TRANSISTOR C-114 E Search Results

DTC114TS

Contextual Info: V~P>V DTC114TU/DTC114TK/DTC114TS/DTC114TF DTC114TL/DTC114TA/DTC114TV / T ransistors D TC 114 T U /D T C 114 T K /D T C 114TS DTC114T F /D T C 114T L /D T C 114TA D TC 114TV h 7 > y ^ ^ ‘i "J •^■/Transistor Switch Digital Transistors Includes Resistors

Contextual Info: KSR2114 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In S O T-23 • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R i =4.7K£1, R2=47K£1) • C om plem ent to K S R 1 114

UZJ3335

Abstract: UZJ334 UZJ845 UZJ323 UZJ316 UZJ3245 UZJ313 transistor case To 106 UZJ3325 UZJ311
Contextual Info: UZJ3 series 0.6.8 16:42 Page 23 UZJ3 Series U-SHAPED TYPE MICRO-PHOTOSENSORS INDUSTRY’S SMALLEST SIZE ENABLES SPACE SAVING AND QUICK INSTALLATION! Quick Fitting Hook-up Connector Easy to maintain connector type models are available. Its exclusive connector is the industry’s first

Contextual Info: Transistors Digital transistors built-in resistors D T C 114 E E / D T C 114 E U A / D T C 1 14 E K A D T C 114 E C A / D T C 114 E S A •F e a tu re s 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input

TO63 package

Abstract: TRANSISTOR C 2570 TO114 package 2n3150 2N3265 transistor 2n4866 2N5251 2N5539 2N6048 2N5927 JAN
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE NPN TO-63 La Ì DEVICE TYPE d i A T * Tc = 100°C 1*FE@ Ic/ VcE min/max @ A/V VcE(sat) @ Ic^Ib (V @ A/A) p“ d* fr WATTS (MHz) 2N3265 90 20 25-55@15/2 1@20/2 100 20 2N3266 60 20 20-80@ 15/3

TO63 package

Abstract: 2N5250 2N3265 transistor 114 2N5539 2N3150 2N3266 2N3847 2N4002 2N4003
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 1*FE@ Ic/ V ce (min/max @ A/V) VcE(sat) @ I c/I b (V @ A/A) p“ d * WATTS Ìt (MHz) NPN TO-63 2N3265 90 20 25-55@15/2 l@20/2 100 20 2N3266 60 20 20-80@15/3

4 Pin SMD Hall sensors

Abstract: Hall-Effect-Sensor 115C SMD Hall sensors code C smd hall sensor SMD Hall sensors 3 pin SMD hall sensor SMD Hall C 115c hall 4 lead SMD Hall sensors 4 pin hall sensor
Contextual Info: MICRONAS Edition Dec. 20, 1999 6251-456-2DS HAL114, HAL115 Hall Effect Sensor Family MICRONAS HAL11x Contents Page Section Title 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range

Contextual Info: ADVANCE INFORMATION HAL114 Hall Effect Sensor IC MICRONAS Edition May 5, 1997 6251-456-1AI HAL114 Hall Effect Sensor IC in CMOS technology Features: ADVANCE INFORMATION Marking Code Type Temperature Range A E C 114A 114E 114C – operates from 4.5 V to 24 V supply voltage

Contextual Info: MICRONAS Edition Dec. 20, 1999 6251-456-2DS HAL114, HAL115 Hall Effect Sensor Family MICRONAS HAL11x Contents Page Section Title 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 N ceo Ic PACKAGE DEVICE sus (max) TYPE VOLTS AMPS hFE@ L / ^CE (min/max @ A/V) ^CE(sat) @ I c^ b (V @ A/A) * D* fT p WATTS (MHz) N PN 2N 3265 90 20 25-55@ 15/2 1@ 20/2 100 20 TO -63 2N 3266 60 20 20-80@ 15/3

P4M transistor

Abstract: AS-016 AS016 DTA114EU
Contextual Info: Transistors Digital transistors built-in resistors D T A 114 E E /D T A 114 E U A /D T A 114 E K A /D T A 114 E S A •F ea tures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).

H7CR-BW-500

Abstract: H7CR-8 H7CR-B manual Omron H7CR H7CR-114 H7CR-BWVG H7CR OMRON DIGITAL COUNTER H7CR manual omron h7crbwvg 500 H7CR-CW DIGITAL COUNTER
Contextual Info: Digital Counter H7CR DIN 48 x 48 mm Counters with Easy-to-use Functions Designed with an emphasis on ease of operation. All models except -A, and -SA type equipped with prescale function which displays in units of actual physical parameters (length, volume, etc.).

TRANSISTOR SE 135

Contextual Info: AVANTEK INC 5DE D • 0A V A N T E K OODfc^SO □ AT-01610 Up to 4 GHz General PurposeSilicon Bipolar Transistor Avantek 100 mil Package Features • 22.0 dBm typical Pi dB at 2.0 GHz • 9.5 d B typical G i dB at 2.0 G Hz • High Galn-Bandw idth Product: 7.0 GHz typical fr

transistor t114

Abstract: transistor 13002 to-92
Contextual Info: LESHAN RADIO COMPANY, LTD. LR257 AC/DC Current Mode PWM power management controller The LR257 AC—DC is a high efficiency current-mode PWM power supply controller。 It drives an external NPN transistor for high voltage switching. Apply with BiCMOS technology, the

Contextual Info: //outran_raoMtgr Devices, Inc. AMP. CROSS REFERENCE— PEAK CURRENT TO CHIP N P N PLANAR POW ER TRANSISTOR CHIP NUMBER DESCRIPTION PAGE No. 0 .1 A . 2.0A. 2.0 A. 3.0A. 4 .5 A .

AT41500

Abstract: AT-41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586
Contextual Info: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be

PHB44N06T

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device

PHP44N06T

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance

itt ol 170

Contextual Info: HAL114 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Features: A - operates from 4.5 V to 24 V supply voltage HAL114S HAL114UA - overvoltage and reverse-voltage protection 114A 114E 114C - short-circuit protected open-drain output switch

2n2222 national semiconductor

Abstract: national 2n2222 2n2222 npn transistor 2N2222 NPN Transistor features 2N2222 transistor Remote Controlled Fan Regulator application 2n2222 2N2222 circuit Datasheet 2N2222 transistor temperature controlled fan regulator
Contextual Info: 204014_App.Brief#114.qxd 5/15/02 9:22 AM Page 1 Application Brief Autonomous Fan Control For Processor Systems Using The LM85 Application Brief 114 Emmy Denton A system error can be determined by polling the LM85’s status registers. The LM85 includes high and low-limit

Contextual Info: b b S B ' m DD14TS7 3 D E V E L O P M E N T DATA This data sheet contains advance Information and specifications are subject to change without notice. LTE21009R LTE21015R 11' N ANER PHILIPS/DISCRETE ObE D M ICROW AVE LINEAR POW ER TRA N SISTO R N-P-N silicon transistor for use in common-emitter class-A linear power amplifiers up to 4,2 GHz.

npn pnp transistor bipolar cross reference

Abstract: PN diode pnp low power fast switching transistor high voltage fast switching npn transistor npn, transistor, sc 109 C Field Effect Transistor pnp pn junction diode Solitron Devices pnp, 200 V, 20A
Contextual Info: sjfnlitrnn_ a tm , C H IP D E S C R IP T IO N & P E R F O R M A N C E C U R V E S Devices. Inc. Chip Type Index. .l

NTE15012

Abstract: NTE15018 NTE15019 NTE15020 NTE15021
Contextual Info: NTE15012 & NTE15018 thru NTE15021 Integrated Circuit TV Fixed Voltage Regulator Features: D Triple Diffused Darlington Transistor Chips Incorporated D Compact Plastic Package with Indistry Standard Reliability D Output Voltage is Pre−Fixed − No External Adjustment is Required

NTE15019

Abstract: NTE15012 NTE15018 NTE15020 NTE15021
Contextual Info: NTE15012 & NTE15018 thru NTE15021 Integrated Circuit TV Fixed Voltage Regulator Features: D Triple Diffused Darlington Transistor Chips Incorporated D Compact Plastic Package with Indistry Standard Reliability D Output Voltage is Pre–Fixed – No External Adjustment is Required