TRANSISTOR C 144 E P C Search Results

transistor power rating 5w

Abstract: 2SC2118
Contextual Info: 2 s c 2118 CON NPN EPITAXIAL PLANAR TRANSISTOR O 144~ 1 « * æ * * œ Recommended f o r Low V oltage ü ( 1 0~ 1 4V ) . ft x m m INDUSTRIAL APPLICATIONS 1 4 4 ~ 175MHz Band P o w e r A m p l i f i e r A p plica tion s Un i t : mm ¿9.39 MAX ° ttìÎ) 5 W ( M i n •) , i K 't t i m m

Transistor 78 L 05

Contextual Info: P h ilip s Sem ico n d u cto rs b b S B IB l 0031556 036 • APX Product sp ecifica tio n BFQ34 NPN 4 GHz wideband transistor N AUER PHILIPS/DISCRETE fe.'lE » PINNING DESCRIPTION NPN transistor encapsulated in a 4 lead SO T 122A envelope with a ceramic cap. All leads are isolated

Contextual Info: b 2 M clfl2cl GD17121 MITSUBISHI RF POWER MODULE 31R • M57713 144-148MHz, 12.5V, 17W, SSB MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM - —II— PIN : P in @VCC! @VBB ®VCC 2 ©Po ®G N D : : : : : : RF INPUT 1st. DC SUPPLY BASE BIAS SUPPLY

transistor 45 f 122 comparison

Abstract: 48 pin jungle ic TRANSISTOR comparison GUIDE transistor 45 f 122 Single Chip Microcomputers MN1880 MN194 hi-fi amplifier floppy disc driver ic high voltage transistor in color tv or monitor
Contextual Info: Contents Type Number List Application Block Diagrams 21 Video Applications . 23 V C R System. 23

Contextual Info: Philips Semiconductors b b 5 3 c]31 Q0311b7 417 • APX^£liSiJ£U SSSSi£!l NPN 4 GHz wideband transistor £ BFG34 N AflER PHILIPS/DISCRETE DESCRIPTION b^E » PINNING NPN transistor in a four-lead dual-emitter plastic SOU 03 envelope. It is designed for wideband

Contextual Info: HEWLETT-PACKARD/ m C MP N T S blE D • 44475Û4 0 D D cl 7 b ö D2T AT-00500 UP to 4 GHz General Purpose Silicon Bipolar Transistor Chip HEW LETT PACKARD Chip Outline Features • 16.0 dBm typical Pi dB at 2.0 GHz • • • 11.5 dB typical Gi dB at 2.0 GHz

transistor A726

Abstract: A726 TRANSISTOR ARRAY MA3046 A3018 MA3054 817 transistor MA726 a3045 AIA3018
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE 138 75154 140 I39 9665, 9666, 9667, 9668 /^A726 16 IN A I IN b [ IN C [ T? °UT * I^ IN D [ IN E I IN F [ IN G [ GND [ J OUT C OUT D I* > Lw> kx* U j E2 OUT B ^ OUT E j OUT F ^ OUT G COM Miniclip N ot S how n I43

Contextual Info: HEWLETT-PACKARD/ CHPNTS m blE ]> • ll4475fl4 DDDTfib1! 3b5 M H P A HEW LETT A T-6°585 PACKARD U P to 6 G H z L ow N olse Silicon Bipolar Transistor 85 Plastic Package Features • • • • • Low Bias Current Operation Low Noise Figure:1.4 dB typical at 1.0 GHz

2SC2340

Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
Contextual Info: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers

D 1437 transistor

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the

MPC5602S

Abstract: e200z0h sram ecc xPC56XX MPC5604S motherboard service guide wVGA TFT LCD driver nexus 5001 MPC5606S eeprom emulation
Contextual Info: Color Indicator Bar/Volume no. 32-bit Microcontrollers Qorivva MPC560xS Family MCUs for instrument clusters Overview Applications The following development support is The Qorivva MPC560xS family is the latest • Instrument cluster now available: generation of 32-bit microcontrollers MCUs

transistor Common collector configuration

Abstract: PLB16006U
Contextual Info: •7 ^ 3 3 - 0 5 Prelim inary specm caum i Philips Sem iconductors NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL PLB16006U 7 1 1 0 Ö P L O D M b M O b TDfl H I P H I N 5bE T> FEATURES DESCRIPTION APPLICATIONS • Input matching cell allows an

75150

Abstract: MA3019 A726 darlington pair transistor 147 B transistor MA3046 Transistor Array a3045 MA739 50 5G
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE 147 MA3019 146 mA3039 l+ p l r t [*i t 1 9 11 12 10 *• 9 SUBSTRATE 148 150 MA1489, mA1489A 149 MA1488 mA739 VCC+ [14 IN A £ 3 VCC ^ IN D 13 RESPONSE pCONTROL A IN D1 10 IN C1 ^ IN C OUT B £ 7 GND^ ■^i RESPONSE

Contextual Info: HEWLETT-PACKARD/ CMPNTS blE D • 4 M 4 7 SA 4 0 0 0 ti77b 1Tb ■ H P A AT-00570 Up to 4 GHz General Purpose Silicon Bipolar Transistor W kim H E W LE T T PACKARD 70 mil Package Features • 16.0 dBm typical Pi dB at 2.0 GHz • 11.5 dB typical Gi dB at 2.0 GHz

Contextual Info: ¿57 TYP E STP36N 05L S TP36N05LFI STP36N05L STP36N05LFI S G S -T H O M S O N ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 50 V 50 V < 0.04 a < 0.04 a 36 A 21 A . TYPICAL R DS(on) = 0.033 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

APA075

Abstract: CCGA FBGA-484 datasheet APA1000 APA150 APA300 APA450 APA600 APA750 FG256
Contextual Info: Product Brief TM ProASICPLUS Flash Family FPGAs Features and Benefits • High Capacity High Performance Routing Hierarchy Commercial and Industrial • • • • • • • 75,000 to 1 Million System Gates 27 k to 198 kbits of Two-Port SRAM 66 to 712 User I/Os

Contextual Info: ¿57 TYP E STP36N 05L S TP36N05LFI SGS-THOMSON STP36N06L STP36N06LFI ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A . TYPICAL R DS(on) = 0.033 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

3004x

Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for

B1316

Abstract: DIODE B1316 B-1316 2SB1316F5 PACKAGE MARKING f5 transistor 2SB B131-6 DIODE 2FL 2fl marking diode 2fl marking
Contextual Info: 2SB1316F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1316-A-Q, where ★ is hFE code and □ is lot number • Darlington connection provides high dc current gain (hFE) •

2sk2385

Abstract: PH 36A 2SK238
Contextual Info: TOSHIBA 2SK2385 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2385 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2

Contextual Info: WJ-A41-1 /SMA41-1 • 1 to 4 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ■ » ■ ■ il l AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH HIGH OUTPUT LEVEL: +19.0 dBm TYP. LOW NOISE: 3.5 dB (TYP.) Outline Drawings A41-1 Specifications'* Characteristics 0.200

Contextual Info: A V A N T E K INC 7b GPD-1003/-1063 D Ë ] 114 n fc.b □ □ □ 4 4 2 cl G Thin Film Cascadable Amplifier 5-1000 MHz 7 </-/ 3 - £ / ^ AVANTEK FEATURES • +14.0 dBm Output Power • Low Cost • Small Size p. 403 ELECTRICAL SPECIFICATIONS (Measured in a 50-ohm system @ + 1 5 VDC nominal)

Contextual Info: CMBT8598 CMBT8599 GENERAL PURPOSE TRANSISTOR P -N -P transistor PACKAGE O UTLIN E DETAILS ALL DIM EN SION S IN m m M arking CMBT8598 = 2K CMBT8599 = 2W 3.0 2.8 0.14 0.48 0.38 -*• ^ 0.09 3 Phi configuration 1 = BASE 2 » EMITTER 3 = COLLECTOR 2.6 2.4 J .-0

Contextual Info: WJ-EA54 10 to 250 MHz TO-5 CASCADABLE AMPLIFIER ♦ TWO STAGES: 27 dB GAIN TYP. ♦ LOW VSWR: 1.2:1 (TYP.) ♦ VERY SMALL SIZE: TO-5 PACKAGE. Specifications * Outline Drawings Typical Characteristics Guaranteed 0° to 50°C -54° to +85°C EA54 .360 ± .002