISTOR FORMERLY 49 CONTACT METALLIZATION E a se , Emitter an d Collector Solder C oated 95/5% lead /tin.

2SK129

Abstract: PC1099CX PC1094 *c1094g 2SK1295 tea 1503 pc1094c1094g TEA-578 TEA-572 2SK1295 NEC
Contextual Info: データ・シート MOS形電界効果パワー トランジスタ MOS Field Effect Power Transistor 2SK1295 Ｎチャネル パワーMOS FET スイッチング用 工業用 外 形 図（単位：mm） 2SK1295は，Ｎチャネルエンハンスメント形パワーMOS

2SJ461

Abstract: ITT DIODE W7 MARKING J1A C10535J C10943X marking JE FET D1073
Contextual Info: • S /— h MOSJfê M O S Field Effect Transistor 2SJ461 MOS FET r§ jâ L - ^ "f y 2 S J 4 6 1 Ü 2 . 5 V H 2 Ì Ì J ^ i ' 7 ° C O P 5 1 + ^ ^ M i M O S F E T ? ' <fe U , t e l B E T ' l g l i l T # , U £ - t t A , 0 f f ii/ L r t i h A ' O h* 7 - f

2SK2478

Contextual Info: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistor 2SK2478 NチャネルパワーMOS FET スイッチング用 工業用 2SK2478はNチャネル縦型 パワー MOS FETで，スイッチング特性が優れており，各種スイッチング電源用途に最適

2SK2141

Abstract: IEA-695 TEA-572
Contextual Info: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistor 2SK2141 Nチャネル パワー MOS FET スイッチング用 工業用 2SK2141はNチャネル縦型 パワー MOS FETで，スイッチング特性が優れており，各種アクチュエータ駆動用途やス

7824 3A

Abstract: 2SK2480 voltage 10v vdss 150v Id 50A mos fet
Contextual Info: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistor 2SK2480 NチャネルパワーMOS FET スイッチング用 工業用 2SK2480はNチャネル縦型 パワー MOS FETで，スイッチング特性が優れており，各種スイッチング電源用途に最適

Contextual Info: OMNI8C RLU Remote Logic Annunciator Model C1180B and C1181B 8 Point Remote Annunciator Logic Modules. DATASHEET Features • • • • • • • • • • • Provides reliable alarm functions for critical alarms Small , compact, surface mounted and easy to use

C1182

Abstract: annunciator relay
Contextual Info: OMNI16C RLU Remote Logic Annunciator Model C1182, C1478B and C1479B 16 Point Remote Annunciator Logic Modules. DATASHEET Features • • • • Provides reliable alarm functions for critical alarms Small , compact, surface mounted and easy to use 16 Potential Free Contact Inputs

TRANSISTOR D2102

Abstract: L3003 TRANSISTOR ETP35KAN619U L3005 TRANSISTOR 1SR124-4AT82 transistor D454 D362 TRANSISTOR l3007 ma29ta5 TELEVISION EHT TRANSFORMERS
Contextual Info: TX-28/25/21MD4 Service Manual Safety Specifications Service Support Block Diagrams Parts List Service Information Adjustments Self Check Schematic Diagrams Service Hints Mechanical View Waveforms Supplementary Information This interface provides a link between the TV and

1-450-358-11

Abstract: SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE
Contextual Info: TA-VE150 SERVICE MANUAL AEP Model UK Model This amplifier has the Dolby Surround system. Manufactured under license from Dolby Laboratories Licensing Corporation. “Dolby”, the double-D symbol a and “Pro Logic” are trademarks of Dolby Laboratories Licensing Corporation.

JST SOT-23

Abstract: smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72
Contextual Info: BOM STEVAL-ISS001V1 PART TYPE 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM PACK. 0805 3 RESISTOR SMD 2K2 1% 0.125W 100PPM PACK. 0805 4 RESISTOR SMD 3K3 1% 0.125W 100PPM PACK. 0805 5 RESISTOR SMD 4K7 1% 0.125W 100PPM PACK. 0805 6 RESISTOR SMD 10K 1% 0.125W 100PPM PACK. 0805

SMD TRANSISTOR L6

Abstract: transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor
Contextual Info: BOM STEVAL-ISS001V2 PART TYPE QUANT ITY QTY DESIGNATOR D3, D4, D5, D6, D7, D8, D9, D10, D11, D12, D13, D14, D15, D16, D17, D18, D19, D20, 22 QTY D21, D22, D23, D24 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM OBUD. 0805 5 QTY R26, R37, R38, R154, R155

a4w SD transistor

Abstract: transistor PNP C124 diode a4W a4w transistor H7CX-AUD1 transistor NPN c115 omron h7cx C-107 C-118 H7CX-A114D1
Contextual Info: Multifunction Preset Counter H7CX Counters • Highly visible display with backlit negative transmissive LCD. • Programmable PV color to visually alert when output status changes screw terminal block models . • Intuitive setting enabled using ergonomic up/down digit keys (4digit models) and DIP switch.

bd7995

Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
Contextual Info: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND

CA6V

Abstract: audio taper potentiometer 100k cts capacitor 470uf 25v 470uF/ 25V capacitor 10K CA6V CR0805-10W-1001FT C144 DIGITAL NPN TRANSISTOR AKM4114 transistor SOT23 PJ6 AFM2
Contextual Info: Freescale Semiconductor Users Guide DSPAUDIOEVM Users Guide This document contains information on a new product. Specifications and information herein are subject to change without notice. Freescale Semiconductor, Inc., 2004. All rights reserved. DSPAUDIOEVMUG