TRANSISTOR BT 370 Search Results

Contextual Info: IRFF9120 Data Sheet Title FF9 0 bt A, 0V, m, an- June 1999 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: N AMER P H I L I P S / D I S CR E T E DhE D m bt,53T31 □015323 7 • RZ1214B125Y r -3 3 - P U L S E D M IC R O W A V E P O W E R T R A N S IS T O R N-P-N silicon microwave power transistor for use in a common-base, class-C wideband amplifier and operating under pulsed conditions in L-band radar applications.

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

bly89a

Abstract: Transistor bly89a
Contextual Info: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every

Contextual Info: D 000 PWR-82331 and PWR-82333 ILC DATA DEVICE ^ CORPORATION _ SMART POWER 3-PHASE MOTOR DRIVES FEATURES DESCRIPTION APPLICATIONS The PWR-82331 and PWR-82333 are 30A 3-phase motor drive hybrids. The PWR-82331 has a 200V rating and uses MOSFETs in the output stage while the

brush dc motor control 200v 20a

Contextual Info: PWR-82340 and PWR-82342 ILC DATA DEVICE CORPORATION_ _ _ SMART POWER H-BRIDGE MOTOR DRIVES FEATURES DESCRIPTION The PWR-82340 and PWR-82342 are 30A H-bridge motor drive hybrids. The PWR-82340 has a 200V rating and uses M O SFETs in the output stage while the

HIR26-21C

Abstract: w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor
Contextual Info: Everlight Electronics was established in 1983 and plays a critical role in the history of Taiwan’s LED industry. It has become the leader in the Taiwan LED packaging industry. Although facing competition from numerous worldwide Optoelectronic suppliers, Everlight

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

KY2 transistor

Abstract: transistor ky2 4w-2w hybrid hitachi slic application note transistor bsh 103 zx 55
Contextual Info: O K I Semiconductor MSA4709A Subscriber Line interface Circuit GENERAL DESCRIPTION The MSA4709A is designed to provide BSH functions and to meet PABX transmission performance requirements. This device can replace the hybrid transformet circuit. FEATURES • B Battery feed , S (Supervision), and H (Hybrid) functions integrated on chip.

IVD12

Abstract: IVD10 4709 bt bt 4709 hitachi slic application note 48V 2w zener diode SCR SN 100
Contextual Info: O K I sem iconductor M SA 4709 / SUBSCRIBER LINE INTERFACE CIRCUIT GENERAL DESCRIPTION The M5A4709 is designed to provide BSH functions and to m eet PA B X transmission perform ance requirements. This device can replace the hybrid transform er circuit. FEATURES

BUZ64

Abstract: transistor buz 350 BUZ 336 siemens 350 98 transistor buz 10 C160
Contextual Info: SIEM EN S SIPMOS Power Transistor BUZ 64 • N channel • Enhancement mode • Avalanche-rated Type Vos BUZ 64 400 V Ia 11.5 A ^DS on 0.4 Í2 Package 1) O rdering Code TO-204 AA C67078-S1017-A2 Maximum Ratings Parameter Symbol Continuous drain current, 7C = 31 “C

0PI2153

Abstract: 0PI2253 OPI2153 OPI2253
Contextual Info: OPTEK TECHNOLOGY INC OhE D | b7TflS00 0000530 a Optoelectronics D ivision TRW Electronic Components Group 1987 Cost Saver Product! Call TRW for more information! I i v j n a a m M M t W W Product Bulletin 5206 January 1985 T - H I-S 3 Optically Coupled Isolators

sc74750

Abstract: MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921
Contextual Info: Discretes For Bipolar Transistors and Discrete MOSFETs please check the Power Management Chapter, pages 189-239. For RF Consumer Products please find following tables in the RF Products Chapter from page 252 onwards: RF PIN diodes RF Bandswitch diodes RF Varicap diodes

IP4223CZ6

Abstract: power one pmp 7.24 IP4058CX8/LF ip4065cx11 IP4056CX8/LF 2 x 40w amplifier DIODE BAT86 replacement BAS85 Spice KEC SOT-23 bav99 IP4059CX5/LF
Contextual Info: NXP has fully embraced ecological and environmental issues, from maintaining certified environmental management systems General Applications selection guide 2008 to communicating our environmental policy to employees and other stakeholders. Extending this ‘profitable green’ ideal to our

Contextual Info: PD -91736 International I R Rectifier IRG4RC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • S ho rt C ircuit Rated U ltraFast: O ptim ize d for high o p era ting fre q u e n cie s >5.0 kHz , and S hort

Contextual Info: t e l x d y n e 2 öe co m po nen ts d • QQDbt,Ci0 T ' » 3$ ,*?• .O .0 T -1 3 -2 S CHQ2222 NPN QUAD AMPLIFIER JAN, JANTX, JANTXV pending General Purpose PACKAGE OUTLINE Four NPN Transistors Similar to 2N3467 TO-116 M19600/569-01 CiC Available in Three Hermetic

PHILIPS BDX65

Abstract: BDX65 PHILIPS BDX64
Contextual Info: N AMER PHILIPS/DISCRETE b b S a ^ l 0011=177 1 • BDX65; 65A BDX65B; 65C ESE D T - 3 3 - 2 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. P-N-P complements are BDX64, BDX64A,

1671B

Abstract: 2N1671 scr firing 2N1671A 160 germanium transistor 2N 1671 1671C Germanium power 2N1671B MT53B256M32D1NP-062 AUT:C
Contextual Info: Germanium Power Devices Corp. SILICON UNIJUNCTION TRANSISTOR The| GPJ3 Unijunction Transistor is a three terminal device having a stable “N ” type negative resistance charac­ teristic over a wide temperature range. A stable peak point voltage, a low peak point

transistor tt 2222

Abstract: D2l10 BLV33F transistor rf vhf G37 IC
Contextual Info: N AHER PHILIPS/DISCRETE bTE D • b b S B 'J a i J □ G 2 Û R ei 7 144 IAPX BLV33F V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear v.h.f. amplifiers fo r television transmitters and transposers.

yx 801 led driver

Abstract: YX 801 led driver 4 pins yx 801 yx 801 led IC yx 801 led driver FP-032 DM 7652 zy 406 transistor TRANSISTOR s170 PH yx 801 ic
Contextual Info: nd .co m Evaluation Only. Created with Aspose.Pdf.Kit. Copyright 2002-2005 Aspose Pty Ltd bt re SPFD54126B w w w .m 528-channel 6-bit Source Driver with System-on-chip for Color Amorphous TFT-LCDs Preliminary NOV. 20, 2006 Version 0.2 ORISE Technology reserves the right to change this documentation without prior notice. Information provided by ORISE Technology is believed to be

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

transistor k702

Abstract: transistor k703 transistor k79 transistor k215 TRANSISTOR K550 K206 transistor Transistor k822 CN701 transistor k620 transistor k230
Contextual Info: ORDER NO. CPD0603076C0 Notebook Computer CF-18 This is the Service Manual for the following areas. Z …for PCPE /CPE Model No. CF-18JHUZBZZ 2006 Matsushita Electric Industrial Co., Ltd. All rights reserved. Unauthorized copying and distribution is a violation of law.

kyl 1020

Abstract: Darlington transister A4709A 1l400 MSA4709ASS MSA4709 darlington tip pnp transister symbol AL24 MSA4709A
Contextual Info: O K I Semiconductor MSA4709A Subscriber Line Interface Circuit G EN ER A L DESCRIPTIO N The MSA4709A is designed to pro v id e BSH functions a n d to m eet PABX transm ission perform ance requirem ents. T his device can replace the h y b rid tran sfo rm et circuit.

Contextual Info: PRELIMINARY AMD£I Am79C873 NetPHY -1 10/100 Mbps Ethernet Physical Layer Single-Chip Transceiver with 100BASE-FX Support DISTINCTIVE CHARACTERISTICS • 100BASE-FX direct interface to industry standard electrical/optical transceivers ■ High performance 100 Mbps clock generator