TRANSISTOR C1 162 Search Results

transistor 8026

Abstract: 2SC5245 FH105
Contextual Info: Ordering number:ENN6219 NPN Epitaxial Planar Silicon Composite Transistor FH105 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2160 [FH105] 0.25 6 5 4 E2 1 2 0.65 2.0 Tr2 C1 B2 1 : Collector1 2 : Base2 3 : Collector2

2SC5245

Abstract: FH105 IT00323 transistor 8026
Contextual Info: Ordering number:ENN6219 NPN Epitaxial Planar Silicon Composite Transistor FH105 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2160 [FH105] 0.25 6 5 4 E2 1 2 0.65 2.0 Tr2 C1 B2 1 : Collector1 2 : Base2 3 : Collector2

transistor Bf 966

Abstract: kf 982 AN1026 S21E UPA895TD UPA895TD-T3 2412 NEC
Contextual Info: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: Units in mm Package Outline TD (TOP VIEW) 1.2 mm x 0.8 mm • UPA895TD 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: C1 6 B1

Hitachi DSA002715

Contextual Info: HA1127, HA1127P, HA1127FP 5 Transistor Arrays Ordering Information Application Type No. Package Commercial use HA1127 DP-14 Industrial use HA1127P DP-14 HA1127FP FP-14DA Pin Arrangement C1 1 14 C5 B1 2 13 E5 substrate E1 3 12 B5 B2 4 11 C4 C2 5 10 E4 B2

HA1127

Abstract: Hitachi DSA0076 HA1127P DP-14 FP-14DA HA1127FP
Contextual Info: HA1127/P/FP 5 Transistor Arrays ADE-204-062 Z Rev. 0 Dec. 2000 Ordering Information Application Type No. Package Commercial use HA1127 DP-14 Industrial use HA1127P DP-14 HA1127FP FP-14DA Pin Arrangement C1 1 14 C5 B1 2 13 E5 (substrate) E1 3 12 B5 B2 4 11

lc 945 p transistor

Abstract: AT-00511 transistor LC 945 T773 lc 945 transistor
Contextual Info: HEW LETT-PACKARD/ CMPNTS b lE » • W fâ« HEW LETT mLfim PACKARD 4447-504 Features • • • • • • SSQ H H P A □ □ □ C1 77 E AT-00511 Surface Mount General Purpose Silicon Bipolar Transistor SOT-143 Plastic Package 11 dB Typical P|dB at 2.0 GHz

RA33H1516M1

Abstract: RA33H1516M1-101 VDD1015
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to

ra33h1516m1

Abstract: RA33H1516M1-101 RF MODULE CIRCUIT DIAGRAM trichloroethylene
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to

ra33h1516m1

Abstract: RF power amplifier 10mW RF MOSFET MODULE RF MODULE CIRCUIT DIAGRAM for channel 4 MOSFET Amplifier Module v 33w marking transistor RF
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to

ATC100B

Abstract: TRANSISTOR Z4 MAPLST1617-030CF
Contextual Info: RF Power Field Effect Transistor LDMOS, 1600 — 1700 MHz, 30W, 28V 5/5/05 MAPLST1617-030CF Preliminary Features Package Style Designed for INMARSAT applications in the 1620-1670 MHz frequency band. Typical Two Tone Performance IMD=-30 dBc : Average Output Power: 15W

RA35H1516M

Abstract: RA35H1516M-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to

RF MOSFET MODULE

Abstract: RA35H1516M RA35H1516M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to

RA35H1516M

Abstract: RA35H1516M-01 RA35H1516M-E01 162MHz
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M 154-162MHz 40W 12.5V MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to

PCF7931AS

Abstract: PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
Contextual Info: Philips Semiconductors Product Discontinuations Notice DN44 December 31, 2000 SEE DN44 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

RA35H1516M

Abstract: RA35H1516M-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to

RA35H1516M-101

Abstract: RA35H1516M 40Wat amp circuit diagrams 400w RF amplifier 400W
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to

Contextual Info: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 162MHz range. The battery can be connected directly to the drain of the

Contextual Info: <Silicon RF Power Modules > RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the

RF power amplifier 10mW

Abstract: RA33H1516M1 473 marking code transistor
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to

Contextual Info: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 162MHz range. The battery can be connected directly to the drain of the

amp circuit diagrams 400w

Contextual Info: <Silicon RF Power Modules > RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the

PCF7952

Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
Contextual Info: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.

2SC1624

Abstract: 2sc1625 2SA814 3c46 2SA815 AC75
Contextual Info: 2 s c 1624 2 s c 1625 O 660 SI ^ K SILICON NPN EPITAXIAL BASE M ESA Unit TRANSISTOR in m m 2s c 1624 2s c 1625 ELECTRICAL CHARACTERISTICS CHARACTERISTIC 3 \y » ^ 5 * * * 3 » SYMBOL I CBO Vq b ^ 5 0 7 * L + m *EBO V EB= n m • X. i y f •'î-xflflfcttSŒ

BPT23C02

Abstract: transistor 200 watt 28 v 0-30 mhz 30GHz transistor
Contextual Info: BIPOLARICS, INC. Part Number BPT23C02 SILICON MICROWAVE POWER OSCILLAOR TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Collector Configuration DESCRIPTION AND APPLICATIONS: Bipolarics' BPT23C02 is a high performance silicon bipolar transistor intended for use in